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BTB08-600BW3G,
BTB08-800BW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full‐wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
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•
•
•
•
•
•
•
•
Blocking Voltage to 800 V
On‐State Current Rating of 8 Amperes RMS at 25°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt - 2000 V/ms minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO‐220AB Package
High Commutating dI/dt - 4 A/ms minimum at 125°C
These are Pb-Free Devices
Rating
Symbol
V
DRM,
V
RRM
600
800
I
T(RMS)
I
TSM
8.0
90
A
A
Value
Unit
V
TRIACS
8 AMPERES RMS
600 thru 800 VOLTS
MT2
G
4
MT1
MARKING
DIAGRAM
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Peak Repetitive Off-State Voltage (Note 1)
(T
J
= -40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTB08-600BW3G
BTB08-800BW3G
On‐State RMS Current
(Full Cycle Sine Wave, 60 Hz, T
C
= 80°C)
Peak Non‐Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
C
= 25°C)
Circuit Fusing Consideration (t = 10 ms)
Non-Repetitive Surge Peak Off-State
Voltage (T
J
= 25°C, t = 10ms)
Peak Gate Current (T
J
= 125°C, t = 20ms)
Peak Gate Power
(Pulse Width
≤
1.0
ms,
T
C
= 80°C)
Average Gate Power (T
J
= 125°C)
Operating Junction Temperature Range
Storage Temperature Range
1
2
3
TO-220AB
CASE 221A
STYLE 4
BTB08-xBWG
AYWW
I
2
t
V
DSM/
V
RSM
I
GM
P
GM
P
G(AV)
T
J
T
stg
36
V
DSM/
V
RSM
+100
4.0
20
1.0
-40 to +125
-40 to +150
A
2
sec
V
A
W
W
°C
°C
x
A
Y
WW
G
= 6 or 8
= Assembly Location
= Year
= Work Week
= Pb-Free Package
PIN ASSIGNMENT
1
2
3
4
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device
BTB08-600BW3G
BTB08-800BW3G
Package
TO-220AB
(Pb-Free)
TO-220AB
(Pb-Free)
Shipping
50 Units / Rail
50 Units / Rail
*For additional information on our Pb-Free strategy and
soldering details, please download the ON Semicon‐
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2008
1
February, 2008 - Rev. 1
Publication Order Number:
BTB08-600BW3/D
BTB08-600BW3G, BTB08-800BW3G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction-to-Case
Junction-to-Ambient
Symbol
R
qJC
R
qJA
T
L
Value
2.5
60
260
Unit
°C/W
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
ON CHARACTERISTICS
Peak On‐State Voltage (Note 2)
(I
TM
=
±
11 A Peak)
Gate Trigger Current (Continuous dc) (V
D
= 12 V, R
L
= 30
W)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
Holding Current
(V
D
= 12 V, Gate Open, Initiating Current =
±100
mA)
Latching Current (V
D
= 24 V, I
G
= 60 mA)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
Gate Trigger Voltage (V
D
= 12 V, R
L
= 30
W)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
Gate Non-Trigger Voltage (T
J
= 125°C)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, T
J
= 125°C, No Snubber)
Critical Rate of Rise of On-State Current
(T
J
= 125°C, f = 120 Hz, I
G
= 2 x I
GT
, tr
≤
100 ns)
Critical Rate of Rise of Off‐State Voltage
(V
D
= 0.66 x V
DRM
, Exponential Waveform, Gate Open, T
J
= 125°C)
2. Indicates Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
(dI/dt)
c
dI/dt
dV/dt
4.0
-
2000
-
-
-
-
50
-
A/ms
A/ms
V/ms
V
TM
I
GT
2.5
2.5
2.5
I
H
I
L
-
-
-
V
GT
0.5
0.5
0.5
V
GD
0.2
0.2
0.2
-
-
-
-
-
-
-
-
-
1.7
1.1
1.1
V
-
-
-
70
90
70
V
-
-
-
-
-
50
50
50
50
mA
mA
-
-
1.55
V
mA
T
J
= 25°C
T
J
= 125°C
I
DRM
/
I
RRM
mA
-
-
-
-
0.005
1.0
Symbol
Min
Typ
Max
Unit
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2
BTB08-600BW3G, BTB08-800BW3G
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant 3
MainTerminal 2 -
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(-) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
-
(-) MT2
(-) MT2
+ I
GT
Quadrant III
(-) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant IV
-
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in-phase signals (using standard AC lines) quadrants I and III are used.
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3
BTB08-600BW3G, BTB08-800BW3G
125
PAV, AVERAGE POWER (WATTS)
TC, CASE TEMPERATURE (
°
C)
120
α
= 120, 90, 60, 30°
115
α
= 180°
110
DC
105
12
DC
10
180°
8
6
4
90°
2
0
α
= 30°
60°
120°
100
0
1
3
4
5
6
I
T(RMS)
, RMS ON‐STATE CURRENT (AMP)
2
7
8
0
1
2
3
4
5
6
I
T(RMS)
, ON‐STATE CURRENT (AMP)
7
8
Figure 1. RMS Current Derating
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 2. On‐State Power Dissipation
100
1
TYPICAL AT
T
J
= 25°C
MAXIMUM @ T
J
= 125°C
0.1
I T, INSTANTANEOUS ON‐STATE CURRENT (AMP)
10
0.01
0.1
1
10
100
t, TIME (ms)
1000
1 · 10
4
Figure 4. Thermal Response
50
MAXIMUM @ T
J
= 25°C
I
H
, HOLD CURRENT (mA)
1
45
40
35
30
25
20
15
10
5
-40 -25 -10 5
20
35
50
65
80
95
110 125
MTI2 Negative
MTI2 Positive
0.1
0
0.5
1
1.5
2
2.5
3
3.5
V
T
, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS)
4
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Hold Current Variation
Figure 3. On‐State Characteristics
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