NVTFS5820NL
Power MOSFET
Features
60 V, 11.5 mW, Single N−Channel,
m8FL
•
•
•
•
•
Small Footprint (3.3x3.3 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
AEC−Q101 Qualified
These are Pb−Free Devices*
http://onsemi.com
V
(BR)DSS
60 V
Value
60
"20
29
20
Unit
V
V
A
N−Channel
D
R
DS(on)
MAX
11.5 mW @ 10 V
15 mW @ 4.5 V
I
D
MAX
29 A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent R
YJ−mb
(Notes 1,
2, 3, 4)
Power Dissipation
R
YJ−mb
(Notes 1, 2, 3)
Continuous Drain Cur-
rent R
qJA
(Notes 1 &
3, 4)
Power Dissipation
R
qJA
(Notes 1, 3)
Pulsed Drain Current
T
mb
= 25°C
Steady
State
T
mb
= 100°C
T
mb
= 25°C
T
mb
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
T
A
= 25°C
I
DM
I
DmaxPkg
T
J
, T
stg
I
S
E
AS
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
21
10
11
8.0
3.2
1.6
247
70
−55
to
175
17
48
W
A
G
S
W
1
MARKING DIAGRAM
1
WDFN8
(m8FL)
CASE 511AB
5820
A
Y
WW
G
S
S
S
G
5820
AYWWG
G
D
D
D
D
A
A
°C
A
mJ
Current limited by package
(Note 4)
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L(pk)
= 37 A, L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
NVTFS5820NLTAG
NVTFS5820NLTWG
Package
WDFN8
(Pb−Free)
WDFN8
(Pb−Free)
Shipping
†
1500/Tape &
Reel
5000/Tape &
Reel
THERMAL RESISTANCE MAXIMUM RATINGS
(Note 1)
Parameter
Junction−to−Mounting Board (top)
−
Steady
State (Note 2, 3)
Junction−to−Ambient
−
Steady State (Note 3)
Symbol
R
YJ−mb
R
qJA
Value
7.3
47
Unit
°C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and
soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2011
July, 2011
−
Rev. 1
1
Publication Order Number:
NVTFS5820NL/D
NVTFS5820NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
R
G
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
= 10 A
T
J
= 25°C
T
J
= 125°C
V
GS
= 4.5 V, V
DS
= 48 V,
I
D
= 10 A, R
G
= 2.5
W
V
GS
= 4.5 V, V
DS
= 48 V, I
D
= 10 A
V
GS
= 10 V, V
DS
= 48 V, I
D
= 10 A
V
GS
= 4.5 V, V
DS
= 48 V, I
D
= 10 A
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
10
28
19
22
ns
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 25 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1462
150
96
28
15
1
4
8
3
0.62
V
W
nC
pF
I
D
= 8.7 A
I
D
= 7.3 A
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
60
57
1.0
10
±100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.5
6.2
10.1
13.0
24.6
2.3
V
mV/°C
11.5
15
mW
V
DS
= 5 V, I
D
= 10 A
S
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V,
I
S
= 10 A
0.79
0.65
19
13
6
15
nC
ns
1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
5. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NVTFS5820NL
TYPICAL CHARACTERISTICS
80
70
I
D
, DRAIN CURRENT (A)
60
50
40
30
20
10
0
0
1
2
3
3.4 V
3.2 V
3.0 V
2.8 V
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
10 V
80
4.0 V
3.8 V
3.6 V
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
70
60
50
40
30
20
10
0
1
T
J
= 25°C
T
J
= 125°C
2
3
T
J
=
−55°C
4
5
V
DS
≥
10 V
V
GS
= 5 V
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.030
0.025
0.020
0.015
0.010
0.005
I
D
= 10 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.016
Figure 2. Transfer Characteristics
T
J
= 25°C
0.014
V
GS
= 4.5 V
0.012
V
GS
= 10 V
0.010
2
4
6
8
10
12
0.008
5
10
15
20
25
30
35
40
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
−50
−25
0
25
50
75
100
125
150
175
100
V
GS
= 10 V
I
D
= 10 A
I
DSS
, LEAKAGE (nA)
10,000
100,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1,000
T
J
= 125°C
10
20
30
40
50
60
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
NVTFS5820NL
TYPICAL CHARACTERISTICS
1800
1600
C, CAPACITANCE (pF)
1400
1200
1000
800
600
400
200
0
0
C
oss
C
rss
10
20
30
40
50
60
DRAIN−TO−SOURCE VOLTAGE (V)
C
iss
V
GS
= 0 V
T
J
= 25°C
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
8
6
4
Q
gs
2
0
Q
T
Q
gd
V
DS
= 48 V
I
D
= 10 A
T
J
= 25°C
0
5
10
15
20
25
30
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
40
I
S
, SOURCE CURRENT (A)
1000
V
DD
= 48 V
I
D
= 10 A
V
GS
= 4.5 V
100
t, TIME (ns)
t
f
t
d(on)
t
d(off)
30
V
GS
= 0 V
T
J
= 25°C
t
r
10
20
10
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
V
GS
= 10 V
Single Pulse
T
C
= 25°C
100
ms
1 ms
10 ms
1
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
V
DS
, DRAISN VOLTAGE (V)
60
Figure 10. Diode Forward Voltage vs. Current
I
D
= 37 A
50
40
30
20
10
0
25
I
D
, DRAIN CURRENT (A)
100
10
ms
10
dc
0.1
100
50
75
100
125
150
175
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
4
NVTFS5820NL
TYPICAL CHARACTERISTICS
R
qJ(t)
(°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
10
Duty Cycle = 0.5
0.2
1
0.1
0.05
0.02
0.1
0.01
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
0.01
0.000001
PULSE TIME (sec)
Figure 13. Thermal Response
http://onsemi.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
