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IDT70V9099L9PF

产品描述Dual-Port SRAM, 128KX8, 20ns, CMOS, PQFP100, TQFP-100
产品类别存储    存储   
文件大小296KB,共17页
制造商IDT (Integrated Device Technology)
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IDT70V9099L9PF概述

Dual-Port SRAM, 128KX8, 20ns, CMOS, PQFP100, TQFP-100

IDT70V9099L9PF规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称IDT (Integrated Device Technology)
零件包装代码QFP
包装说明TQFP-100
针数100
Reach Compliance Codenot_compliant
ECCN代码3A991.B.2.A
最长访问时间20 ns
其他特性FLOW-THROUGH OR PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)66 MHz
I/O 类型COMMON
JESD-30 代码S-PQFP-G100
JESD-609代码e0
长度14 mm
内存密度1048576 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度8
湿度敏感等级3
功能数量1
端口数量2
端子数量100
字数131072 words
字数代码128000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织128KX8
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LFQFP
封装等效代码QFP100,.63SQ,20
封装形状SQUARE
封装形式FLATPACK, LOW PROFILE, FINE PITCH
并行/串行PARALLEL
峰值回流温度(摄氏度)240
电源3.3 V
认证状态Not Qualified
座面最大高度1.6 mm
最大待机电流0.002 A
最小待机电流3 V
最大压摆率0.23 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn85Pb15)
端子形式GULL WING
端子节距0.5 mm
端子位置QUAD
处于峰值回流温度下的最长时间20
宽度14 mm

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HIGH-SPEED 3.3V
128K x9/x8
SYNCHRONOUS PIPELINED
DUAL-PORT STATIC RAM
Features:
IDT70V9199/099L
True Dual-Ported memory cells which allow simultaneous
access of the same memory location
High-speed clock to data access
– Commercial: 6/7.5/9/12ns (max.)
– Industrial: 9ns (max.)
Low-power operation
– IDT70V9199/099L
Active: 500mW (typ.)
Standby: 1.5mW (typ.)
Flow-Through or Pipelined output mode on either port via
the
FT/PIPE
pins
Dual chip enables allow for depth expansion without
additional logic
Counter enable and reset features
Full synchronous operation on both ports
– 3.5ns setup to clock and 0ns hold on all control, data, and
address inputs
– Data input, address, and control registers
– Fast 6.5ns clock to data out in the Pipelined output mode
– Self-timed write allows fast cycle time
– 10ns cycle time, 100MHz operation in Pipelined output mode
LVTTL- compatible, single 3.3V (±0.3V) power supply
Industrial temperature range (–40°C to +85°C) is
available for selected speeds
Available in a 100-pin Thin Quad Flatpack (TQFP)
Functional Block Diagram
R/W
L
OE
L
CE
0L
CE
1L
R/W
R
OE
R
CE
0R
CE
1R
1
0
0/1
1
0
0/1
FT/PIPE
L
0/1
1
0
0
1
0/1
FT/PIPE
R
.
I/O
0L
- I/O
8L(1)
I/O
0R
- I/O
8R(1)
I/O
Control
I/O
Control
A
16L
A
0L
CLK
L
ADS
L
CNTEN
L
CNTRST
L
NOTE:
1. I/O
0X
- I/O
7X
for IDT70V9099.
A
16R
Counter/
Address
Reg.
MEMORY
ARRAY
Counter/
Address
Reg.
A
0R
CLK
R
ADS
R
CNTEN
R
CNTRST
R
4859 drw 01
APRIL 2003
1
©2003 Integrated Device Technology, Inc.
DSC-4859/3

IDT70V9099L9PF相似产品对比

IDT70V9099L9PF IDT70V9099L6PF IDT70V9199L9PFI IDT70V9199L6PF IDT70V9199L12PF IDT70V9199L9PF IDT70V9199L7PF IDT70V9099L12PF
描述 Dual-Port SRAM, 128KX8, 20ns, CMOS, PQFP100, TQFP-100 Dual-Port SRAM, 128KX8, 15ns, CMOS, PQFP100, TQFP-100 Dual-Port SRAM, 128KX9, 20ns, CMOS, PQFP100, TQFP-100 Dual-Port SRAM, 128KX9, 15ns, CMOS, PQFP100, TQFP-100 Dual-Port SRAM, 128KX9, 25ns, CMOS, PQFP100, TQFP-100 Dual-Port SRAM, 128KX9, 20ns, CMOS, PQFP100, TQFP-100 Dual-Port SRAM, 128KX9, 18ns, CMOS, PQFP100, TQFP-100 Dual-Port SRAM, 128KX8, 25ns, CMOS, PQFP100, TQFP-100
是否无铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
零件包装代码 QFP QFP QFP QFP QFP QFP QFP QFP
包装说明 TQFP-100 TQFP-100 TQFP-100 TQFP-100 TQFP-100 TQFP-100 TQFP-100 TQFP-100
针数 100 100 100 100 100 100 100 100
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant _compli
ECCN代码 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
最长访问时间 20 ns 15 ns 20 ns 15 ns 25 ns 20 ns 18 ns 25 ns
其他特性 FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE
最大时钟频率 (fCLK) 66 MHz 100 MHz 66 MHz 100 MHz 50 MHz 66 MHz 83 MHz 50 MHz
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 S-PQFP-G100 S-PQFP-G100 S-PQFP-G100 S-PQFP-G100 S-PQFP-G100 S-PQFP-G100 S-PQFP-G100 S-PQFP-G100
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0
长度 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm
内存密度 1048576 bit 1048576 bit 1179648 bit 1179648 bit 1179648 bit 1179648 bit 1179648 bit 1048576 bi
内存集成电路类型 DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM
内存宽度 8 8 9 9 9 9 9 8
湿度敏感等级 3 3 3 3 3 3 3 3
功能数量 1 1 1 1 1 1 1 1
端口数量 2 2 2 2 2 2 2 2
端子数量 100 100 100 100 100 100 100 100
字数 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words
字数代码 128000 128000 128000 128000 128000 128000 128000 128000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 85 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 128KX8 128KX8 128KX9 128KX9 128KX9 128KX9 128KX9 128KX8
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LFQFP LFQFP LFQFP LFQFP LFQFP LFQFP LFQFP LFQFP
封装等效代码 QFP100,.63SQ,20 QFP100,.63SQ,20 QFP100,.63SQ,20 QFP100,.63SQ,20 QFP100,.63SQ,20 QFP100,.63SQ,20 QFP100,.63SQ,20 QFP100,.63SQ,20
封装形状 SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
封装形式 FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 240 240 240 240 240 240 240 240
电源 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm 1.6 mm
最大待机电流 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A
最小待机电流 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
最大压摆率 0.23 mA 0.28 mA 0.24 mA 0.28 mA 0.2 mA 0.23 mA 0.25 mA 0.2 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15)
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm
端子位置 QUAD QUAD QUAD QUAD QUAD QUAD QUAD QUAD
处于峰值回流温度下的最长时间 20 20 20 20 20 20 20 20
宽度 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm

 
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