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SB150

产品描述1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL
产品类别半导体    分立半导体   
文件大小256KB,共2页
制造商SY
官网地址http://www.shunyegroup.com/
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SB150概述

1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL

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SB120 THRU SB1B0
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage -
20 to 100 Volts
DO-41
Forward Current -
1.0 Ampere
FEATURES
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160(4.1)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
MECHANICAL DATA
Case:
JEDEC DO-41 molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.012
ounce, 0.33 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
SB SB
120 130
SB
140
SB SB
150 160
SB
170
SB
180
SB
190
SB
1B0
UNITS
VOLTS
VOLTS
VOLTS
Amp
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
1.0
70
49
70
80
56
80
90
63
90
100
70
100
I
FSM
V
F
I
R
C
J
R
q
JA
T
J
,
T
STG
0.55
10.0
110
-65 to +125
40.0
0.70
0.5
5.0
80
50.0
-65 to +150
-65 to +150
0.85
Amps
Volts
mA
pF
C/W
C
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
www.shunyegroup.com

SB150相似产品对比

SB150 SB120 SB140 SB130 SB170 SB180 SB160 SB190 SB1B0
描述 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 20 V, SILICON, SIGNAL DIODE, DO-41 1 A, 40 V, SILICON, SIGNAL DIODE, DO-41 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 1 A, 70 V, SILICON, SIGNAL DIODE 1 A, 80 V, SILICON, SIGNAL DIODE, DO-41 1 A, 60 V, SILICON, SIGNAL DIODE, DO-41 1 A, 90 V, SILICON, SIGNAL DIODE, DO-41 1 A, 20 V, SILICON, SIGNAL DIODE, DO-41

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