HY628400 Series
512Kx8bit CMOS SRAM
DESCRIPTION
The HY628400 is a high-speed, low power and
4M bits CMOS SRAM organized as 524,288
words by 8 bits. The HY628400 uses Hyundai's
high performance twin tub CMOS process
technology and was designed for high-speed and
low power circuit technology. It is particulary well
suited for use in high-density and low power
system applications. This device has a data
retention mode that guarantees data to remain
valid at the minimum power supply voltage of
2.0V.
Product
Voltage
Speed
Operation
No.
(V)
(ns)
Current(mA)
HY628400
5.0
55/70/85
10
Note 1. Normal : Normal Temperature
2. Current value are max.
FEATURES
•
•
•
•
Fully static operation and Tri-state outputs
TTL compatible inputs and outputs
Low power consumption
Battery backup(L/LL-part)
- 2.0V(min) data retention
•
Standard pin configuration
- 32pin 525mil SOP
- 32pin 400mil TSOP-II
(Standard and Reversed)
Standby Current(uA)
L
LL
100
30
Temperature
(°C)
0~70(Normal)
PIN CONNECTION
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
A17
/WE
A13
A8
A9
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
A17
/WE
A13
A8
A9
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
Vcc
A15
A17
/WE
A13
A8
A9
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
SOP
TSOP-II(Standard)
TSOP-II(Reversed)
PIN DESCRIPTION
Pin Name
/CS
/WE
/OE
A0 ~ A18
I/O1 ~ I/O8
Vcc
Vss
Pin Function
Chip Select
Write Enable
Output Enable
Address Input
Data Input/Output
Power(5.0V)
Ground
BLOCK DIAGRAM
A0
ADD INPUT BUFFER
COLUMN DECODER
SENSE AMP
ROW DECODER
I/O1
OUTPUT BUFFER
I/O8
A18
CONTROL
LOGIC
/CS
/OE
/WE
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.04 /Jan.99
Hyundai Semiconductor
WRITE DRIVER
MEMORY ARRAY
1024x4096
HY628400 Series
ORDERING INFORMATION
Part No.
HY628400LG
HY628400LLG
HY628400LT2
HY628400LLT2
HY628400LR2
HY628400LLR2
Speed
55/70/85
55/70/85
55/70/85
55/70/85
55/70/85
55/70/85
Power
L-part
LL-part
L-part
LL-part
L-part
LL-part
Temp
Package
SOP
SOP
TSOP-II(Standard)
TSOP-II(Standard)
TSOP-II(Reversed)
TSOP-II(Reversed)
ABSOLUTE MAXIMUM RATING (1)
Symbol
Vcc, V
IN,
V
OUT
T
A
T
STG
P
D
T
SOLDER
Parameter
Power Supply, Input/Output Voltage
Operating Temperature
Storage Temperature
Power Dissipation
Lead Soldering Temperature & Time
Rating
-0.5 to 7.0
0 to 70
-65 to 125
1.0
260
•
10
Unit
V
°C
°C
W
°C•sec
Remark
HY628400
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliablity.
RECOMMENDED DC OPERATING CONDITION
T
A
=0°C to 70°C (Normal)
Symbol
Parameter
Vcc
Supply Voltage
Vss
Ground
V
IH
Input High Voltage
V
IL
Input Low Voltage
Min.
4.5
0
2.2
-0.5
(1)
Typ.
5.0
0
-
-
Max.
5.5
0
Vcc+0.5
0.8
Unit
V
V
V
V
Note :
1. V
IL
= -3.0V for pulse width less than 30ns
TRUTH TABLE
/CS1
H
L
L
L
/WE
X
H
H
L
/OE
X
H
L
X
MODE
Standby
Output Disabled
Read
Write
I/O OPERATION
High-Z
High-Z
Data Out
Data In
Note :
1. H=V
IH
, L=V
IL
, X=don't care
Rev.04/Jan99
2
HY628400 Series
DC ELECTRICAL CHARACTERISTICS
Vcc = 5.0V
±10%,
T
A
= 0°C to 70°C (Normal) unless otherwise specified
Symbol
Parameter
Test Condition
I
LI
I
LO
Icc
I
CC1
Input Leakage Current
Output Leakage Current
Operating Power Supply
Current
Average Operating Current
Vss < V
IN
< Vcc
Vss < V
OUT
< Vcc, /CS = V
IH
or
or
/
OE
=
V
IH
or /WE = V
IL
/CS = V
IL
,
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
/CS = V
IL
Min Duty Cycle = 100%, I
I/O =
0mA
/CS = V
IH
/CS > Vcc - 0.2V
I
OL
= 2.1mA
I
OH =
-1mA
L
LL
Min
.
