LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
With Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-723 package
which is designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-723 Package can be Soldered using Wave or Reflow.
Available in 4 mm, 8000 Unit Tape & Reel
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements;AEC-Q101 Qualified and PPAP Capable.
LDTA114EM3T5G Series
S-LDTA114EM3T5GSeries
3
2
1
SOT-723
PIN 1
BASE
(INPUT)
R
1
R
2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
MARKING
DIAGRAM
3
XX M
1
xx
M
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Junction and Storage
Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
Symbol
P
D
Max
260 (Note 1)
600 (Note 2)
2.0 (Note 1)
4.8 (Note 2)
480 (Note 1)
205 (Note 2)
–55 to +150
Unit
mW
mW/°C
°C/W
°C
= Specific Device Code
= Date Code
R
θJA
T
J
, T
stg
Rev.O 1/11
LESHAN RADIO COMPANY, LTD.
LDTA114EM3T5G Series , S- LDTA114EM3T5G Series
ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES
Device
LDTA114EM3T5G
LDTA124EM3T5G
LDTA144EM3T5G
LDTA114YM3T5G
LDTA114TM3T5G
LDTA143TM3T5G
LDTA123EM3T5G
LDTA143EM3T5G
LDTA143ZM3T5G
LDTA124XM3T5G
LDTA123JM3T5G
LDTA115EM3T5G
LDTA144WM3T5G
S-LDTA114EM3T5G
S-LDTA124EM3T5G
S-LDTA144EM3T5G
S-LDTA114YM3T5G
S-LDTA114TM3T5G
S-LDTA143TM3T5G
S-LDTA123EM3T5G
S-LDTA143EM3T5G
S-LDTA143ZM3T5G
S-LDTA124XM3T5G
S-LDTA123JM3T5G
S-LDTA115EM3T5G
S-LDTA144WM3T5G
Marking
6A
6B
6C
6D
6E
6F
6H
6J
6K
6L
6M
6N
6P
R1 (K)
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
R2 (K)
10
22
47
47
∞
∞
2.2
4.7
47
47
47
100
22
Package
Shipping
SOT−723
8000/Tape & Reel
Rev.O 2/11
LESHAN RADIO COMPANY, LTD.
LDTA114EM3T5G Series , S- LDTA114EM3T5G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector−Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
LDTA114EM3T5G
LDTA124EM3T5G
LDTA144EM3T5G
LDTA114YM3T5G
LDTA114TM3T5G
LDTA143TM3T5G
LDTA123EM3T5G
LDTA143EM3T5G
LDTA143ZM3T5G
LDTA124XM3T5G
LDTA123JM3T5G
LDTA115EM3T5G
LDTA144WM3T5G
I
CBO
I
CEO
I
EBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
50
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
100
500
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
−
−
nAdc
nAdc
mAdc
Collector−Base Breakdown Voltage (I
C
= 10
mA,
I
E
= 0)
Collector−Emitter Breakdown Voltage (Note 3.)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
ON CHARACTERISTICS
(Note 3.)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
LDTA114EM3T5G
LDTA124EM3T5G
LDTA144EM3T5G
LDTA114YM3T5G
LDTA114TM3T5G
LDTA143TM3T5G
LDTA123EM3T5G
LDTA143EM3T5G
LDTA143ZM3T5G
LDTA124XM3T5G
LDTA123JM3T5G
LDTA115EM3T5G
LDTA144WM3T5G
h
FE
35
60
80
80
160
160
8.0
15
80
80
80
80
80
−
60
100
140
140
250
250
15
27
140
130
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
Vdc
Collector−Emitter Saturation Voltage (I
C
= 10 mA, I
E
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) LDTA123EM3T5G
(I
C
= 10 mA, I
B
= 1 mA) LDTA114TM3T5G/LDTA143TM3T5G/
LDTA143ZM3T5G/LDTA124XM3T5G/LDTA143EM3T5G
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
LDTA114EM3T5G
LDTA124EM3T5G
LDTA114YM3T5G
LDTA114TM3T5G
LDTA143TM3T5G
LDTA123EM3T5G
LDTA143EM3T5G
LDTA143ZM3T5G
LDTA124XM3T5G
LDTA123JM3T5G
LDTA144EM3T5G
LDTA115EM3T5G
LDTA144WM3T5G
V
CE(sat)
V
OL
−
−
−
−
−
−
−
−
−
−
−
−
−
V
OH
4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
−
Vdc
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 kW)
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
LDTA114TM3T5G
LDTA143TM3T5G
LDTA123EM3T5G
LDTA143EM3T5G
3. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%
Vdc
Rev.O 3/11
LESHAN RADIO COMPANY, LTD.
LDTA114EM3T5G Series , S- LDTA114EM3T5G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Input Resistor
LDTA114EM3T5G
LDTA124EM3T5G
LDTA144EM3T5G
LDTA114YM3T5G
LDTA114TM3T5G
LDTA143TM3T5G
LDTA123EM3T5G
LDTA143EM3T5G
LDTA143ZM3T5G
LDTA124XM3T5G
LDTA123JM3T5G
LDTA115EM3T5G
LDTA144WM3T5G
Symbol
R1
Min
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
1.54
70
32.9
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
Typ
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
Max
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
Unit
kW
Resistor Ratio LDTA114EM3T5G/LDTA124EM3T5G/LDTA144EM3T5G
/
LDTA115EM3T5G
LDTA114YM3T5G
LDTA114TM3T5G/LDTA143TM3T5G/LDTA143EM3T5G
LDTA123EM3T5G
LDTA143ZM3T5G
LDTA124XM3T5G
LDTA123JM3T5G
LDTA144WM3T5G
300
250
200
150
100
50
0
−50
R
qJA
= 480°C/W
R
1
/R
2
PD , POWER DISSIPATION (MILLIWATTS)
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
Rev.O 4/11
LESHAN RADIO COMPANY, LTD.
LDTA114EM3T5G Series , S- LDTA114EM3T5G Series
TYPICAL ELECTRICAL CHARACTERISTICS − LDTA114EM3T5G
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
= 10
1000
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= 10 V
T
A
= −25°C
0.1
75°C
25°C
T
A
= 75°C
100
25°C
−25°C
0.01
0
20
I
C
, COLLECTOR CURRENT (mA)
40
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
4
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
100
75°C
25°C
T
A
= −25°C
Cob , CAPACITANCE (pF)
3
IC, COLLECTOR CURRENT (mA)
10
1
2
0.1
1
0.01
0.001
0
1
2
V
O
= 5 V
3
4
5
6
7
V
in
, INPUT VOLTAGE (VOLTS)
8
9
10
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
100
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
10
T
A
= −25°C
25°C
75°C
1
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
Rev.O 5/11
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