LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors
LDTC114EM3T5G Series
With Monolithic Bias Resistor Network
S-LDTC114EM3T5G Series
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-723 package
which is designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-723 Package can be Soldered using Wave or Reflow.
Available in 4 mm, 8000 Unit Tape & Reel
These are Pb-Free Devices.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
3
2
1
SOT-723
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
MARKING
DIAGRAM
3
XX M
1
xx
M
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Junction Temperature
Storage Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
Symbol
P
D
Max
260 (Note 1)
600 (Note 2)
2.0 (Note 1)
4.8 (Note 2)
480 (Note 1)
205 (Note 2)
150
–55 to +150
Unit
mW
mW/°C
°C/W
= Specific Device Code
= Date Code
R
θJA
T
J
T
stg
°C
°C
Rev.O 1/14
LESHAN RADIO COMPANY, LTD.
S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G
Series
DEVICE MARKING AND RESISTOR VALUES
Device
LDTC114EM3T5G
LDTC124EM3T5G
LDTC144EM3T5G
LDTC114YM3T5G
LDTC114TM3T5G
LDTC143TM3T5G
LDTC123EM3T5G
LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
LDTC115EM3T5G
LDTC144WM3T5G
LDTC144TM3T5G
S-LDTC114EM3T5G
S-LDTC124EM3T5G
S-LDTC144EM3T5G
S-LDTC114YM3T5G
S-LDTC114TM3T5G
S-LDTC143TM3T5G
S-LDTC123EM3T5G
S-LDTC143EM3T5G
S-LDTC143ZM3T5G
S-LDTC124XM3T5G
S-LDTC123JM3T5G
S-LDTC115EM3T5G
S-LDTC144WM3T5G
S-LDTC144TM3T5G
Marking
8A
8B
8C
8D
94
8F
8H
8J
8K
8L
8M
8N
8P
8T
R1 (K)
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
47
R2 (K)
10
22
47
47
∞
∞
2.2
4.7
47
47
47
100
22
∞
Package
Shipping
SOT−723
8000/Tape & Reel
Rev.O 2/14
LESHAN RADIO COMPANY, LTD.
S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G
Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector−Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
LDTC114EM3T5G
LDTC124EM3T5G
LDTC144EM3T5G
LDTC114YM3T5G
LDTC114TM3T5G
LDTC143TM3T5G
LDTC123EM3T5G
LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
LDTC115EM3T5G
LDTC144WM3T5G
LDTC144TM3T5G
I
CBO
I
CEO
I
EBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
50
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
100
500
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
0.2
−
−
nAdc
nAdc
mAdc
Collector−Base Breakdown Voltage (I
C
= 10
mA,
I
E
= 0)
Collector−Emitter Breakdown Voltage (Note 3)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
LDTC114EM3T5G
LDTC124EM3T5G
LDTC144EM3T5G
LDTC114YM3T5G
LDTC114TM3T5G
LDTC143TM3T5G
LDTC123EM3T5G
LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
LDTC115EM3T5G
LDTC144WM3T5G
LDTC144TM3T5G
h
FE
35
60
80
80
160
160
8.0
15
80
80
80
80
80
160
−
60
100
140
140
350
350
15
30
200
150
140
150
140
350
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
Vdc
Collector−Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA)
LDTC123EM3T5G
(I
C
= 10 mA, I
B
= 1 mA)
LDTC143TM3T5G/LDTC114TM3T5G/
LDTC143EM3T5G/LDTC143ZM3T5G/
LDTC124XM3T5G/LDTC144TM3T5G
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
LDTC114EM3T5G
LDTC124EM3T5G
LDTC114YM3T5G
LDTC114TM3T5G
LDTC143TM3T5G
LDTC123EM3T5G
LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
LDTC144EM3T5G
LDTC144TM3T5G
LDTC115EM3T5G
LDTC144WM3T5G
V
CE(sat)
V
OL
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 kW)
3. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%.
Rev.O 3/14
LESHAN RADIO COMPANY, LTD.
S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G
Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 4)
Characteristic
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
LDTC143TM3T5G
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
LDTC143ZM3T5G
LDTC114TM3T5G
LDTC144TM3T5G
Input Resistor
LDTC114EM3T5G
LDTC124EM3T5G
LDTC144EM3T5G
LDTC114YM3T5G
LDTC114TM3T5G
LDTC143TM3T5G
LDTC123EM3T5G
LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
LDTC115EM3T5G
LDTC144WM3T5G
LDTC144TM3T5G
Symbol
V
OH
Min
4.9
Typ
−
Max
−
Unit
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
1.54
70
32.9
32.9
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
47
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
−
−
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
61.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
0.5
−
kW
Resistor Ratio
LDTC114EM3T5G/LDTC124EM3T5G/
LDTC144EM3T5G/LDTC115EM3T5G
LDTC114YM3T5G
LDTC143TM3T5G/LDTC114TM3T5G/LDTC144TM3T5G
LDTC123EM3T5G/LDTC143EM3T5G
LDTC143ZM3T5G
LDTC124XM3T5G
LDTC123JM3T5G
LDTC144WM3T5G
Input voltage (V
CC
= 5.0 V, I
O
= 100
m
A)
Input voltage (V
O
= 0.3 V, I
O
= 5 mA)
LDTC123JM3T5G
LDTC123JM3T5G
R
1
/R
2
V
I(off)
V
I(on)
−
1.1
V
V
4. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%.
PD , POWER DISSIPATION (MILLIWATTS)
300
250
200
150
100
50
0
−50
R
qJA
= 480°C/W
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
Rev.O 4/14
LESHAN RADIO COMPANY, LTD.
S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G
Series
TYPICAL ELECTRICAL CHARACTERISTICS − LDTC114EM3T5G
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
= 10
T
A
= −25°C
25°C
0.1
75°C
1000
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= 10 V
T
A
= 75°C
25°C
−25°C
100
0.01
0.001
0
20
40
I
C
, COLLECTOR CURRENT (mA)
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
4
f = 1 MHz
I
E
= 0 V
T
A
= 25°C
100
75°C
IC, COLLECTOR CURRENT (mA)
10
1
0.1
25°C
T
A
= −25°C
Cob , CAPACITANCE (pF)
3
2
1
0.01
V
O
= 5 V
0
1
2
5
6
7
3
4
V
in
, INPUT VOLTAGE (VOLTS)
8
9
10
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
T
A
= −25°C
25°C
75°C
1
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
Rev.O 5/14
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