HY62SF16201A Series
128Kx16bit full CMOS SRAM
Document Title
128K x16 bit 1.8V Super Low Power Full CMOS Slow SRAM
Revision History
Revision No
05
History
Divide output load into two factors
- tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW
- Others
Add marking information
Draft Date
Dec.10. 2000
Remark
Final
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.05 /Dec. 2000
Hynix Semiconductor
HY62SF16201A
DESCRIPTION
The HY62SF16201A is a high speed, low power
and 2M bit full CMOS SRAM organized as
131,072 words by 16bit. The HY62SF16201A
uses high performance full CMOS process
technology and designed for high speed low
power circuit technology. It is particularly well
suited for used in high density low power system
application. This device has a data retention mode
that guarantees data to remain valid at a minimum
power supply voltage of 1.2V.
Product
Voltage
Speed
No.
(V)
(ns)
HY62SF16201A
1.7~2.3V
85/100/120
HY62SF16201A-I
1.7~2.3V
85/100/120
Notes :
1. Blank : Commercial, I : Industrial
2. Current value is max.
FEATURES
•
Fully static operation and Tri-state output
•
TTL compatible inputs and outputs
•
Battery backup(LL-part)
-. 1.2V(min) data retention
•
Standard pin configuration
-. 48-FBGA
Operation
Current/Icc(mA)
3
3
Standby Current(uA)
LL
SL
3
1
3
1
Temperature
(°C)
0~70
-40~85(I)
PIN CONNECTION
/LB
/OE A0
A1
A4
A6
A7
A2
NC
A0
BLOCK DIAGRAM
ROW
DECODER
SENSE AMP
ADD INPUT BUFFER
IO9 /UB A3
IO10 IO11 A5
Vss IO12 NC
Vcc IO13 NC
/CS IO1
IO2 IO3
IO4 Vcc
I/O1
COLUMNDECODER
DATA I/O
BUFFER
A16 IO5 Vss
MEMORY ARRAY
128K x 16
WRITE DRIVER
IO15 IO14 A14 A15 IO6 IO7
IO16 NC
NC
A8
A12 A13 /WE IO8
A9
A10 A11 NC
/CS
/OE
/LB
/UB
/WE
CONTRO
LLOGIC
A16
I/O16
48-FBGA(Top View)
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
/LB
/UB
Pin Function
Chip Select
Write Enable
Output Enable
Lower Byte Control(I/O1~I/O8)
Upper Byte Control(I/O9~I/O16)
Pin Name
I/O1~I/O16
A0~A16
Vcc
Vss
NC
Pin Function
Data Inputs / Outputs
Address Inputs
Power( 1.7V ~ 2.3V )
Ground
No Connection
Rev.05 /Dec. 2000
2
HY62SF16201A
ORDERING INFORMATION
Part No.
Speed
HY62SF16201ALLF
85/100/120
HY62SF16201ALLF
85/100/120
HY62SF16201ALLF-I
85/100/120
HY62SF16201ALLF-I
85/100/120
Note :
1. Blank : Commercial, I : Industrial
Power
LL-part
SL-part
LL-part
SL-part
Temp.
Package
FBGA
FBGA
FBGA
FBGA
I
I
ABSOLUTE MAXIMUM RATING (1)
Symbol
V
IN,
V
OUT
Vcc
T
A
Parameter
Input/Output Voltage
Power Supply
Operating Temperature
Rating
-0.2 to 3.6
-0.2 to 4.6
0 to 70
-40 to 85
-55 to 150
1.0
260
•
10
Unit
V
V
°C
°C
°C
W
°C •
sec
Remark
HY62SF16201A
HY62SF16201A-I
T
STG
Storage Temperature
P
D
Power Dissipation
T
SOLDER
Ball Soldering Temperature & Time
Note :
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS
H
X
L
L
L
/WE
X
X
H
H
H
/OE
X
X
H
H
L
/LB
X
H
L
X
L
H
L
L
H
L
/UB
X
H
X
L
H
L
L
H
L
L
Mode
Deselected
Deselected
Output Disabled
Output Disabled
Read
I/O
I/O1~I/O8 I/O9~I/O16
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
D
OUT
High-Z
High-Z
D
OUT
D
OUT
D
OUT
D
IN
High-Z
High-Z
D
IN
D
IN
D
IN
Power
Standby
Standby
Active
Active
Active
L
L
X
Write
Active
Note :
1. H=V
IH
, L=V
IL
, X=don't care
2. UB, LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When LB is LOW, data is written or read to the lower byte, I/O 1 -I/O 8.
When UB is LOW, data is written or read to the Upper byte, I/O 9 -I/O 16.
Rev.05 /Dec. 2000
2
HY62SF16201A
RECOMMENDED DC OPERATING CONDITION
Symbol
Parameter
Min.
Vcc
Supply Voltage
1.7
Vss
Ground
0
V
IH
Input High Voltage
1.4
V
IL
Input Low Voltage
-0.3
(1)
Note :
1. VIL = -1.5V for pulse width less than 30ns
2. Typical values is not 100% tested
Typ.
