TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, 3 PIN, BIP General Purpose Small Signal
参数名称 | 属性值 |
是否Rohs认证 | 符合 |
厂商名称 | NXP(恩智浦) |
零件包装代码 | SC-75 |
包装说明 | SMALL OUTLINE, R-PDSO-G3 |
针数 | 3 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
其他特性 | BUILT-IN BIAS RESISTOR |
最大集电极电流 (IC) | 0.1 A |
集电极-发射极最大电压 | 50 V |
配置 | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE) | 200 |
JESD-30 代码 | R-PDSO-G3 |
JESD-609代码 | e3 |
元件数量 | 1 |
端子数量 | 3 |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
峰值回流温度(摄氏度) | 260 |
极性/信道类型 | NPN |
认证状态 | Not Qualified |
表面贴装 | YES |
端子面层 | TIN |
端子形式 | GULL WING |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | 40 |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
PDTC114TET/R | PDTC114TKT/R | PDTC114TTT/R | PDTC114TUT/R | |
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描述 | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, 3 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SC-59, 3 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-70, 3 PIN, BIP General Purpose Small Signal |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 |
厂商名称 | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) |
零件包装代码 | SC-75 | SOT-23 | SOT-23 | SC-70 |
包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
针数 | 3 | 3 | 3 | 3 |
Reach Compliance Code | unknown | unknown | unknown | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
其他特性 | BUILT-IN BIAS RESISTOR | BUILT-IN BIAS RESISTOR | BUILT-IN BIAS RESISTOR | BUILT-IN BIAS RESISTOR |
最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
集电极-发射极最大电压 | 50 V | 50 V | 50 V | 50 V |
配置 | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE) | 200 | 200 | 200 | 200 |
JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
JESD-609代码 | e3 | e3 | e3 | e3 |
元件数量 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
峰值回流温度(摄氏度) | 260 | 260 | 260 | 260 |
极性/信道类型 | NPN | NPN | NPN | NPN |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES |
端子面层 | TIN | TIN | TIN | Tin (Sn) |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL |
处于峰值回流温度下的最长时间 | 40 | 40 | 40 | 40 |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
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