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JANHC1N5295

产品描述Current Regulator Diode, 0.82mA I(S), 1.25V V(L), Silicon, DIE-1
产品类别分立半导体    二极管   
文件大小17KB,共1页
制造商Microsemi
官网地址https://www.microsemi.com
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JANHC1N5295概述

Current Regulator Diode, 0.82mA I(S), 1.25V V(L), Silicon, DIE-1

JANHC1N5295规格参数

参数名称属性值
厂商名称Microsemi
零件包装代码DIE
包装说明S-XUUC-N1
针数1
Reach Compliance Codecompliant
ECCN代码EAR99
配置SINGLE
二极管元件材料SILICON
二极管类型CURRENT REGULATOR DIODE
JESD-30 代码S-XUUC-N1
JESD-609代码e0
最大限制电压1.25 V
元件数量1
端子数量1
封装主体材料UNSPECIFIED
封装形状SQUARE
封装形式UNCASED CHIP
认证状态Not Qualified
参考标准MIL-19500/463
标称调节电流 (Ireg)0.82 mA
表面贴装YES
技术FIELD EFFECT
端子面层TIN LEAD
端子形式NO LEAD
端子位置UPPER

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• 1N5283 THRU 1N5314 AVAILABLE IN
JANHC AND JANKC
PER MIL-PRF-19500/463
• CURRENT REGULATOR CHIPS
• ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE
• ELECTRICALLY EQUIVALENT TO 1N5283 THRU 1N5314
• CONSTANT CURRENT OVER WIDE VOLTAGE RANGE
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
WITH THE EXCEPTION OF SOLDER REFLOW
CD5283
thru
CD5314
MAXIMUM RATINGS
Operating Temperature: -55°C to +175°C
Storage Temperature: -55°C to +175°C
Peak Operating Voltage: 100 VOLTS
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise speci½ed
13 MILS
MAXIMUM
LIMITING
VOLTAGE
@ lL = 0.8 lp (min)
VL (VOLTS)
1.00
1.00
1.00
1.00
1.00
1.05
1.05
1.05
1.10
1.13
1.15
1.20
1.25
1.29
1.35
1.40
1.45
1.50
1.55
1.60
1.65
1.75
1.85
1.95
2.00
2.15
2.25
2.35
2.50
2.60
2.75
2.90
2.75
2.35
1.95
1.60
1.35
1.00
0.870
0.750
0.560
0.470
0.400
0.335
0.290
0.240
0.205
0.180
0.155
0.135
0.115
0.105
0.092
0.074
0.061
0.052
0.044
0.035
0.029
0.024
0.020
0.017
0.014
0.012
TYPE
NUMBER
NOM
CD5283
CD5284
CD5285
CD5286
CD5287
CD5288
CD5289
CD5290
CD5291
CD5292
CD5293
CD5294
CD5295
CD5296
CD5297
CD5298
CD5299
CD5300
CD5301
CD5302
CD5303
CD5304
CD5305
CD5306
CD5307
CD5308
CD5309
CD5310
CD5311
CD5312
CD5313
CD5314
0.22
0.24
0.27
0.30
0.33
0.39
0.43
0.47
0.56
0.62
0.68
0.75
0.82
0.91
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.80
2.00
2.20
2.40
2.70
3.00
3.30
3.60
3.90
4.30
4.70
REGULATOR CURRENT
lp (mA) @ VT = 25V
(Note 3)
MIN
0.198
0.216
0.243
0.270
0.297
0.351
0.387
0.423
0.504
0.558
0.612
0.675
0.738
0.819
0.900
0.990
1.08
1.17
1.26
1.35
1.44
1.62
1.80
1.98
2.16
2.43
2.70
2.97
3.24
3.51
3.87
4.23
MAX
0.242
0.264
0.297
0.330
0.363
0.429
0.473
0.517
0.616
0.682
0.748
0.825
0.902
1.001
1.100
1.210
1.32
1.43
1.54
1.65
1.76
1.98
2.20
2.42
2.64
2.97
3.30
3.63
3.96
4.29
4.73
5.17
MINIMUM
DYNAMIC
IMPEDANCE
@VT = 25V
ZT (M )
(Note 1)
25.0
19.0
14.0
9.0
6.6
4.10
3.30
2.70
1.90
1.55
1.35
1.15
1.00
0.880
0.800
0.700
0.640
0.580
0.540
0.510
0.475
0.420
0.395
0.370
0.345
0.320
0.300
0.280
0.265
0.255
0.245
0.235
MINIMUM
KNEE
IMPEDANCE
@VK = 6.0 V
ZK (M )
(Note 2)
BACKSIDE IS CATHODE
A = Anode
DESIGN DATA
METALLIZATION:
Top: (Anode).......................Al
Back: (Cathode)..................Au
AL THICKNESS.......25,000
Å
Min
GOLD THICKNESS...4,000
Å
Min
CHIP THICKNESS.............10
Mils
TOLERANCES:
ALL Dimensions
+ 2 mils, Except Anode Pad
Where Tolerance is + 0.1 mils.
NOTE 1
NOTE 2
NOTE 3
ZT is derived by superimposing A 90Hz RMS signal equal to 10% of VT on VT.
ZK is derived by superimposing A 90Hz RMS signal equal to 10% of VK on VK.
IP is read using a pulse measurement, 10 milliseconds maximum.
6 LAKE STREET, LAWRENCE,
PHONE (978) 620-2600
WEBSITE: http://www.microsemi.com
M A S S A C H U S E T T S 01841
FAX (978) 689-0803
205
28 MILS

 
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