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70V3569S5DRGI8: 产品描述Dual-Port SRAM, 16KX36, 5ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM, GREEN, PLASTIC, QFP-208; 产品类别存储存储; 文件大小181KB，共17页; 制造商IDT (Integrated Device Technology)

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70V3569S5DRGI8概述

Dual-Port SRAM, 16KX36, 5ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM, GREEN, PLASTIC, QFP-208

70V3569S5DRGI8规格参数

参数名称	属性值
厂商名称	IDT (Integrated Device Technology)
包装说明	FQFP,
Reach Compliance Code	compliant
最长访问时间	5 ns
其他特性	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE
JESD-30 代码	S-PQFP-G208
JESD-609代码	e3
长度	28 mm
内存密度	589824 bit
内存集成电路类型	DUAL-PORT SRAM
内存宽度	36
功能数量	1
端子数量	208
字数	16384 words
字数代码	16000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	16KX36
封装主体材料	PLASTIC/EPOXY
封装代码	FQFP
封装形状	SQUARE
封装形式	FLATPACK, FINE PITCH
并行/串行	PARALLEL
座面最大高度	4.1 mm
最大供电电压 (Vsup)	3.45 V
最小供电电压 (Vsup)	3.15 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	MATTE TIN
端子形式	GULL WING
端子节距	0.5 mm
端子位置	QUAD
宽度	28 mm

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HIGH-SPEED 3.3V 16K x 36

SYNCHRONOUS PIPELINED

DUAL-PORT STATIC RAM

WITH 3.3V OR 2.5V INTERFACE

Features:

◆

IDT70V3569S

◆

True Dual-Port memory cells which allow simultaneous

access of the same memory location

High-speed clock to data access

– Commercial: 4.2/5/6ns (max.)

– Industrial: 5ns (max)

Pipelined output mode

Counter enable and reset features

Dual chip enables allow for depth expansion without

additional logic

Full synchronous operation on both ports

– 7.5ns cycle time, 133MHz operation (9.6 Gbps bandwidth)

– Fast 4.2ns clock to data out

– 1.8ns setup to clock and 0.7ns hold on all control, data, and

address inputs @ 133MHz

◆

– Data input, address, byte enable and control registers

– Self-timed write allows fast cycle time

Separate byte controls for multiplexed bus and bus

matching compatibility

LVTTL- compatible, single 3.3V (±150mV) power supply for

core

LVTTL- compatible, selectable 3.3V (±150mV)/2.5V (±125mV)

power supply for I/Os and control signals on each port

Industrial temperature range (-40°C to +85°C) is

available for selected speeds

Available in a 208-pin Plastic Quad Flatpack (PQFP),

208-ball fine-pitch Ball Grid Array, and 256-pin Ball

Grid Array

Green parts availble, see ordering instructions

Functional Block Diagram

R/W

B B

3 3

L R

2 1

R/W

Dout0-8_L

Dout9-17_L

Dout18-26_L

Dout27-35_L

Dout0-8_R

Dout9-17_R

Dout18-26_R

Dout27-35_R

16K x 36

MEMORY

ARRAY

I/O

- I/O

35L

Din_L

Din_R

I/O

- I/O

35R

CLK

13L

CNTRST

ADS

CNTEN

CLK

Counter/

Address

Reg.

13R

ADDR_L

ADDR_R

Counter/

Address

Reg.

CNTRST

ADS

CNTEN

4831 tbl 01

OCTOBER 2014

DSC 4831/13

70V3569S5DRGI8相似产品对比

	70V3569S5DRGI8	70V3569S5BCGI8	70V3569S5DRG8	70V3569S4DRG8	70V3569S5BFGI8	70V3569S6DRG8	70V3569S5BCG8
描述	Dual-Port SRAM, 16KX36, 5ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM, GREEN, PLASTIC, QFP-208	Multi-Port SRAM, 16KX36, 5ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM, 1 MM PITCH, GREEN, BGA-256	Dual-Port SRAM, 16KX36, 5ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM, GREEN, PLASTIC, QFP-208	Dual-Port SRAM, 16KX36, 4.2ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM, GREEN, PLASTIC, QFP-208	Multi-Port SRAM, 16KX36, 5ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM, 0.80 MM PITCH, GREEN, FPBGA-208	Dual-Port SRAM, 16KX36, 6ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM, GREEN, PLASTIC, QFP-208	Multi-Port SRAM, 16KX36, 5ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM, 1 MM PITCH, GREEN, BGA-256
包装说明	FQFP,	LBGA, BGA256,16X16,40	FQFP,	FQFP,	LFBGA, BGA208,17X17,32	FQFP,	LBGA, BGA256,16X16,40
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant
最长访问时间	5 ns	5 ns	5 ns	4.2 ns	5 ns	6 ns	5 ns
其他特性	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE	PIPELINED OUTPUT MODE, SELF TIMED WRITE CYCLE
JESD-30 代码	S-PQFP-G208	S-PBGA-B256	S-PQFP-G208	S-PQFP-G208	S-PBGA-B208	S-PQFP-G208	S-PBGA-B256
JESD-609代码	e3	e1	e3	e3	e1	e3	e1
长度	28 mm	17 mm	28 mm	28 mm	15 mm	28 mm	17 mm
内存密度	589824 bit	589824 bit	589824 bit	589824 bit	589824 bit	589824 bit	589824 bit
内存集成电路类型	DUAL-PORT SRAM	MULTI-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	MULTI-PORT SRAM	DUAL-PORT SRAM	MULTI-PORT SRAM
内存宽度	36	36	36	36	36	36	36
功能数量	1	1	1	1	1	1	1
端子数量	208	256	208	208	208	208	256
字数	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words	16384 words
字数代码	16000	16000	16000	16000	16000	16000	16000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	85 °C	70 °C	70 °C	85 °C	70 °C	70 °C
组织	16KX36	16KX36	16KX36	16KX36	16KX36	16KX36	16KX36
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	FQFP	LBGA	FQFP	FQFP	LFBGA	FQFP	LBGA
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	FLATPACK, FINE PITCH	GRID ARRAY, LOW PROFILE	FLATPACK, FINE PITCH	FLATPACK, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	FLATPACK, FINE PITCH	GRID ARRAY, LOW PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
座面最大高度	4.1 mm	1.7 mm	4.1 mm	4.1 mm	1.7 mm	4.1 mm	1.7 mm
最大供电电压 (Vsup)	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V
最小供电电压 (Vsup)	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL
端子面层	MATTE TIN	Tin/Silver/Copper (Sn/Ag/Cu)	MATTE TIN	MATTE TIN	Tin/Silver/Copper (Sn/Ag/Cu)	MATTE TIN	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式	GULL WING	BALL	GULL WING	GULL WING	BALL	GULL WING	BALL
端子节距	0.5 mm	1 mm	0.5 mm	0.5 mm	0.8 mm	0.5 mm	1 mm
端子位置	QUAD	BOTTOM	QUAD	QUAD	BOTTOM	QUAD	BOTTOM
宽度	28 mm	17 mm	28 mm	28 mm	15 mm	28 mm	17 mm
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	-	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)

70V3569S5DRGI8

70V3569S5DRGI8概述

70V3569S5DRGI8规格参数

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