1.8
0
-
-
Max.
2.3
0
Vcc+0.3
0.4
Unit
V
V
V
V
DC ELECTRICAL CHARACTERISTICS
Vcc = 1.7V~2.3V, T
A
= 0°C to 70°C/-40°C to 85°C (I)
Symbol
Parameter
Test Condition
I
LI
Input Leakage Current
Vss < V
IN
< Vcc
I
LO
Output Leakage Current
Vss < V
OUT
< Vcc, /CS = V
IH
or
/
OE
=
V
IH
or /WE = V
IL,
/
UB
=
/LB = V
IH
Icc
Operating Power Supply
/CS = V
IL
, V
IN
= V
IH
or V
IL,
Current
I
I/O =
0mA
I
CC1
Average Operating
Cycle Time=Min.100% duty,
Current
/CS = V
IL,
V
IN
= V
IH
or V
IL
, I
I/O =
0mA,
Cycle time = 1us,
/CS < 0.2V, V
IN
<0.2V, I
I/O =
0mA,
I
SB
Standby
Current
/CS = V
IH
or
(TTL Input)
/UB = /LB = V
IH,
V
IN
= V
IH
or V
IL
I
SB1
Standby Current
/CS > Vcc - 0.2V or
SL
(CMOS Input)
/UB = /LB > Vcc - 0.2V,
V
IN
> Vcc - 0.2V or
LL
V
IN
< Vss + 0.2V
V
OL
Output Low Voltage
I
OL
= 0.1mA
V
OH
Output High Voltage
I
OH =
-0.1mA
Notes :
1. Typical values are at Vcc = 1.8V, T
A
= 25°C
2. Typical values are sampled and not 100% tested
Min.
-1
-1
Typ.
-
-
Max.
1
1
Unit
uA
uA
-
-
-
-
3
20
3
mA
mA
mA
mA
uA
uA
V
V
-
-
-
-
1.6
-
-
0.5
-
-
0.15
1
3
0.2
-
CAPACITANCE
(Temp = 25°C, f= 1.0MHz)
Symbol
Parameter
C
IN
Input Capacitance(Add, /CS, /WE, /UB, /LB, /OE)
C
OUT
Output Capacitance(I/O)
Note :
1. These parameters are sampled and not 100% tested
Condition
V
IN
= 0V
V
I/O
= 0V
Max.
8
10
Unit
pF
pF
Rev.05 /Dec. 2000
3
HY62SF16201A
AC CHARACTERISTICS
Vcc = 1.7V~2.3V, T
A
= 0°C to 70°C/ -40°C to 85°C(I), unless otherwise specified
-85
-10
Parameter
Symbol
#
Min. Max. Min. Max.
READ CYCLE
1
tRC
Read Cycle Time
85
-
100
-
2
tAA
Address Access Time
-
85
-
100
3
tACS
Chip Select Access Time
-
85
-
100
4
tOE
Output Enable to Output Valid
-
40
-
50
5
tBA
/LB, /UB Access Time
-
85
-
100
6
tCLZ
Chip Select to Output in Low Z
10
-
20
-
7
tOLZ
Output Enable to Output in Low Z
5
-
5
-
8
tBLZ
/LB, /UB Enable to Output in Low Z
5
-
5
-
9
tCHZ
Chip Deselection to Output in High Z
0
30
0
30
10 tOHZ
Out Disable to Output in High Z
0
30
0
30
11 tBHZ
/LB, /UB Disable to Output in High Z
0
30
0
30
12 tOH
Output Hold from Address Change
10
-
15
-
WRITE CYCLE
13 tWC
Write Cycle Time
85
-
100
-
14 tCW
Chip Selection to End of Write
70
-
80
-
15 tAW
Address Valid to End of Write
70
-
80
-
16 tBW
/LB, /UB Valid to End of Write
70
-
80
-
17 tAS
Address Set-up Time
0
-
0
-
18 tWP
Write Pulse Width
55
-
75
-
19 tWR
Write Recovery Time
0
-
0
-
20 tWHZ
Write to Output in High Z
0
30
0
35
21 tDW
Data to Write Time Overlap
35
-
45
-
22 tDH
Data Hold from Write Time
0
-
0
-
23 tOW
Output Active from End of Write
5
-
10
-
-12
Min.
Max.
120
-
-
-
-
20
10
10
0
0
0
15
120
100
100
100
0
85
0
0
50
0
10
-
120
120
60
120
-
-
-
40
40
40
-
-
-
-
-
-
-
-
40
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC TEST CONDITIONS
T
A
= 0°C to 70°C (Normal) /-40°C to 85°C (I), unless otherwise specified
Parameter
Value
Input Pulse Level
0.4V to 1.6V
Input Rise and Fall Time
5ns
Input and Output Timing Reference Level
0.9V
Output Load tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW
CL = 5pF + 1TTL Load
Others
CL = 30pF + 1TTL Load
AC TEST LOADS
V
TM
= 1.7V
4091 Ohm
D
OUT
CL(1)
3273 Ohm
Note :
1. Including jig and scope capacitance
Rev.05 /Dec. 2000
4
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