LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC-89 package
which is designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC-89 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
•
We declare that the material of product compliance with
RoHS requirements.
•
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
•
•
•
•
LDTA114EET1G Series
S-LDTA114EET1G Series
SC-89
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R
1
R
2
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Rating
Total Device Dissipation, FR−4 Board
(Note 1) @ T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
Total Device Dissipation, FR−4 Board
(Note 2) @ T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
Junction and Storage Temperature Range
Symbol
P
D
200
1.6
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
400
−55 to
+150
mW
mW/°C
°C/W
°C
600
mW
mW/°C
°C/W
Value
Unit
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0
×
1.0 Inch Pad.
Rev.A 1/12
LESHAN RADIO COMPANY, LTD.
LDTA114EET1G Series;S-LDTA114EET1G Series
ORDERING INFORMATION AND RESISTOR VALUES
Device
LDTA114EET1G
S-LDTA114EET1G
LDTA124EET1G
S-LDTA124EET1G
LDTA144EET1G
S-LDTA144EET1G
LDTA114YET1G
S-LDTA114YET1G
LDTA114TET1G
S-LDTA114TET1G
LDTA143TET1G
S-LDTA143TET1G
LDTA123EET1G
S-LDTA123EET1G
LDTA143EET1G
S-LDTA143EET1G
LDTA143ZET1G
S-LDTA143ZET1G
LDTA124XET1G
S-LDTA124XET1G
LDTA123JET1G
S-LDTA123JET1G
LDTA115EET1G
S-LDTA115EET1G
LDTA144WET1G
S-LDTA144WET1G
Marking
6A
6B
6C
6D
6E
6F
6H
43
6K
6L
6M
6N
6P
R1 (K)
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
R2 (K)
10
22
47
47
∞
∞
2.2
4.7
47
47
47
100
22
Package
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
Shipping
†
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector−Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
LDTA114EET1G
LDTA124EET1G
LDTA144EET1G
LDTA114YET1G
LDTA114TET1G
LDTA143TET1G
LDTA123EET1G
LDTA143EET1G
LDTA143ZET1G
LDTA124XET1G
LDTA123JET1G
LDTA115EET1G
LDTA144WET1G
I
CBO
I
CEO
I
EBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
50
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
100
500
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
−
−
nAdc
nAdc
mAdc
Symbol
Min
Typ
Max
Unit
Collector−Base Breakdown Voltage (I
C
= 10
mA,
I
E
= 0)
Collector−Emitter Breakdown Voltage (Note 3)
(I
C
= 2.0 mA, I
B
= 0)
3. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
Rev.A 2/12
LESHAN RADIO COMPANY, LTD.
LDTA114EET1G Series ;S-LDTA114EET1G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
ON CHARACTERISTICS
(Note 4)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
LDTA114EET1G
LDTA124EET1G
LDTA144EET1G
LDTA114YET1G
LDTA114TET1G
LDTA143TET1G
LDTA123EET1G
LDTA143EET1G
LDTA143ZET1G
LDTA124XET1G
LDTA123JET1G
LDTA115EET1G
LDTA144WET1G
h
FE
35
60
80
80
160
160
8.0
15
80
80
80
80
80
−
60
100
140
140
250
250
15
27
140
130
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
−
Symbol
Min
Typ
Max
Unit
Collector−Emitter Saturation Voltage (I
C
= 10 mA, I
E
= 0.3 mA)
LDTA123EET1G
(I
C
= 10 mA, I
B
= 5 mA)
LDTA114TET1G/LDTA143TET1G
(I
C
= 10 mA, I
B
= 1 mA)
LDTA143ZET1G/LDTA124XET1G
LDTA143EET1G
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
LDTA114EET1G
LDTA124EET1G
LDTA114YET1G
LDTA114TET1G
LDTA143TET1G
LDTA123EET1G
LDTA143EET1G
LDTA143ZET1G
LDTA124XET1G
LDTA123JET1G
LDTA144EET1G
LDTA115EET1G
LDTA144WET1G
V
CE(sat)
Vdc
V
OL
−
−
−
−
−
−
−
−
−
−
−
−
−
V
OH
4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
−
Vdc
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 kW)
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
LDTA114TET1G
LDTA143TET1G
LDTA123EET1G
LDTA143EET1G
LDTA115EET1G
Input Resistor
LDTA114EET1G
LDTA124EET1G
LDTA144EET1G
LDTA114YET1G
LDTA114TET1G
LDTA143TET1G
LDTA123EET1G
LDTA143EET1G
LDTA143ZET1G
LDTA124XET1G
LDTA123JET1G
LDTA115EET1G
LDTA144WET1G
LDTA114EET1G/LDTA124EET1G
LDTA144EET1G/LDTA115EET1G
LDTA114YET1G
LDTA114TET1G/LDTA143TET1G
LDTA123EET1G/LDTA143EET1G
LDTA143ZET1G
LDTA124XET1G
LDTA123JET1G
LDTA144WET1G
4. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
kW
Resistor Ratio
R
1
/R
2
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
−
Rev.A 3/12
LESHAN RADIO COMPANY, LTD.
LDTA114EET1G Series ;S-LDTA114EET1G Series
250
PD , POWER DISSIPATION (MILLIWATTS)
200
150
100
50
0
−50
R
qJA
= 600°C/W
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
1.0
D = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
Figure 2. Normalized Thermal Response
Rev.A 4/12
LESHAN RADIO COMPANY, LTD.
LDTA114EET1G Series ;S-LDTA114EET1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − LDTA114EET1G
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
= 10
1000
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= 10 V
T
A
= −25°C
0.1
75°C
25°C
T
A
= 75°C
100
25°C
−25°C
0.01
0
20
40
I
C
, COLLECTOR CURRENT (mA)
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 3. V
CE(sat)
versus I
C
Figure 4. DC Current Gain
4
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
100
75°C
25°C
T
A
= −25°C
C ob , CAPACITANCE (pF)
3
IC, COLLECTOR CURRENT (mA)
10
1
2
0.1
1
0.01
0.001
0
1
2
V
O
= 5 V
3
4
5
6
7
V
in
, INPUT VOLTAGE (VOLTS)
8
9
10
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 5. Output Capacitance
Figure 6. Output Current versus Input Voltage
100
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
10
T
A
= −25°C
25°C
75°C
1
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 7. Input Voltage versus Output Current
Rev.A 5/12
stm32/stm8
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