-1
-1
-
-
Typ
.
-
-
5
50
Max
.
1
1
10
80
Unit
uA
uA
mA
mA
I
SB
I
SB1
V
OL
V
OH
TTL Standby Current
(TTL Input)
Standby Current HY628400
(CMOS Input)
Output Low Voltage
Output High Voltage
-
-
-
-
2.4
0.4
-
-
-
-
2
100
30
0.4
-
mA
uA
uA
V
V
Note : Typical values are at Vcc = 5.0V, T
A
= 25°C
ERISTICS
Vcc = 5.0V
±
10%, T
A
= 0°C to 70°C (Normal) unless otherwise specified
-55
-70
# Symbol
Parameter
Min.
Max. Min.
Max.
READ CYCLE
1
Trc
Read Cycle Time
55
-
70
-
2
TAA
Address Access Time
-
55
-
70
3
TACS
Chip Select Access Time
-
55
-
70
4
TOE
Output Enable to Output Valid
-
25
-
35
5
TCLZ
Chip Select to Output in Low Z
10
-
10
-
6
TOLZ
Output Enable to Output in Low Z
5
-
5
-
7
TCHZ
Chip Deselection to Output in High Z
0
20
0
25
8
TOHZ Out Disable to Output in High Z
0
20
0
25
9
tOH
Output Hold from Address Change
10
-
10
-
WRITE CYCLE
10 tWC
Write Cycle Time
55
-
70
-
11 tCW
Chip Selection to End of Write
45
-
60
-
12 tAW
Address Valid to End of Write
45
-
60
-
13 tAS
Address Set-up Time
0
-
0
-
14 tWP
Write Pulse Width
40
-
50
-
15 tWR
Write Recovery Time
0
-
0
-
16 tWHZ
Write to Output in High Z
0
20
0
25
17 tDW
Data to Write Time Overlap
25
-
30
-
18 tDH
Data Hold from Write Time
0
-
0
-
19 tOW
Output Active from End of Write
5
-
5
-
-85
Min
Max.
85
-
-
-
10
5
0
0
10
85
70
70
0
55
0
0
35
0
5
-
85
85
45
-
-
30
30
-
-
-
-
-
-
-
30
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Rev.04/Jan99
3
HY628400 Series
AC TEST CONDITIONS
T
A
= 0°C to 70°C (Normal) unless otherwise specified
PARAMETER
Value
Input Pulse Level
0.8V to 2.4V
Input Rise and Fall Time
5ns
Input and Output Timing Reference Level
1.5V
Output Load
CL = 100pF + 1TTL Load
AC TEST LOADS
TTL
CL(1)
Note : Including jig and scope capacitance
CAPACITANCE
Temp = 25°C, f= 1.0MHz
Symbol
Parameter
C
IN
Input Capacitance
C
OUT
Output Capacitance
Condition
V
IN
= 0V
V
I/O
= 0V
Max.
6
8
Unit
pF
pF
Note : This parameter is sampled and not 100% tested
Rev.04/Jan99
4
HY628400 Series
TIMING DIAGRAM
READ CYCLE 1
tRC
ADDR
tAA
OE
tOE
tOLZ
CS
tACS
tCLZ
Data
Out
High-Z
Data Valid
tOHZ
tCHZ
tOH
Note(READ CYCLE):
1. tCHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are
not referenced to output voltage levels
2. At any given temperature and voltage condition, tCHZ max. is less than tCLZ min. both for a given
device and from device to device.
3. /WE is high for the read cycle.
READ CYCLE 2
tRC
ADDR
tAA
tOH
Data
Out
Previous Data
Data Valid
tOH
Note(READ CYCLE):
1. /WE is high for the read cycle.
2. Device is continuously selected /CS = V
IL
3. /OE =V
IL
.
Rev.04/Jan99
5
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