2N3418U4 thru 2N3421U4
NPN MEDIUM POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/393
DESCRIPTION
This family of high-frequency, epitaxial planar transistors feature low saturation voltage. The
U4 package is hermetically sealed and provides a low profile for minimizing board height.
These devices are also available in TO-5 and TO-39 packages. Microsemi also offers
numerous other transistor products to meet higher and lower power ratings with various
switching speed requirements in both through-hole and surface-mount packages.
Important:
For the latest information, visit our website
http://www.microsemi.com.
Available on
commercial
versions
Qualified Levels:
JAN, JANTX and
JANTXV
FEATURES
•
•
•
•
•
JEDEC registered 2N3418U4 through 2N3421U4 series.
RoHS compliant versions available (commercial grade only).
Vce(sat) = 0.25 V @ Ic = 1 A
Rise time t
r
= 0.22 µs max @ I
C
= 1.0 A, I
B1
= 100 mA
Fall time t
f
= 0.20 µs max @ I
C
= 1.0 A, I
B2
= -100 mA
U4 Package
Also available in:
TO-5 package
(leaded)
2N3418 – 2N3421
APPLICATIONS / BENEFITS
•
•
General purpose transistors for medium power applications requiring high frequency switching and
low package profile.
Military and other high-reliability applications.
TO-39 package
(short leaded)
2N3418S – 2N3421S
MAXIMUM RATINGS
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25°C
(2)
@ T
C
= +100°C
(1)
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
J
, T
stg
2N3418U4
2N3420U4
60
85
8
3
5
1
15
2N3419U4
2N3421U4
80
125
Unit
V
V
V
A
W
°C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Operating & Storage Junction Temperature Range
Notes:
-65 to +200
1. Derate linearly 5.72 mW/°C for T
A
> +25 °C.
2. Derate linearly 150 mW/°C for T
C
> +100 °C.
LDS-0192-2, Rev. 1 (111618)
©2011 Microsemi Corporation
Page 1 of 6
2N3418U4 thru 2N3421U4
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: Hermetically sealed, aluminum nitride (AlN) ceramic body with gold over nickel plated kovar lid.
TERMINALS: Gold over nickel plated surface mount terminations
MARKING: Part number, Date Code, Manufacturer’s ID
POLARITY: See package dimensions
TAPE & REEL option: Standard per EIA-481D.
WEIGHT: .125 grams (125 milligrams).
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = commercial
JEDEC type number
(see
Electrical Characteristics
table)
2N3418
U4
(e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Package type
U4 = surface mount
Symbol
C
obo
I
CEO
I
CEX
I
EBO
h
FE
T
A
V
CEO
V
CBO
V
EBO
SYMBOLS & DEFINITIONS
Definition
common-base open-circuit output capacitance
collector cutoff current, base open
collector cutoff current, circuit between base and emitter
emitter cutoff current, collector open
common-emitter static forward current transfer ratio
ambient temperature, free-air temperature
collector-emitter voltage, base open
collector-emitter voltage, emitter open
emitter-base voltage, collector open
LDS-0192-2, Rev. 1 (111618)
©2011 Microsemi Corporation
Page 2 of 6
2N3418U4 thru 2N3421U4
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
OFF CHARACTERISTICS
Parameters / Test Conditions
Collector-Emitter Breakdown Current
I
C
= 50 mA, I
B
= 0
2N3418U4, 2N3420U4
2N3419U4, 2N3421U4
Collector-Emitter Cutoff Current
V
BE
= -0.5 V, V
CE
= 80 V
2N3418U4, 2N3420U4
V
BE
= -0.5 V, V
CE
= 120 V
2N3419U4, 2N3421U4
Collector-Base Cutoff Current
V
CE
= 45 V, I
B
= 0
V
CE
= 60 V, I
B
= 0
Emitter-Base Cutoff Current
V
EB
= 6.0 V, I
C
= 0
V
EB
= 8.0 V, I
C
= 0
ON CHARACTERISTICS
(2)
Parameters / Test Conditions
Forward-Current Transfer Ratio
I
C
= 100 mA, V
CE
= 2.0 V
I
C
= 1.0 A, V
CE
= 2.0 V
I
C
= 2.0 A, V
CE
= 2.0 V
I
C
= 5.0 A, V
CE
= 5.0 V
2N3418U4, 2N3420U4
2N3419U4, 2N3421U4
2N3418U4, 2N3420U4
2N3419U4, 2N3421U4
2N3418U4, 2N3420U4
2N3419U4, 2N3421U4
h
FE
Symbol
Min.
