MIC4426/7/8
Dual 1.5A-Peak Low-Side MOSFET Drivers
Features
•
•
•
•
•
Bipolar/CMOS/DMOS Construction
Latch-Up Protected to >500 mA Reverse Current
1.5A-Peak Output Current
4.5V to 18V Operating Range
Low Quiescent Supply Current
- 4 mA at Logic 1 Input
- 400 μA at Logic 0 Input
Switches 1000 pF in 25 ns
Matched Rise and Fall Times
7Ω Output Impedance
<40 ns Typical Delay
Logic-Input Threshold Independent of Supply
Voltage
Logic-Input Protection to –5V
6 pF Typical Equivalent Input Capacitance
25 mV Max. Output Offset from Supply or Ground
Replaces MIC426/7/8 and MIC1426/7/8
Dual inverting, dual non-inverting, and inverting/
non-inverting configurations
ESD Protection
General Description
The MIC4426/4427/4428 family are highly reliable dual
low-side MOSFET drivers fabricated on a
BiCMOS/DMOS process for low power consumption
and high efficiency. These drivers translate TTL or
CMOS input logic levels to output voltage levels that
swing within 25 mV of the positive supply or ground.
Comparable bipolar devices are capable of swinging
only to within 1V of the supply. The MIC4426/7/8 is
available in three configurations: dual inverting, dual
non-inverting, and one inverting plus one non-inverting
output.
The
MIC4426/4427/4428
are
pin-compatible
replacements
for
the
MIC426/427/428
and
MIC1426/1427/1428
with
improved
electrical
performance and rugged design. They can withstand
up to 500 mA of reverse current (either polarity) without
latching and up to 5V noise spikes (either polarity) on
ground pins.
Primarily intended for driving power MOSFETs,
MIC4426/7/8 drivers are suitable for driving other loads
(capacitive, resistive, or inductive) that require
low-impedance, high peak current, and fast switching
time. Other applications include driving heavily loaded
clock lines, coaxial cables, or piezoelectric
transducers. The only load limitation is that total driver
power dissipation must not exceed the limits of the
package.
See MIC4126/4127/4128 for high power and narrow
pulse applications.
•
•
•
•
•
•
•
•
•
•
•
Applications
•
•
•
•
MOSFET Driver
Clock Line Driver
Coax Cable Driver
Piezoelectric Transducer Driver
Package Types
MIC4426
SOIC-8 (M)
MSOP-8 (MM)
PDIP-8 (N)
(Top View)
MIC4426
NC 1
INA 2
GND 3
INB 4
8 NC
7 OUTA
6 V
S
5 OUTB
4
B
5
2
A
7
MIC4427
SOIC-8 (M)
MSOP-8 (MM)
PDIP-8 (N)
(Top View)
MIC4426
NC 1
INA 2
GND 3
INB 4
MIC4428
SOIC-8 (M)
MSOP-8 (MM)
PDIP-8 (N)
(Top View)
MIC4427
MIC4428
NC 1
8 NC
7 OUTA
6 V
S
5 OUTB
4
B
5
2
A
7
7
MIC4427
8 NC
7 OUTA
6 V
S
5 OUTB
4
2
MIC4428
A
INA 2
GND 3
B
5
INB 4
Dual
Inverting
Dual
Noninverting
Inverting +
Noninverting
2019 Microchip Technology Inc.
DS20006202A-page 1
MIC4426/7/8
Functional Block Diagram
V
S
0.6mA
0.1mA
INVERTING
OUTA
INA
NONINVERTING
0.6mA
0.1mA
INVERTING
OUTB
INB
NONINVERTING
GND
DS20006202A-page 2
2019 Microchip Technology Inc.
MIC4426/7/8
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage (V
S
) ................................................................................................................................................. +22V
Input Voltage (V
IN
) .......................................................................................................................V
S
+ 0.3V to GND – 5V
ESD Rating .......................................................................................................................................................... (Note
1)
Operating Ratings ††
Supply Voltage (V
S
) ................................................................................................................................... +4.5V to +18V
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
†† Notice:
The device is not guaranteed to function outside its operating ratings.
