DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PN2369A
NPN switching transistor
Product specification
Supersedes data of 1999 Apr 14
2004 Dec 08
Philips Semiconductors
Product specification
NPN switching transistor
FEATURES
•
Low current (max. 200 mA)
•
Low voltage (max. 15 V).
APPLICATIONS
•
High-speed switching applications.
DESCRIPTION
NPN switching transistor in a TO-92; SOT54 plastic
package.
PINNING
PIN
1
2
3
collector
base
emitter
PN2369A
DESCRIPTION
1
handbook, halfpage
2
3
1
2
3
MAM279
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PN2369A
SC-43A
DESCRIPTION
plastic single-ended leaded (through hole) package; 3 leads
VERSION
SOT54
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
40
15
5
200
300
100
500
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Dec 08
2
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
250
UNIT
K/W
Philips Semiconductors
Product specification
NPN switching transistor
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
CONDITIONS
V
CB
= 20 V; I
E
= 0 A
V
CB
= 20 V; I
E
= 0 A; T
amb
= 125
°C
V
EB
= 4 V; I
C
= 0 A
V
CE
= 350 mV; I
C
= 10 mA
V
CE
= 350 mV; I
C
= 10 mA;
T
amb
=
−55 °C
V
CE
= 400 mV; I
C
= 30 mA
V
CE
= 1 V; I
C
= 100 mA
V
CEsat
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 1 mA
I
C
= 10 mA; I
B
= 10 mA
I
C
= 30 mA; I
B
= 3 mA
I
C
= 100 mA; I
B
= 10 mA
V
BEsat
C
c
f
T
t
on
t
d
t
r
t
off
t
s
t
f
base-emitter saturation voltage
collector capacitance
transition frequency
I
C
= 10 mA; I
B
= 1 mA
V
CB
= 5 V; I
E
= i
e
= 0 A; f = 1 MHz
MIN.
−
−
−
40
20
30
20
−
−
−
−
700
−
PN2369A
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
8
−
−
10
−
−
MAX. UNIT
400
30
100
120
−
−
−
200
300
250
500
850
4
−
10
4
6
20
10
10
mV
mV
mV
mV
mV
pF
MHz
nA
µA
nA
V
CE
= 10 V; I
C
= 10 mA; f = 100 MHz 500
I
Con
= 10 mA; I
Bon
= 3 mA;
I
Boff
=
−1.5
mA
−
−
−
−
−
−
Switching times (between 10% and 90% levels);
see Fig.2
turn-on time
delay time
rise time
turn-off time
storage time
fall time
ns
ns
ns
ns
ns
ns
2004 Dec 08
3
Philips Semiconductors
Product specification
NPN switching transistor
PN2369A
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MLB826
V
i
= 0.5 V to 4.2 V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
1 ns.
R1 = 56
Ω;
R2 = 1 kΩ; R
B
= 1 kΩ; R
C
= 270
Ω.
V
BB
= 0.2 V; V
CC
= 2.7 V.
Oscilloscope: input impedance Z
i
= 50
Ω.
Fig.2 Test circuit for switching times.
2004 Dec 08
4
Philips Semiconductors
Product specification
NPN switching transistor
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
PN2369A
SOT54
c
E
d
A
L
b
1
D
2
e1
e
3
b
1
L1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
5.2
5.0
b
0.48
0.40
b1
0.66
0.55
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
e
2.54
e1
1.27
L
14.5
12.7
L
1(1)
max.
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
REFERENCES
IEC
JEDEC
TO-92
JEITA
SC-43A
EUROPEAN
PROJECTION
ISSUE DATE
04-06-28
04-11-16
2004 Dec 08
5