HMC413QS16G
/
413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Typical Applications
This amplifier is ideal for use as a power/driver
amplifier for 1.6 - 2.2 GHz applications:
• Cellular / PCS / 3G
• Portable & Infrastructure
Features
Gain: 23 dB
Saturated Power: +29.5 dBm
42% PAE
Supply Voltage: +2.75V to +5V
Power Down Capability
Low External Part Count
Included in the HMC-DK002 Designer’s Kit
11
LINEAR & POWER AMPLIFIERS - SMT
• Wireless Local Loop
Functional Diagram
General Description
The HMC413QS16G & HMC413QS16GE are high
efficiency GaAs InGaP Heterojunction Bipolar Tran-
sistor (HBT) MMIC Power amplifiers which operate
between 1.6 and 2.2 GHz. The amplifier is packaged
in a low cost, surface mount 16 leaded package with
an exposed base for improved RF and thermal perfor-
mance. With a minimum of external components, the
amplifier provides 23 dB of gain, +29.5 dBm of satu-
rated power at 42% PAE from a +5V supply voltage.
The amplifier can also operate with a 3.6V supply. Vpd
can be used for full power down or RF output power/
current control.
Electrical Specifi cations,
T
A
= +25° C, As a Function of Vs, Vpd = 3.6V
Vs= 3.6V
Parameter
Frequency
Min.
1.6 - 1.7 GHz
1.7 - 2.0 GHz
2.0 - 2.1 GHz
2.1 - 2.2 GHz
1.6 - 2.2 GHz
1.6 - 2.2 GHz
1.6 - 2.2 GHz
1.6 - 1.7 GHz
1.7 - 2.2 GHz
1.6 - 1.7 GHz
1.7 - 2.2 GHz
1.6 - 1.7 GHz
1.7 - 2.0 GHz
2.0 - 2.2 GHz
1.6 - 2.2 GHz
Vpd= 0V/3.6V
Vpd= 3.6V
tON, tOFF
32
33
32
20
21
18
19
18
17
Typ.
21
22
21
20
0.025
10
8
23
24
25.5
26.5
35
36
35
5.5
0.002/220
7
80
36
37
36
23
24
0.035
Max.
Min.
19
20
19
18
Typ.
22
23
22
21
0.025
10
9
26
27
28.5
29.5
39
40
39
5.5
0.002/270
7
80
0.035
Max.
dB
dB
dB
dB
dB/°C
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
mA
mA
ns
Vs= 5V
Units
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
11 - 50
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC413QS16G
/
413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Gain vs. Temperature, Vs= 3.6V
30
25
20
GAIN (dB)
15
10
5
0
1.3
+25 C
+85 C
-40 C
Gain vs. Temperature, Vs= 5V
30
25
20
GAIN (dB)
15
10
5
0
1.3
+25 C
+85 C
-40 C
11
2.3
2.5
1.5
1.7
1.9
2.1
2.3
2.5
1.5
1.7
1.9
2.1
FREQUENCY (GHz)
FREQUENCY (GHz)
Return Loss, Vs= 3.6V
0
Return Loss, Vs= 5V
0
S11
S22
-4
RETURN LOSS (dB)
RETURN LOSS (dB)
-4
-8
-8
-12
S11
S22
-12
-16
-16
-20
1.3
1.5
1.7
1.9
2.1
2.3
2.5
-20
1.3
1.5
1.7
1.9
2.1
2.3
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature, Vs= 3.6V
32
28
24
P1dB (dBm)
20
16
12
8
4
0
1.3
+25 C
+85 C
-40 C
P1dB vs. Temperature, Vs= 5V
32
28
24
P1dB (dBm)
20
16
12
8
4
0
1.3
+25 C
+85 C
-40 C
1.5
1.7
1.9
2.1
2.3
2.5
1.5
1.7
1.9
2.1
2.3
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 51
LINEAR & POWER AMPLIFIERS - SMT
HMC413QS16G
/
413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Psat vs. Temperature, Vs= 3.6V
