TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | NXP(恩智浦) |
| 零件包装代码 | TO-92 |
| 包装说明 | CYLINDRICAL, O-PBCY-T3 |
| 针数 | 3 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | BUILT IN BIAS RESISTOR |
| 最大集电极电流 (IC) | 0.1 A |
| 集电极-发射极最大电压 | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 100 |
| JEDEC-95代码 | TO-92 |
| JESD-30 代码 | O-PBCY-T3 |
| JESD-609代码 | e3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | ROUND |
| 封装形式 | CYLINDRICAL |
| 极性/信道类型 | NPN |
| 最大功率耗散 (Abs) | 0.5 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | TIN |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | BOTTOM |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| PDTC115TS | PDTC115TS126 | PDTC115TU | 934058805115 | PDTC115TK | |
|---|---|---|---|---|---|
| 描述 | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal | Bipolar Transistors - Pre-Biased TRANS BISS AMMO LARGE | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP General Purpose Small Signal | 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, 3 PIN | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, PLASTIC, SC-59A, 3 PIN, BIP General Purpose Small Signal |
| 是否Rohs认证 | 符合 | - | 符合 | - | 符合 |
| 厂商名称 | NXP(恩智浦) | - | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) |
| 零件包装代码 | TO-92 | - | SC-70 | - | SOT-23 |
| 包装说明 | CYLINDRICAL, O-PBCY-T3 | - | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
| 针数 | 3 | - | 3 | - | 3 |
| Reach Compliance Code | unknown | - | compliant | unknown | unknown |
| ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 |
| 其他特性 | BUILT IN BIAS RESISTOR | - | BUILT IN BIAS RESISTOR | BUILT IN BIAS RESISTOR | BUILT IN BIAS RESISTOR |
| 最大集电极电流 (IC) | 0.1 A | - | 0.1 A | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 50 V | - | 50 V | 50 V | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR | - | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 100 | - | 100 | 100 | 100 |
| JESD-30 代码 | O-PBCY-T3 | - | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| JESD-609代码 | e3 | - | e3 | - | e3 |
| 元件数量 | 1 | - | 1 | 1 | 1 |
| 端子数量 | 3 | - | 3 | 3 | 3 |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | ROUND | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | CYLINDRICAL | - | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | NPN | - | NPN | NPN | NPN |
| 最大功率耗散 (Abs) | 0.5 W | - | 0.2 W | - | 0.25 W |
| 认证状态 | Not Qualified | - | Not Qualified | - | Not Qualified |
| 表面贴装 | NO | - | YES | YES | YES |
| 端子面层 | TIN | - | Tin (Sn) | - | TIN |
| 端子形式 | THROUGH-HOLE | - | GULL WING | GULL WING | GULL WING |
| 端子位置 | BOTTOM | - | DUAL | DUAL | DUAL |
| 晶体管应用 | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | - | SILICON | SILICON | SILICON |
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