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1N5820

产品描述RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小231KB,共2页
制造商SY
官网地址http://www.shunyegroup.com/
下载文档 详细参数 选型对比 全文预览

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1N5820概述

RECTIFIER DIODE

整流二极管

1N5820规格参数

参数名称属性值
状态ACTIVE
二极管类型RECTIFIER DIODE

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1N5820 THRU 1N5822
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage -
20 to 40 Volts
DO-201AD
Forward Current -
3.0 Amperes
FEATURES
1.0 (25.4)
MIN.
0.210(5.3)
0.190 (4.8)
DIA.
0.375 (9.50)
0.285(7.20)
1.0 (25.4)
MIN.
0.052(1.32)
0.048(1.22)
DIA.
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Metal silicon junction,majority carrier conduction
Guardring for overvoltage protection
Low power loss,high erriciency
High current capability,low forward voltage drop
High surge capability
For use in low voltage,high frequency inverters,
free wheeling,and polarity protection applications
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case:
JEDEC DO-201AD molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.04
ounce, 1.10 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for current capacitive load derate by 20%.
SYMBOLS
1N5820
1N5821
1N5822
UNITS
VOLTS
VOLTS
VOLTS
Amps
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
L
=95 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
3.0
40
28
40
I
FSM
V
F
I
R
C
J
R
q
JA
T
J
,
T
STG
0.475
80.0
0.500
2.0
40.0
300.0
40.0
-65 to +125
0.525
Amps
Volts
mA
pF
C/W
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
www.shunyegroup.com

1N5820相似产品对比

1N5820 1N5821 1N5822
描述 RECTIFIER DIODE RECTIFIER DIODE, DO-201AD 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201
状态 ACTIVE - ACTIVE
二极管类型 RECTIFIER DIODE - 整流二极管

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