The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 3 October 2002.
INCH-POUND
MIL-PRF-19500/290J
3 July 2002
SUPERSEDING
MIL-PRF-19500/290H
10 July 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N2904,
2N2904A, 2N2904AL, 2N2905, 2N2905A, AND 2N2905AL, JAN, JANTX, JANTXV, JANJ, JANS,
JANTXVM, JANTXVD, JANTXVR, JANTXVH, JANSM, JANSD, JANSR, AND JANSH
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Five
levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provision for
radiation hardness assurance (RHA) to four radiation test levels is provided for JANTXV and JANS product
assurance levels for type 2N2905A. RHA level designators "M", "D", "R", and "H" are appended to the device prefix
to identify devices which have passed RHA requirements.
1.2 Physical dimensions. See figure 1 herein (similar to TO-39).
* 1.3 Maximum ratings.
Types
P
T
= (1)
T
A
=
+25°C
P
T
= (2)
T
C
=
+25°C
V
CBO
V
CEO
V
EBO
I
C
T
STG
and T
J
R
θ
JA
R
θ
JC
W
2N2904, 2N2905
2N2904A,
2N2905A,
2N2904AL,
2N2905AL
0.8
0.8
W
3.0
3.0
V dc
60
60
V dc
40
60
V dc
5
5
mA dc
600
600
°C
-65 to +200
-65 to +200
°C/W
175
175
°C/W
58
58
(1) Derate linearly, 5.7 mW/°C for T
A
> +60°C.
(2) Derate linearly, 17.2 mW/°C for T
C
> +25°C.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC,
P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/290J
* 1.4 Primary electrical characteristics at T
A
= +25°C.
h
FE
at V
CE
= 10 V dc
h
FE1
I
C
= 0.1 mA dc
2N2904
Min
Max
20
h
FE2
I
C
= 1 mA dc
2N2904
25
175
2N2905
50
450
2N2904A
2N2904AL
40
175
2N2905A
2N2905AL
100
450
h
FE3
I
C
= 10 mA dc
h
FE4
(1)
I
C
= 150 mA dc
2N2904
40
120
2N2905
100
300
2N2904A
2N2904AL
40
120
2N2905A
2N2905AL
100
300
h
FE5
(1)
I
C
= 500 mA dc
2N2904
35
2N2904
20
2N2905
Min
Max
35
2N2905
75
2N2905
30
2N2904A
2N2904AL
Min
Max
40
2N2904A
2N2904AL
40
2N2904A
2N2904AL
40
2N2905A
2N2905AL
Min
Max
75
2N2905A
2N2905AL
100
2N2905A
2N2905AL
50
(1) Pulsed (see 4.5.1).
Types
2N2904
2N2904A
2N2904AL
2N2905
2N2905A
2N2905AL
|h
fe
|
f = 100 MHz
V
CE
= 20 V dc
I
C
= 50 mA dc
C
obo
100 kHz
≤
f
≤
1 MHz
V
CB
= 10 V dc
I
E
= 0
Switching
t
on
(see figure
2)
t
off
(see figure
3)
pF
Min
Max
2.0
---
---
8
ns
---
45
ns
---
300
2
MIL-PRF-19500/290J
Dimensions
Symbol
Inches
Min
CD
CH
HD
LC
LD
LL
LU
L
1
L
2
P
Q
TL
TW
r
α
.029
.028
.250
.100
.050
.045
.034
.010
45° TP
0.74
0.71
.305
.240
.335
Max
.335
.260
.370
Millimeters
Min
7.75
6.10
8.51
Max
8.51
6.60
9.40
6
7, 8
7, 8, 12
7, 8
7, 8
7, 8
Notes
.200 TP
.016
.500
.016
.021
.750
.019
.050
5.08 TP
0.41
12.70
.041
0.53
19.05
0.48
1.27
6.35
2.54
1.27
1.14
0.86
0.25
45° TP
5
4
3
10
6
NOTES:
1. Dimension are in inches.
2. Metric equivalents are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007
inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
The device may be measured by direct methods.
7. Dimension LU applies between L
1
and L
2
. Dimension LD applies between L
2
and L minimum. Diameter is
8.
9.
10.
11.
12.
13.
uncontrolled in L
1
and beyond LL minimum.
All three leads.
The collector shall be internally connected to the case.
Dimension r (radius) applies to both inside corners of tab.
In accordance with ANSI Y14.5M, diameters are equivalent to
φx
symbology.
For "L" suffix devices, dimension LL is 1.50 (38.10 mm) minimum, 1.75 (19.05 mm) maximum.
Lead 1 = emitter, lead 2 = base, lead 3 = collector.
* FIGURE 1. Physical dimensions (similar to TO-39).
3
MIL-PRF-19500/290J
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section
does not include documents cited in other sections of this specification or recommended for additional information or
as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned
that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not
they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
MILITARY
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Service (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before
contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be
as specified in MIL-PRF-19500 and on figure 1 herein.
3.4.1 Lead finish. Unless otherwise specified, lead finish shall be solderable in accordance with MIL-PRF-19500,
MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document
(see 6.2).
4
MIL-PRF-19500/290J
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I herein.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I, group A
herein.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
b.
c.
Qualification inspection (see 4.2).
Screening (see 4.3).
Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
* 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case
qualification was awarded to a prior revision of the associated specification that did not request the performance of
table III tests, the tests specified in table III herein shall be performed by the first inspection lot of this revision to
maintain qualification.
* 4.2.2 JANJ devices. For JANJ level, 3.3.1 through 3.3.1.3 of MIL-PRF-19500 shall apply, except as modified herein.
Supplier imposed requirements as well as alternate screens, procedures, and/or process controls shall be documented
in the quality management (QM) plan and must be submitted to the qualifying activity for approval. When alternate
screens, procedures, and/or process controls are used in lieu of the JANJ screens herein, equivalency shall be proven
and documented in the QM plan. Radiation characterization may be submitted in the QM plan at the option of the
manufacturer, however, paragraph 3.3.1.1 of MIL-PRF-19500 is not required. Lot formation and conformance
inspection requirements for JANJ shall be those used for JANTXV devices as a minimum. Die lot controls and rework
requirements shall be in accordance with MIL-PRF-19500 paragraphs 3.13 and D.3.13.2.1.
4.2.2.1 JANJ qualification. For JANJ qualification, 4.4.2.2 herein shall be performed as required by the qualifying
activity.
5
DSP 与 ARM 处理器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
