RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
MMBTA13LT1
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* Power dissipation
P
CM
0.3 W(Tamb=25
O
C)
* Collector current
I
CM
0.3 A
* Collector-base voltage
V
(BR)CBO
: 30 V
* Operating and storage junction temperature range
T
J
,T
stg
: -55
O
Cto+150
O
C
SOT-23
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
0.037(0.950)TYP
0.006(0.150)
0.003(0.080)
0.020(0.500)
0.012(0.300)
0.043(1.100)
0.035(0.900)
0.004(0.100)
0.000(0.000)
0.020(0.50)
0.012(0.30)
0.100(2.550)
0.089(2.250)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
o
0.019(2.00)
0.071(1.80)
0.118(3.000)
0.110(2.800)
Dimensions in inches and (millimeters)
RATINGS
Zener Current ( see Table "Characteristics" )
o
O
Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C
SYMBOL
-
P
D
T
J
T
STG
VALUE
-
300
-55 to +150
-55 to +150
UNITS
-
mW
o
Max. Operating Temperature Range
Storage Temperature Range
C
C
o
ELECTRICAL CHARACTERISTICS ( At T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Thermal Resistance Junction to Ambient
Max. Instantaneous Forward Voltage at I
F=
10mA
NOTES : 1. Alumina=0.4*0.3*0.024in.99.5% alumina
SYMBOL
R
θ
JA
V
F
MIN.
-
-
TYP.
-
-
MAX.
417
-
UNITS
o
C/W
Volts
2006-3
ELECTRICAL CHARACTERISTICS
(@TA=25
O
C unless otherwise noted)
Chatacteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (I C = 100µAdc, V BE = 0)
Collector Cutoff Current (V CB = 30Vdc, I E = 0)
Emitter Cutoff Current (V EB = 10Vdc, I C = 0)
V(BR)CES
ICBO
IEBO
30
-
-
-
100
100
Vdc
nVdc
nVdc
Symbol
Min
Max
Unit
ON CHARACTERISTICS(2)
DC Current Gain (I C = 10mAdc, V CE = 5.0Vdc)
(I C = 100mAdc, V CE = 5.0Vdc)
Collector-Emitter Saturation Voltage (I C = 100mAdc, I B = 0.1mAdc)
Base-Emitter On Voltage (I C = 100mAdc, V CE = 5.0Vdc)
5000
hFE
10,000
VCE(sat)
VBE
-
-
-
1.5
2.0
Vdc
Vdc
-
-
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (3) (I C = 10mAdc, V CE = 5.0Vdc, f= 100MHz)
<
<
NOTES : 2. Pulse Test: Pulse Width-300µs,Duty Cycle-2.0%
3. f
T
= |hfe|.ftest
fT
125
-
MHz
RECTRON
RATING AND CHARACTERISTICS CURVES ( MMBTA13LT1 )
500
BANDWIDTH = 1.0 Hz
RS
~
0
en,NOISE VOLTAGE(nV)
in,NOISE CURRENT(PA)
2.0
BANDWIDTH = 1.0 Hz
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
10 20
100µΑ
10µΑ
200
100
10µΑ
50
100µΑ
20
IC= 1.0 mA
10
5.0
10 20
50 100 200 500 1 k 2 k
5 k 10 k 20 k 50 k 100 k
f,FREQUENCY(Hz)
IC= 1.0 mA
50 100 200 500 1 k 2 k
5 k 10 k 20 k 50 k 100 k
f,FREQUENCY(Hz)
Figure 1 Noise Voltage
VT,TOTAL WIDEBAND NOISE VOLTAGE(nV)
