NXP Semiconductors
Product data sheet
High-speed diodes
FEATURES
•
Hermetically sealed leaded glass
SOD68 (DO-34) package
•
High switching speed: max. 4 ns
•
Continuous reverse voltage:
max. 75 V
•
Repetitive peak reverse voltage:
max. 75 V
•
Repetitive peak forward current:
max. 450 mA.
The diodes are type branded.
1N4531; 1N4532
DESCRIPTION
The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar
technology, and encapsulated in hermetically sealed leaded glass
SOD68 (DO-34) packages.
k
handbook, halfpage
a
MAM156
APPLICATIONS
•
High-speed switching
•
Protection diodes in reed relays.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
V
R
I
F
I
FRM
I
FSM
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 1 ms
t=1s
P
tot
T
stg
T
j
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C
−
−
−
−
−65
−
4
1
0.5
500
+200
200
A
A
A
mW
°C
°C
see Fig.2
CONDITIONS
MIN.
−
−
−
−
MAX.
75
75
200
450
V
V
mA
mA
UNIT
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
1996 Sep 03
2
NXP Semiconductors
Product data sheet
High-speed diodes
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
IN4531
IN4532
C
d
diode capacitance
IN4531
IN4532
t
rr
reverse recovery time
IN4531
IN4532
reverse recovery time
IN4532
V
fr
forward recovery voltage
when switched from I
F
= 10 mA to
I
R
= 60 mA; R
L
= 100
Ω;
measured
at I
R
= 1 mA; see Fig.7
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
Ω;
measured
at I
R
= 1 mA; see Fig.7
when switched from I
F
= 100 mA;
t
r
≤
30 ns; see Fig.8
see Fig.5
V
R
= 20 V
V
R
= 20 V; T
j
= 150
°C
V
R
= 50 V
V
R
= 50 V; T
j
= 150
°C
f = 1 MHz; V
R
= 0; see Fig.6
CONDITIONS
I
F
= 10 mA; see Fig.3
1N4531; 1N4532
MIN.
−
−
−
−
−
−
−
−
−
−
−
MAX.
1 000
25
50
100
100
4
2
4
2
4
3
UNIT
mV
nA
µA
nA
µA
pF
pF
ns
ns
ns
V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a printed circuit-board without metallization pad.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
lead length 5 mm
lead length 5 mm; note 1
VALUE
120
350
UNIT
K/W
K/W
1996 Sep 03
3
NXP Semiconductors
Product data sheet
High-speed diodes
GRAPHICAL DATA
1N4531; 1N4532
handbook, halfpage
300
MBG450
handbook, halfpage
600
MBG458
IF
(mA)
200
IF
(mA)
400
(1)
(2)
(3)
100
200
0
0
100
Tamb ( C)
o
0
200
0
(1) T
j
= 175
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
1
VF (V)
2
Lead length 5 mm.
Fig.2
Maximum permissible continuous forward
current as a function of ambient temperature.
Fig.3
Forward current as a function of forward
voltage.
10
2
handbook, full pagewidth
IFSM
(A)
MBG704
10
1
10
−1
1
10
10
2
10
3
tp (µs)
10
4
Based on square wave currents.
T
j
= 25
°C
prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 03
4
NXP Semiconductors
Product data sheet
High-speed diodes
1N4531; 1N4532
handbook, halfpage
10
3
MGD010
MGD004
IR
(µA)
handbook, halfpage
1.2
10
2
Cd
(pF)
1.0
10
0.8
1
10
−1
0.6
10
−2
0
100
Tj (
o
C)
200
0.4
0
10
VR (V)
20
V
R
= 50 V
Solid line; maximum values.
Dotted line; typical values.
f = 1 MHz; T
j
= 25
°C.
Fig.5
Reverse current as a function of junction
temperature.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 03
5
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