PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE687M23
FEATURES
•
NEW MINIATURE M23 PACKAGE:
– World's smallest transistor package footprint —
leads are completely underneath package body
– Low profile/0.55 mm package height
– Ceramic substrate for better RF performance
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 5.5 GHz
LOW NOISE FIGURE:
NF = 1.5 dB at 2 GHz
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M23
0.5
•
•
1
0.25
1.0
0.4
2
3
0.25
DESCRIPTION
0.6
0.15
0.2
0.15
The NE687M23 transistor is designed for low noise, high gain,
and low cost requirements. This high f
T
part is well suited for
very low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/ceramic substrate style "M23" package is ideal for
today's portable wireless applications. The NE687 is also
available in six different low cost plastic surface mount pack-
age styles.
BOTTOM VIEW
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
EIAJ
1
REGISTERED
SYMBOLS
f
T
NF
|S
21E
|
2
h
FE2
I
CBO
I
EBO
C
RE3
PART NUMBER
NUMBER
PACKAGE OUTLINE
UNITS
GHz
dB
dB
70
µA
µA
pF
0.8
MIN
NE687M23
2SC5653
M23
TYP
5.5
1.5
4.5
130
0.1
0.1
MAX
PARAMETERS AND CONDITIONS
Gain Bandwidth at V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
Noise Figure at V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
Forward Current Gain at V
CE
= 2 V, I
C
= 20 mA
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Feedback Capacitance at V
CB
= 0.5 V, I
E
= 0, f = 1 MHz
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
0.55
California Eastern Laboratories
NE687M23
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
°C
°C
RATINGS
5
3
2
30
TBD
150
-65 to +150
60
V
CE
= 1 V
50
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector Current, I
C
(mA)
40
30
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
20
10
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
0
0
0.2
0.4
0.6
0.8
1
Base to Emitter Voltage, V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
IB 40
µA
step
400
µA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1000
V
CE
= 1 V
Collector Current, I
C
(mA)
50
40
DC Current Gain, h
FE
4
30
200
µA
100
20
10
IB = 40
µA
0
0
1
2
3
10
0.01
0.1
1
10
100
Collector to Emitter Voltage, V
CE
(V)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
16
5
Collector Current, I
C
(mA)
NOISE FIGURE/ASSOCIATED GAIN vs.
COLLECTOR CURRENT
20
V
CE
= 1 V
f = 1 GHz
4
16
Gain Bandwidth Product, f
T
(GHz)
V
CE
= 1 V
f = 2 GHz
Noise Figure, NF (dB)
12
3
12
8
2
8
4
NF
1
4
0
1
10
100
0
1
10
100
0
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
•
Headquarters
•
4590 Patrick Henry Drive
•
Santa Clara, CA 95054-1817
•
(408) 988-3500
•
Telex 34-6393
•
FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only)
•
Internet: http://WWW.CEL.COM
02/10/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
Associated Gain, G
A
(dB)
Ga
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