20
40
20
40
15
30
10
15
V
CE(sat)
0.25
0.5
0.6
0.7
1.2
1.4
V
60
120
Max.
Unit
2N3418U4, 2N3420U4
2N3419U4, 2N3421U4
Symbol
V
(BR)CEO
Min.
60
80
0.3
0.3
5.0
5.0
0.5
10
Max.
Unit
V
I
CEX
µA
I
CEO
µA
I
EBO
µA
2N3418U4, 2N3420U4
2N3419U4, 2N3421U4
Collector-Emitter Saturation Voltage
I
C
= 1.0 A, I
B
= 0.1 A
I
C
= 2.0 A, I
B
= 0.2 A
Base-Emitter Saturation Voltage
I
C
= 1.0 A, I
B
= 0.1 A
I
C
= 2.0 A, I
B
= 0.2 A
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio
I
C
= 0.1 A, V
CE
= 10 V, f = 20 MHz
Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
V
BE(sat)
V
Symbol
|h
fe
|
C
obo
Min.
1.3
Max.
0.8
150
Unit
pF
LDS-0192-2, Rev. 1 (111618)
©2011 Microsemi Corporation
Page 3 of 6
2N3418U4 thru 2N3421U4
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted) continued
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Delay Time
V
BE(off)
= -3.7 V,
Rise Time
I
C
= 1.0 A, I
B1
= 100 mA
Storage Time
V
BE(off)
= -3.7 V,
Fall Time
I
C
= 1.0 A, I
B2
= -100 mA
Turn-Off Time
V
BE(off)
= -3.7 V, I
C
= 1.0 A, I
B2
= -100 mA, R
L
= 20 Ω
SAFE OPERATING AREA
DC Test
T
C
= 100 °C, 1 cycle, t = 1.0 s
Test 1
V
CE
= 5.0 V, I
C
= 3.0 A
Test 2
V
CE
= 37 V, I
C
= 0.4 A
Test 3
V
CE
= 60 V, I
C
= 0.185 A
V
CE
= 80 V, I
C
= 0.12 A
Clamped Switching
NOTES:
Symbol
t
d
t
r
t
s
t
f
t
off
Min.
Max.
0.08
0.22
1.10
0.20
1.20
Unit
µs
µs
µs
2N3418U4, 2N3420U4
2N3419U4, 2N3421U4
T
A
= 25°C, I
B
= 0.5 A, I
C
= 3.0 A
(2) Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
LDS-0192-2, Rev. 1 (111618)
©2011 Microsemi Corporation
Page 4 of 6
2N3418U4 thru 2N3421U4
GRAPHS
DC Operation Maximum Rating (W)
T
C
(
C
) (Case)
o
NOTES: Thermal Resistance Junction to Case = 4.5
o
C/W
o
Max Finish-Alloy Temp = 175 C
FIGURE 1
Temperature-Power Derating Curve
THETA (
o
C/W)
TIME (s)
FIGURE 2
Maximum Thermal Impedance
NOTE: T
C
= +25 °C, Thermal Resistance R
θJC
= 4.5 °C/W
LDS-0192-2, Rev. 1 (111618)
©2011 Microsemi Corporation
Page 5 of 6
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