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IDT7024S20JI

产品描述Multi-Port SRAM, 4KX16, 20ns, CMOS, PQCC84
产品类别存储    存储   
文件大小196KB,共22页
制造商IDT (Integrated Device Technology)
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IDT7024S20JI概述

Multi-Port SRAM, 4KX16, 20ns, CMOS, PQCC84

IDT7024S20JI规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称IDT (Integrated Device Technology)
Reach Compliance Codeunknown
最长访问时间20 ns
I/O 类型COMMON
JESD-30 代码S-PQCC-J84
JESD-609代码e0
内存密度65536 bit
内存集成电路类型MULTI-PORT SRAM
内存宽度16
湿度敏感等级1
端口数量2
端子数量84
字数4096 words
字数代码4000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织4KX16
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码QCCJ
封装等效代码LDCC84,1.2SQ
封装形状SQUARE
封装形式CHIP CARRIER
并行/串行PARALLEL
电源5 V
认证状态Not Qualified
最大待机电流0.000015 A
最小待机电流4.5 V
最大压摆率0.37 mA
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn85Pb15)
端子形式J BEND
端子节距1.27 mm
端子位置QUAD

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HIGH-SPEED
4K x 16 DUAL-PORT
STATIC RAM
IDT7024S/L
Features
True Dual-Ported memory cells which allow simultaneous
reads of the same memory location
High-speed access
– Military: 20/25/35/55/70ns (max.)
– Industrial: 55ns (max.)
– Commercial: 15/17/20/25/35/55ns (max.)
Low-power operation
– IDT7024S
Active: 750mW (typ.)
Standby: 5mW (typ.)
– IDT7024L
Active: 750mW (typ.)
Standby: 1mW (typ.)
Separate upper-byte and lower-byte control for multiplexed
bus compatibility
IDT7024 easily expands data bus width to 32 bits or more
using the Master/Slave select when cascading more than
one device
M/S = H for
BUSY
output flag on Master
M/S = L for
BUSY
input on Slave
Interrupt Flag
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Battery backup operation—2V data retention
TTL-compatible, single 5V (±10%) power supply
Available in 84-pin PGA, Flatpack, PLCC, and 100-pin Thin
Quad Flatpack
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts availble, see ordering information
Functional Block Diagram
R/W
L
UB
L
R/W
R
UB
R
LB
L
CE
L
OE
L
LB
R
CE
R
OE
R
I/O
8L
-I/O
15L
I/O
0L
-I/O
7L
BUSY
L
A
11L
A
0L
(1,2)
I/O
8R
-I/O
15R
I/O
Control
I/O
Control
I/O
0R
-I/O
7R
BUSY
R
Address
Decoder
12
(1,2)
MEMORY
ARRAY
12
Address
Decoder
A
11R
A
0R
CE
L
OE
L
R/W
L
SEM
L
(2)
INT
L
NOTES:
1. (MASTER):
BUSY
is output; (SLAVE):
BUSY
is input.
2.
BUSY
outputs and
INT
outputs are non-tri-stated push-pull.
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
CE
R
OE
R
R/W
R
SEM
R
INT
R
(2)
2740 drw 01
M/S
JULY 2005
1
©2005 Integrated Device Technology, Inc.
DSC 2740/12

IDT7024S20JI相似产品对比

IDT7024S20JI IDT7024L35JI IDT7024S20JI8 IDT7024S15PFG8 IDT7024S20PFI8
描述 Multi-Port SRAM, 4KX16, 20ns, CMOS, PQCC84 Multi-Port SRAM, 4KX16, 35ns, CMOS, PQCC84, PQCC-84 Multi-Port SRAM, 4KX16, 20ns, CMOS, PQCC84 Multi-Port SRAM, 4KX16, 15ns, CMOS, PQFP100 Multi-Port SRAM, 4KX16, 20ns, CMOS, PQFP100
是否Rohs认证 不符合 不符合 不符合 符合 不符合
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
Reach Compliance Code unknown not_compliant not_compliant unknown not_compliant
最长访问时间 20 ns 35 ns 20 ns 15 ns 20 ns
I/O 类型 COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 S-PQCC-J84 S-PQCC-J84 S-PQCC-J84 S-PQFP-G100 S-PQFP-G100
内存密度 65536 bit 65536 bit 65536 bit 65536 bit 65536 bit
内存集成电路类型 MULTI-PORT SRAM MULTI-PORT SRAM MULTI-PORT SRAM MULTI-PORT SRAM MULTI-PORT SRAM
内存宽度 16 16 16 16 16
端口数量 2 2 2 2 2
端子数量 84 84 84 100 100
字数 4096 words 4096 words 4096 words 4096 words 4096 words
字数代码 4000 4000 4000 4000 4000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C 85 °C 85 °C 70 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C - -40 °C
组织 4KX16 4KX16 4KX16 4KX16 4KX16
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 QCCJ QCCJ QCCJ QFP QFP
封装等效代码 LDCC84,1.2SQ LDCC84,1.2SQ LDCC84,1.2SQ QFP100,.63SQ,20 QFP100,.63SQ,20
封装形状 SQUARE SQUARE SQUARE SQUARE SQUARE
封装形式 CHIP CARRIER CHIP CARRIER CHIP CARRIER FLATPACK FLATPACK
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
电源 5 V 5 V 5 V 5 V 5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大待机电流 0.000015 A 0.004 A 0.000015 A 0.000015 A 0.000015 A
最小待机电流 4.5 V 2 V 4.5 V 4.5 V 4.5 V
最大压摆率 0.37 mA 0.25 mA 0.29 mA 0.31 mA 0.29 mA
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL COMMERCIAL INDUSTRIAL
端子形式 J BEND J BEND J BEND GULL WING GULL WING
端子节距 1.27 mm 1.27 mm 1.27 mm 0.5 mm 0.5 mm
端子位置 QUAD QUAD QUAD QUAD QUAD
JESD-609代码 e0 - e0 e3 e0
湿度敏感等级 1 - 1 3 3
端子面层 Tin/Lead (Sn85Pb15) - Tin/Lead (Sn85Pb15) Matte Tin (Sn) - annealed Tin/Lead (Sn85Pb15)
ECCN代码 - EAR99 EAR99 EAR99 EAR99
是否无铅 - - 含铅 不含铅 含铅
峰值回流温度(摄氏度) - - 225 260 240
处于峰值回流温度下的最长时间 - - 30 30 20

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