Note 1:
Devices are ESD sensitive. Handling precautions are recommended.
ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
4.5V ≤ V
S
≤ 18V; T
A
= +25°C,
bold
values valid for full specified temperature range;
unless noted.
Note 1
Parameter
Input
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch-Up Protection
Switching Time
Rise Time
Fall Time
Delay Time
Delay Time
Note 1:
t
r
t
f
t
D1
t
D2
—
—
—
—
—
—
—
—
18
20
15
29
17
19
23
27
30
40
20
40
30
40
50
60
ns
ns
ns
ns
Test
Figure 1-1
—
Test
Figure 1-1
—
Test
Figure 1-1
—
Test
Figure 1-1
—
V
OH
V
OL
R
O
I
PK
I
V
S
–
0.025
—
—
—
—
>500
—
—
6
8
1.5
—
—
0.025
10
12
—
—
V
V
Ω
A
mA
—
—
I
OUT
= 10 mA, V
S
= 18V
—
Withstand Reverse Current
V
IH
V
IL
I
IN
2.4
2.4
—
—
–1
1.4
1.5
1.1
1.0
—
—
—
0.8
0.8
1
V
V
μA
—
—
0V ≤ V
IN
≤ V
S
Sym.
Min.
Typ.
Max.
Units
Conditions
Specification for packaged product only.
2019 Microchip Technology Inc.
DS20006202A-page 3
MIC4426/7/8
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Characteristics:
4.5V ≤ V
S
≤ 18V; T
A
= +25°C,
bold
values valid for full specified temperature range;
unless noted.
Note 1
Parameter
Pulse Width
Power Supply
Power Supply Current
Power Supply Current
Note 1:
I
S
I
S
0.6
—
—
—
1.4
1.5
0.18
0.19
4.5
8
0.4
0.6
mA
mA
V
INA
= V
INB
= 3.0V
—
V
INA
= V
INB
= 0V
—
Sym.
t
PW
Min.
400
Typ.
—
Max.
—
Units
ns
Conditions
Test
Figure 1-1
Specification for packaged product only.
TEMPERATURE SPECIFICATIONS
Parameters
Temperature Ranges
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature
Junction Operating Temperature
Range
Junction Operating Temperature
Range
Package Thermal Resistances
Thermal Resistance, PDIP 8-Ld
Thermal Resistance, PDIP 8-Ld
Thermal Resistance, SOIC 8-Ld
Thermal Resistance, SOIC 8-Ld
Thermal Resistance, MSOP 8-Ld
Note 1:
JA
JC
JA
JC
JA
—
—
—
—
—
130
42
120
75
250
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
—
—
—
—
—
T
J
T
S
—
T
J
T
J
—
–65
—
0
–40
—
—
—
—
—
+150
+150
+300
+70
+85
°C
°C
°C
°C
°C
—
—
10 sec.
Z option
Y option
Sym.
Min.
Typ.
Max.
Units
Conditions
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
JA
). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.
DS20006202A-page 4
2019 Microchip Technology Inc.
MIC4426/7/8
Test Circuits
V
S
= 18V
6
0.1μF
7
4.7μF
INA
2
A
MIC4426
OUTA
1000pF
INB
4
B
5
OUTB
1000pF
INPUT
5V
90%
10%
0V
V
S
90%
t
D1
t
P W
2.5V
t
F
t
D2
t
R
OUTPUT
10%
0V
FIGURE 1-1:
Inverting Driver Switching Time.
V
S
= 18V
6
0.1μF
7
4.7μF
INA
2
A
MIC4427
OUTA
1000pF
INB
4
B
5
OUTB
1000pF
INPUT
5V
90%
10%
0V
V
S
90%
t
D1
t
P W
t
R
2.5V
t
D2
t
F
OUTPUT
10%
0V
FIGURE 1-2:
Non-Inverting Driver Switching Time.
2019 Microchip Technology Inc.
DS20006202A-page 5
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