Figure 2 Noise Current
14
BANDWIDTH = 10 Hz TO 15.7 kHz
200
BANDWIDTH = 10 Hz TO 15.7 kHz
100
70
50
30
20
1.0 mA
10
100
µA
IC= 1.0
µA
=10µA
12
NF,NOISE FIGURE(dB)
10
10
µA
8.0
6.0
4.0
2.0
0
1.0
IC=1.0mA
100
µA
1.0
2.0
5.0
10
20
50
100 200
500
100
2.0
5.0
10
20
50
100
200
500
100
RS,SOURCE RESISTANCE(KΩ)
RS,SOURCE RESISTANCE(KΩ)
Figure 3. Total Wideband Noise Voltage
20
TJ=25
O
C
C, CAPACITANCE(PF)
|hfe|, SMALL-SIGNALCURRENT GAIN
Figure 4 Wideband Noise Figure
4.0
VV =5.0V
CE =5.0V
CE
f=100MHz
f=100MHz
TJ=25
O
C
TJ=25
O
C
10
7.0
5.0
Cibo
Cobo
2.0
1.0
0.8
0.6
0.4
3.0
2.0
0.04
0.1
0.2
0.4
1.0 2.0
4.0
10
20
40
0.2
0.5
1.0
2.0
0.5
10
20
50
100 200
500
VR,REVERSE VOLTAGE(VOLTS)
IC,COLLECTOR CURRENT (mA)
Figure 5 Capacitance
Figure 6 High Frequency Current Gain
RECTRON
RATING AND CHARACTERISTICS CURVES ( MMBTA13LT1 )
VCE, COLLECTOR-EMITTER VOLTAGE(VOLTS)
200 k
TJ=125
O
C
hFE, DC CURRENT GAIN
3.0
TJ= 25
O
C
2.5
IC = 10 mA
2.0
50 mA
250 mA 500 mA
100 k
70 k
50 k
30 k
20 k
10 k
7.0 k
5.0 k
3.0 k
2.0 k
5.0 7.0 10
25 C
O
1.5
-55
O
C
VCE= 5.0 V
1.0
20
30
50 70 100
200 300
500
IC,COLLECTOR CURRENT (mA)
0.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
IB,BASE CURRENT (µA)
Figure 7 DC Current Gain
R
θV
,TEMPERATURE COEFFICIENTS(mV/5C)
Figure 8 Collector Saturation Region
-1.0
*APPLIES FOR IC/IB
-
hFE/3.0
<
*R
ΘVC
FOR VCE(sat)
-55
O
C TO 25
O
C
-3.0
25
O
C TO 125
O
C
-4.0
25
O
C TO 125
O
C
1.6
TJ=25 C
1.4
V, VOLAGE (VOLTS)
O
-2.0
VBE(sat)@IC/IB=1000
1.2
VBE(on) @ VCE = 5.0V
1.0
Θ
VB FOR VBE
-5.0
-55
O
C TO 25
O
C
0.8
VCE(sat)@IC/IB=1000
0.6
5.0 7.0
10
20
30
50 70 100 200 300
500
IC,COLLECTOR CURRENT (mA)
-6.0
5.0 7.0 10
20 30
50 70 100
200 300
500
IC,COLLECTOR CURRENT (mA)
Figure 9 "ON" Voltages
1.0
0.7
0.5
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.05
SINGLE PULSE
Figure 10 Temperature Coefficients
D = 0.5
0.2
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
SINGLE PULSE
Z
θJC(t)=r(t)
R
θJC
TJ(pk)-TC=P(pk)Z
θJC(t)
Z
θJA(t)=r(t)
R
θJA
TJ(pk)-TA=P(pk)Z
θJA(t)
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
Figure 11 Thermal Response
RECTRON
RATING AND CHARACTERISTICS CURVES ( MMBTA13LT1 )
1.0 k
700
500
300
200
100
70
50
30
20
10
0.4 0.6
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0
2.0
4.0 6.0
10
20
VCE,COLLECTOR-EMITTER VOLTAGE(VOLTS)
40
TA=25 C
O
1.0 ms
TC=25 C
1.0 s
O
IC, COLLECTOR CURRENT(mA)
100µs
Figure 12 Active Region Safe Operating Area
RECTRON
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