32
28
24
Psat (dBm)
Psat vs. Temperature, Vs= 5V
32
28
24
Psat (dBm)
20
16
12
8
4
0
1.3
+25 C
+85 C
-40 C
20
16
12
8
4
+25 C
+85 C
-40 C
11
LINEAR & POWER AMPLIFIERS - SMT
0
1.3
1.5
1.7
1.9
2.1
2.3
2.5
1.5
1.7
1.9
2.1
2.3
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Power Compression@ 1.9 GHz, Vs= 3.6V
46
Pout (dBm), GAIN (dB), PAE (%)
42
38
34
30
26
22
18
14
10
6
2
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
Pout (dBm)
Gain (dB)
PAE (%)
Power Compression@ 1.9 GHz, Vs= 5V
46
Pout (dBm), GAIN (dB), PAE (%)
42
38
34
30
26
22
18
14
10
6
2
-12 -10 -8
-6
-4
-2
0
2
4
6
8
10 12
14
Pout (dBm)
Gain (dB)
PAE (%)
INPUT POWER (dBm)
INPUT POWER (dBm)
Output IP3 vs. Temperature, Vs= 3.6V
42
38
34
IP3 (dBm)
Output IP3 vs. Temperature, Vs= 5V
44
40
36
IP3 (dBm)
32
28
24
20
16
12
1.3
+25 C
+85 C
-40 C
30
26
22
18
14
10
1.3
+25 C
+85 C
-40 C
1.5
1.7
1.9
2.1
2.3
2.5
1.5
1.7
1.9
2.1
2.3
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
11 - 52
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC413QS16G
/
413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Reverse Isolation
vs. Temperature, Vs= 3.6V
0
-10
ISOLATION (dB)
+25 C
+85 C
-40 C
Power Down Isolation, Vs= 3.6V
0
-10
ISOLATION (dB)
-20
-30
-40
-50
-60
1.3
-20
-30
-40
-50
-60
-70
1.3
11
1.5
1.7
1.9
2.1
2.3
2.5
FREQUENCY (GHz)
1.5
1.7
1.9
2.1
2.3
2.5
FREQUENCY (GHz)
Noise Figure vs. Temperature, Vs= 3.6V
10
Noise Figure vs. Temperature, Vs= 5V
10
8
NOISE FIGURE (dB)
NOISE FIGURE (dB)
8
6
6
4
+25 C
+85 C
-40 C
4
+25 C
+85 C
-40 C
2
2
0
1.5
1.7
1.9
2.1
2.3
2.5
0
1.5
1.7
1.9
2.1
2.3
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Gain & Power vs.
Supply Voltage @ 1.9 GHz
30
29
28
27
GAIN (dB)
26
25
24
23
22
21
20
2.75
3.25
3.75
4.25
4.75
P1dB
Psat
Gain
Gain, Power & Quiescent Supply
Current vs. Vpd @ 1.9 GHz, Vcc = +3.6V
34
32
30
28
26
24
22
20
18
16
14
5.25
P1dB, Psat (dBm)
GAIN (dB), P1dB (dBm), Psat (dBm)
28
330
25
Icq
270
22
210
Icq (mA)
19
Gain
P1dB
Psat
150
16
90
13
1.5
1.75
2
2.25
2.5
2.75
3
3.25
30
3.5
Vcc SUPPLY VOLTAGE (Vdc)
Vpd (Vdc)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 53
LINEAR & POWER AMPLIFIERS - SMT
HMC413QS16G
/
413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Control Voltage (Vpd1, Vpd2)
RF Input Power (RFIN)(Vs = +5Vdc,
Vpd = +3.6 Vdc)
Junction Temperature
+5.5 Vdc
+4.0 Vdc
+15 dBm
150 °C
1.56 W
42 °C/W
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
11
LINEAR & POWER AMPLIFIERS - SMT
Continuous Pdiss (T = 85 °C)
(derate 24 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
HMC413QS16G
HMC413QS16GE
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
HMC413
XXXX
HMC413
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
11 - 54
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
