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DTC114EUA

产品描述NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 50mA; GI: 30; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 10K Ohm; R2 (KΩ): 10K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-323
产品类别分立半导体    晶体管   
文件大小182KB,共4页
制造商Galaxy Microelectronics
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DTC114EUA概述

NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 50mA; GI: 30; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 10K Ohm; R2 (KΩ): 10K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-323

DTC114EUA规格参数

参数名称属性值
厂商名称Galaxy Microelectronics
Reach Compliance Codeunknown
其他特性BUILT IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC)0.1 A
集电极-发射极最大电压50 V
配置SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)30
JESD-30 代码R-PDSO-G3
元件数量1
端子数量3
最高工作温度150 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)250 MHz
类别
极性NPN
V(BR)CEO (V) min.50
IC Continuous (mA)50
Gi30
VO(ON) (V)0.3
fT MHz250(typ)
R1 (kΩ)10
R2 (kΩ)10
R1/R2 typ1
Vi(off) (V) max.0.5
Vi(on) (V) min.3
PD (mW)200
AEC QualifiedNo
最高工作温度150
最低工作温度-55
MSL等级1
是否无铅Yes
符合ReachYes
符合RoHSYes
ECCN代码EAR99
Package OutlinesSOT-323

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Production specification
Digital Transistor
FEATURES
Epitaxial planar die construction.
Complementary PNP types available(DTA).
Built-in biasing resistors,R
1
=R
2
Also available in lead free version.
DTC(R
1
=R
2
SERIES)UA
Pb
Lead-free
APPLICATIONS
The NPN style digital transistor.
SOT-323
ORDERING INFORMATION
Type No.
DTC114EUA
DTC143EUA
DTC124EUA
DTC144EUA
Marking
24
23
25
26
Package Code
SOT-323
SOT-323
SOT-323
SOT-323
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CC
Parameter
Supply Voltage
Input Voltage
V
IN
DTC114EUA
DTC124EUA
DTC143EUA
DTC144EUA
DTC114EUA
DTC124EUA
DTC143EUA
DTC144EUA
ALL
Value
50
-10 to+40
-10 to+40
-10 to+30
-10 to+40
50
30
100
30
100
200
-55 to +150
Units
V
V
Output Current
I
O
mA
I
C
(Max.)
P
D
T
j
,T
stg
Output current
Power Dissipation
mA
mW
Operating and Storage and Temperature Range
F075
Rev.A
www.gmesemi.com
1

DTC114EUA相似产品对比

DTC114EUA DTC143EUA DTC124EUA DTC144EUA
描述 NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 50mA; GI: 30; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 10K Ohm; R2 (KΩ): 10K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-323 NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 100mA; GI: 20; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 4.7K Ohm; R2 (KΩ): 4.7K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-323 NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 30mA; GI: 56; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 22K Ohm; R2 (KΩ): 22K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-323 NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 30mA; GI: 68; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 47K Ohm; R2 (KΩ): 47K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-323
厂商名称 Galaxy Microelectronics Galaxy Microelectronics Galaxy Microelectronics Galaxy Microelectronics
Reach Compliance Code unknown unknown unknown unknown
其他特性 BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC) 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V
配置 SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 30 20 56 68
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
元件数量 1 1 1 1
端子数量 3 3 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN NPN NPN
表面贴装 YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 250 MHz 250 MHz 250 MHz 250 MHz
最高工作温度 150 150 °C 150 150
最低工作温度 -55 -55 °C -55 -55
极性 NPN - NPN NPN
V(BR)CEO (V) min. 50 - 50 50
IC Continuous (mA) 50 - 30 30
Gi 30 - 56 68
VO(ON) (V) 0.3 - 0.3 0.3
fT MHz 250(typ) - 250(typ) 250(typ)
R1 (kΩ) 10 - 22 47
R2 (kΩ) 10 - 22 47
R1/R2 typ 1 - 1 1
Vi(off) (V) max. 0.5 - 0.5 0.5
Vi(on) (V) min. 3 - 3 3
PD (mW) 200 - 200 200
AEC Qualified No - No No
MSL等级 1 - 1 1
是否无铅 Yes - Yes Yes
符合Reach Yes - Yes Yes
符合RoHS Yes - Yes Yes
ECCN代码 EAR99 - EAR99 EAR99
Package Outlines SOT-323 - SOT-323 SOT-323

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