The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 22 October 2010.
INCH-POUND
MIL-PRF-19500/583B
22 July 2010
SUPERSEDING
MIL-PRF-19500/583A
21 August 1999
*
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON AMPLIFIER,
TYPES 2N5681 AND 2N5682, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN , silicon, amplifier transistor. Three
levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1, (TO-39).
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
Type
PT
TA =
+25°C
(1)
W
PT
TC =
+25°C
(2)
W
10
10
R
θJC
VCBO VCEO
VEBO
IC
IB
Top and TSTG
°C
17.5
17.5
V dc
100
120
V dc
100
120
V dc
4.0
4.0
A dc
1.0
1.0
A dc
0.5
0.5
°C
-65 to +200
2N5681
2N5682
1.0
1.0
(1) Derate linearly 5.7 mW/°C for TA > +25°C.
(2) Derate linearly 57 mW/°C for TC > +25°C.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
https://assist.daps.dla.mil/.
AMSC N/A
FSC 5961
MIL-PRF-19500/583B
1.4 Primary electrical characteristics at T
A
= +25°C.
h
FE
at VCE = 2.0 V dc 1/
/h
fe
/
f = 10 MHz
h
FE1
I
C
= 250 mA
dc
Min
Max
40
150
h
FE2
I
C
= 500 mA
dc
20
h
FE3
I
C
= 1.0 A dc
VCE = 10 V dc
IC = 100 mA dc
3.0
50
0.6
1.1
Limits
C
obo
f = 1.0 MHz
VCE(sat)1 (1) VBE(sat)1 1/
IC = 250 mA IC = 250 mA
dc
dc
VCB = 20 V dc IB = 25 mA dc IB = 25 mA dc
IE = 0
pF
V dc
V dc
5
(1) Pulsed see 4.5.1.
2. APPLICABLE DOCUMENTS
* 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
* DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
* DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
https://assist.daps.dla.mil/quicksearch/
or
https://assist.daps.dla.mil/
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
* 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/583B
FIGURE 1. Physical dimensions for (TO-39).
3
MIL-PRF-19500/583B
Symbol
(see
note 3)
Dimensions
Inches
Min
Max
.335
.260
.370
Millimeters
Min
7.75
6.10
8.51
Max
8.51
6.60
9.39
Notes
CD
CH
HD
LC
LD
LL
LU
L
1
L
2
P
Q
R
TL
TW
α
Term 1
Term 2
Term 3
.305
.240
.335
.200 BSC
.016
.500
.016
.021
.750
.019
.050
.250
.100
.050
.010
.029
.028
.045
.034
5.08 BSC
0.41
12.70
0.41
0.53
19.05
0.48
1.27
6.35
2.54
1.27
0.25
0.74
0.72
1.14
0.86
10
10, 11
11, 12
11, 12
11, 12
11, 12
9
8
13
7
6
10
45° BSC
Emitter
Base
Collector
FIGURE 1. Physical dimensions for (TO-39) continued.
4
MIL-PRF-19500/583B
NOTES:
1. Dimensions are in inches.
*
2. Millimeters are given for general information only.
3. Refer to applicable symbol list.
4. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
5. Lead number 1 is the emitter, lead number 2 is the base, lead number 4 is omitted from this outline. The
collector is number 3 and is electrically connected to the case.
6. Beyond r (radius) max, TW shall be held for a minimum length of .011 inch (0.28 mm).
7. TL measured from maximum HD.
8. Outline in this zone is not controlled.
9. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling
10. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 - 0.00 mm) below seating plane shall be within .007
inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
11. LU applies between L
1
and L
2
. LD applies between L
2
and LL minimum. Diameter is uncontrolled in L
1
and
beyond LL minimum.
12. All three leads.
13 r (radius) applies to both inside corners of tab.
FIGURE 1. Physical dimensions for (TO-39) continued.
5
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