ND2406L/2410L, BSS129
N-Channel Depletion-Mode MOSFET Transistors
Product Summary
Part Number
ND2406L
ND2410L
BSS129
230
V
(BR)DSV
Min (V)
240
r
DS(on)
Max (W)
6
10
20
V
GS(off)
(V)
–1.5 to –4.5
–0.5 to –2.5
–0.7 (min)
I
D
(A)
0.23
0.18
0.15
Features
D
D
D
D
D
High Breakdown Voltage: 260 V
Normally “On” Low r
DS
Switch: 3.5
W
Low Input and Output Leakage
Low-Power Drive Requirement
Low Input Capacitance
TO-226AA
(TO-92)
1
Benefits
D
D
D
D
D
Full-Voltage Operation
Low Offset Voltage
Low Error Voltage
Easily Driven Without Buffer
High-Speed Switching
Applications
D
D
D
D
D
Normally “On” Switching Circuits
Current Sources/Limiters
Power Supply, Converter Circuits
Solid-State Relays
Telecom Switches
TO-92-18CD
(TO-18 Lead Form)
1
S
S
G
2
D
2
D
3
Top View
ND2406L
ND2410L
G
3
Top View
BSS129
Absolute Maximum Ratings (T
A
= 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
Pulsed Drain Current
a
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70198.
Applications information may also be obtained via FaxBack, request document #70612.
T
A
=
25_C
T
A
=
100_C
T
A
=
25_C
T
A
=
100_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
ND2406L
240
"30
0.23
0.14
0.9
0.8
0.32
156
ND2410L
240
"30
0.18
0.12
0.9
0.8
0.32
156
–55 to 150
BSS129
230
"20
0.15
Unit
V
A
0.6
1.0
0.4
125
W
_C/W
_C
Siliconix
S-52426—Rev. C, 14-Apr-97
1
ND2406L/2410L, BSS129
Specifications
a
Limits
ND2406L
ND2410L
BSS129
Parameter
Static
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Min
Max
Unit
V
GS
= –9 V, I
D
= 10
mA
Drain-Source
D i S
Breakdown Voltage
g
V
(BR)DSV
V
GS
= –5 V, I
D
= 10
mA
V
GS
= –3 V, I
D
= 250
mA
V
DS
= 5 V, I
D
= 10
mA
Gate-Source
Gate Source Cutoff Voltage
V
GS( ff)
GS(off)
V
DS
= 3 V, I
D
= 1 mA
V
DS
= 0 V, V
GS
=
"20
V
T
J
=
125_C
V
DS
= 180 V, V
GS
= –9 V
T
J
=
125_C
Drain Cutoff Current
I
D( ff)
D(off)
V
DS
= 180 V, V
GS
= –5 V
T
J
=
125_C
V
DS
= 230 V, V
GS
= –3 V
T
J
=
125_C
Drain-Saturation Current
c
I
DSS
V
DS
= 10 V, V
GS
= 0 V
V
GS
= 2 V, I
D
= 30 mA
Drain-Source On Resistance
Drain Source On-Resistance
c
r
DS( )
DS(on)
V
GS
= 0 V, I
D
= 30 mA
T
J
=
125_C
V
GS
= 0 V, I
D
= 14 mA
Forward Transconductance
c
Common Source
Output Conductance
c
g
f
fs
g
os
V
DS
= 25 V, I
D
= 250 mA
V
DS
= 10 V, I
D
= 30 A
260
260
260
240
240
230
–1.5
–4.5
–0.5
–2.5
–0.7
"10
"50
1
200
1
200
0.1
200
mA
"10
"50
"100
nA
V
Gate-Body
Gate Body Leakage
I
GSS
350
3.3
4.5
7.2
4
375
110
70
40
40
mA
6
15
10
25
20
140
W
mS
mS
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
V
DS
= 25 V, V
GS
= –5 V
V
5
f = 1 MHz
70
20
10
120
30
15
120
30
15
pF
Switching
d
Turn-On
Turn On Time
t
d(on)
t
r
Turn-Off Time
t
d(off)
t
f
Notes
a. T
A
= 25_C unless otherwise noted.
