RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
| 参数名称 | 属性值 |
| 厂商名称 | California Eastern Labs |
| 包装说明 | UNCASED CHIP, R-XUUC-N3 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 20 V |
| 最大漏极电流 (ID) | 0.15 A |
| FET 技术 | METAL SEMICONDUCTOR |
| 最高频带 | KU BAND |
| JESD-30 代码 | R-XUUC-N3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | DEPLETION MODE |
| 封装主体材料 | UNSPECIFIED |
| 封装形状 | RECTANGULAR |
| 封装形式 | UNCASED CHIP |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | NO LEAD |
| 端子位置 | UPPER |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | GALLIUM ARSENIDE |
| NE900000G | NE900200 | NE900200G | NE900089A | NE900075 | NE900275 | NE900175 | NE900100 | NE900100G | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET |
| 厂商名称 | California Eastern Labs | California Eastern Labs | California Eastern Labs | California Eastern Labs | California Eastern Labs | California Eastern Labs | California Eastern Labs | California Eastern Labs | California Eastern Labs |
| 包装说明 | UNCASED CHIP, R-XUUC-N3 | UNCASED CHIP, R-XUUC-N5 | UNCASED CHIP, R-XUUC-N5 | MICROWAVE, S-CQMW-F4 | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT, R-CDFM-F2 | UNCASED CHIP, R-XUUC-N5 | UNCASED CHIP, R-XUUC-N5 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小漏源击穿电压 | 20 V | 20 V | 20 V | 20 V | 20 V | 20 V | 20 V | 20 V | 20 V |
| 最大漏极电流 (ID) | 0.15 A | 0.6 A | 0.6 A | 0.15 A | 0.15 A | 0.6 A | 0.3 A | 0.3 A | 0.3 A |
| FET 技术 | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR |
| 最高频带 | KU BAND | KU BAND | KU BAND | KU BAND | KU BAND | KU BAND | KU BAND | KU BAND | KU BAND |
| JESD-30 代码 | R-XUUC-N3 | R-XUUC-N5 | R-XUUC-N5 | S-CQMW-F4 | R-CDFM-F2 | R-CDFM-F2 | R-CDFM-F2 | R-XUUC-N5 | R-XUUC-N5 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 5 | 5 | 4 | 2 | 2 | 2 | 5 | 5 |
| 工作模式 | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED | UNSPECIFIED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | SQUARE | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | UNCASED CHIP | UNCASED CHIP | UNCASED CHIP | MICROWAVE | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | UNCASED CHIP | UNCASED CHIP |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | FLAT | FLAT | FLAT | FLAT | NO LEAD | NO LEAD |
| 端子位置 | UPPER | UPPER | UPPER | QUAD | DUAL | DUAL | DUAL | UPPER | UPPER |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
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