GaAs MMIC
Data Sheet
Ultralinear mixer with integrated IF-amplifier and
LO-Buffer for CDMA receiver applications
• Typical overall performance at cellular frequen-
cies for
P
LO
= – 4 dBm (operation conditions: 3 V,
11 mA;
f
RF
= 881 MHz;
f
LO
= 966 MHz):
Gain 10 dB, Input IP3 9 dBm, Noise figure 8 dB
• RF-frequency range 0.5 - 2.5 GHz
• Operating voltage range: 2.6 to 5 V
• Small SCT-598-8-1 plastic package
ESD: Electrostatic discharge
sensitive device,
observe handling precautions!
•
CMY 212
8
7
6
5
1
2
3
4
VPW05982
Type
CMY 212
Marking
M5s
Ordering Code
(tape and reel)
Q62702-M0026
Package
SCT-598-8-1
Maximum Ratings
Parameter
Port
Symbol
Limit Values
min.
Supply Voltage
DC-Voltage at LO Input
DC-Voltage at Mixer RF-IF Port
Power into Mixer RF Port
Power into LO Input
Channel Temperature
Operating Temperature
Storage Temperature
3, 6
4
1
1
4
–
–
–
max.
5
0.5
+ 0.5
10
10
150
85
150
V
V
V
dBm
dBm
Unit
V
DD
V
6
V
8
P
RF
P
IN, LO
T
Ch
T
OP
T
stg
0
–3
– 0.5
–
– 10
–
– 30
– 55
°
C
°
C
°
C
Data Sheet
1
2001-01-01
GaAs Components
CMY 212
Thermal Resistance
Parameter
Channel to Soldering Point (GND)
Symbol
Values
260
Unit
K/W
R
thChS
CMY 212
Mixer 1
RF IN / IF OUT
GND
2
8 IF AMP
IN
7
GND
Mixer 3
V
DD
Mixer 4
LO IN
6 IF AMP
OUT
5 IF AMP
Source
EHT08993
Figure 1
Block Diagram
Electrical Characteristics - Mixer
Parameter
Comment
Limit Values
min.
RF - Frequency range
LO - Frequency range
IF Frequency range
External match
External match
External match
0.5
0.5
45
typ.
–
–
–
max.
2.5
2.5
250
GHz
GHz
MHz
Unit
Data Sheet
2
2001-01-01
GaAs Components
CMY 212
Typical Performance at Cellular Frequencies*
T
A
= 25
°
C;
V
DD
= 3 V,
f
RF
= 881 MHz;
f
LO
= 966 MHz;
P
LO
= – 4 dBm;
f
IF
= 85 MHz;
Z
S
=
Z
L
= 50
Ω
; unless otherwise specified
Parameter
Symbol
Limit Values
min.
Total operating Current
(Mixer + IF amplifier)
Conversion Gain
SSB Noise Figure
RF Input -/ IF output return loss
(external matching required)
3
rd
Order Input Intercept Point
typ.
11
10
8
10
10
max.
–
–
–
–
–
mA
dB
dB
dB
dBm
Unit
I
OP
G
C
F
SSB
RFIrl/IFOrl
–
–
–
–
–
IIP3
*Important
Note:
During production, the RF performance at PCS frequencies is screened. The passed
devices also achieve the specified RF performance at cellular frequencies.
Test Conditions at PCS Frequencies
T
A
= 25
°
C;
V
DD
= 3 V,
f
RF
= 1960 MHz;
f
LO
= 1750 MHz;
P
LO
= – 4 dBm;
f
IF
= 210 MHz;
Z
S
=
Z
L
= 50
Ω
; unless otherwise specified
Parameter
Symbol
Limit Values
min.
Total operating Current
(Mixer + IF amplifier)
Conversion Gain
SSB Noise Figure
RF Input -/ IF output return loss
(external matching required)
3
rd
Order Input Intercept Point
typ.
12
9.5
8.5
10
11.5
max.
14
–
–
–
–
mA
dB
dB
dB
dBm
Unit
I
OP
G
C
F
SSB
RFIrl/IFOrl
–
8.5
–
–
10
IIP3
Data Sheet
3
2001-01-01
GaAs Components
CMY 212
Typical Device Behavior at Cellular
Frequencies
T
A
= 25
°
C;
V
DD
= 3 V,
f
RF
= 881 MHz;
f
LO
= 966 MHz;
f
IF
= 85 MHz;
Z
S
=
Z
L
= 50
Ω
; unless otherwise specified
26
mA
24
EHT09225
Typical Device Behavior at PCS
Frequencies
T
A
= 25
°
C;
V
DD
= 3 V,
f
RF
= 1960 MHz;
f
LO
= 1750 MHz;
f
IF
= 210 MHz;
Z
S
=
Z
L
= 50
Ω
; unless otherwise specified
26
mA
24
22
Operating Current
EHT09226
14
dB, dBm
14
dB, dBm
IIP3
I
22
OP
Operating Current
Gain, IIP3
20
Gain
18
10
16
IIP3
14
8
12
10
6
8
-12
-10
-8
-6
LO Power
-4
dBm 0
20
18
16
14
I
OP
Gain
10
8
12
10
6
8
-12
-10
-8
-6
LO Power
-4
dBm 0
Data Sheet
4
2001-01-01
Gain, IIP3
12
12
GaAs Components
CMY 212
C
Ext2
L
Ext2
C
Ext1
RF
Input
L
Ext1
RF Input 1
Mixer
2
IF
Buffer
8 IF Input
+3 V
C
Ext6
7
C
Ext5
+3 V
L
Ext3
L
Ext5
GND
C
Ext4
LO
Input
V
D
3
6 IF Output
C
Ext3
IF
Output
L
Ext4
C
Ext7
LO Input 4
5
C
Ext5
V
S Cap
GND
EHT09227
Figure 2
Test Circuit
External Components for Cellular Frequencies
f
RF
= 875 MHz;
f
LO
= 960 MHz;
f
IF
= 85 MHz
Capacitors
(Murata 0402)
2 pF
1 nF
20 pF
100 pF
1 nF
1 nF
3.3 pF
100 nF
Inductors
(Toko)
18 nH LL1005
270 nH LL1608
220 nH LL1608
12 nH LL1005
15 nH LL1005
–
–
22 nH LL1005
C
ext1
C
ext2
C
ext3
C
ext4
C
ext5
C
ext6
C
ext7
C
ext8
L
ext1
L
ext2
L
ext3
L
ext4
L
ext5
–
–
L
ext8
Data Sheet
5
2001-01-01
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