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW
v300
ms
duty cycle
v2%.
d. Switching time is essentially independent of operating temperature.
V
DD
=
25
V, R
L
= 830
W
I
D
^
30
mA V
GEN
= -5 V
mA,
R
G
= 25
W
15
75
ns
40
100
VDDV24
2
Siliconix
S-52426—Rev. C, 14-Apr-97
ND2406L/2410L, BSS129
Typical Characteristics (25_C Unless Otherwise Noted)
200
Output Characteristics (ND2406)
200
V
GS
= 2 V
–0.8 V
–1 V
I
D
– Drain Current (mA)
160
Output Characteristics (ND2410)
V
GS
= 2 V
0.2 V
0V
0.4 V
120
–0.4 V
80
–0.6 V
40
–0.8 V
–1 V
0
0.4
0.8
1.2
1.6
2.0
–0.2 V
I
D
– Drain Current (mA)
160
–0.4 V
–0.6 V
120
–1.2 V
80
–1.4 V
–1.6 V
40
–1.8 V
–2 V
0
0
0.4
0.8
1.2
1.6
2
V
DS
– Drain-to-Source Voltage (V)
500
0
V
DS
– Drain-to-Source Voltage (V)
Transfer Characteristics (ND2406)
500
V
DS
= 10 V
T
C
= –55_C
125_C
400
I
D
– Drain Current (mA)
25_C
Transfer Characteristics (ND2410)
V
DS
= 10 V
400
I
D
– Drain Current (mA)
300
300
200
200
25_C
T
C
= 125_C
–55_C
100
100
0
–4.5
–3.5
–2.5
–1.5
–0.5
0.5
0
–4.5
–3.5
–2.5
–1.5
–0.5
0.5
V
GS
– Gate-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
10
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
r
DS(on)
I
DSS
1000
25
On-Resistance vs. DrainCurrent
V
GS
= 0 V
6
600
r
DS(on)
– On-Resistance (
W
)
r
DS(on)
– On-Resistance (
W
)
8
800
20
I
DSS
– Drain Current (mA)
15
ND2410
10
4
400
ND2406
2
r
DS
@ I
D
= 30 mA, V
GS
= 0 V
I
DSS
@ V
DS
= 7.5 V, V
GS
= 0 V
0
–1
–2
–3
–4
–5
–6
V
GS(off)
– Gate-Source Cutoff Voltage (V)
200
5
0
0
10
100
I
D
– Drain Current (mA)
1K
Siliconix
S-52426—Rev. C, 14-Apr-97
3
ND2406L/2410L, BSS129
Typical Characteristics (25_C Unless Otherwise Noted) (Cont’d)
2.25
r
DS(on)
– Drain-Source On-Resistance
(Normalized)
2.00
1.75
1.50
1.25
1.00
0.75
0.50
–50
–10
30
70
110
150
T
J
– Junction Temperature (_C)
Normalized On-Resistance
vs. Junction Temperature
g
fs
– Forward Transconductance (mS)
V
GS
= 0 V
I
D
= 30 mA
350
300
Forward Transconductance vs. Drain Current
25_C
150_C
250
200
150
100
50
0
1
10
–55_C
V
DS
= 10 V
Pulse Test 80
ms,
1% Duty Cycle
100
1K
I
D
– Drain Current (mA)
Capacitance
240
200
C – Capacitance (pF)
160
120
80
40
C
rss
0
0
10
20
30
40
50
V
DS
– Drain-to-Source Voltage (V)
3
1
C
oss
C
iss
V
GS
= –5 V
f = 1 MHz
t – Switching Time (ns)
100
300
Load Condition Effects on Switching
t
f
t
d(off)
t
r
V
DD
= 25 V
V
GS
= 0 to –5 V
R
G
= 25W
t
d(on)
10
10
I
D
– Drain Current (mA)
100
1
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1 0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
0.01
Single Pulse
2. Per Unit Base = R
thJA
= 156
_
C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
0.01
0.1
1
10
100
1K
10 K
t
1
– Square Wave Pulse Duration (sec)
4
Siliconix
S-52426—Rev. C, 14-Apr-97
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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Document Number: 91000
Revision: 08-Apr-05
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