1N4148
SMALL SIGNAL SWITCHING DIODE
DO-34(GLASS)
DO-35(GLASS)
FEATURES
Silicon epitaxial planar diode
Switching diodes
500mw power dissipation
High temperature soldering guaranteed
250 C/10 seconds,0.375
”
(9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 2(26.0)
MIN.
0.079(2.0)
MAX
0.079(2.0)
MAX
1.0 2(26.0)
MIN.
0.106 (2.9)
MAX
0.165 (4.2)
MAX
MECHANICAL DATA
1.0 2(26.0)
MIN.
0.017(0.42)
TYP
0.020(0.52)
TYP
1.0 2(26.0)
MIN.
Case:
DO-34\DO-35 glass sealed envelope.
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.003
ounce, 0.09 grams(DO-34)
0.005 ounce, 0.14 grams(DO-35)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
V
RRM
V
RMS
I
(AV)
1N4148
100
75
150
UNITS
VOLTS
VOLTS
mAmps
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=25 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 10mA
Maximum DC reverse current
T
A
=25 C V
R
=75V
at rated DC blocking voltage
T
A
=100 C V
R
=20V
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
I
FSM
V
F
I
R
t
rr
C
J
T
J
,
T
STG
500
1.0
5.0
50
4.0
4.0
-65 to +200
mAmps
Volts
u
A
ns
pF
C
Operating junction and storage temperature range
NOTES:
1.Test condition:I
F
=10mA,I
R
=10mA,I
rr
=1mA,V
R
=6V,R
L
=100W.
2.Measured at 1.0 MHz and applied reverse voltage of 4.0 volts
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RATINGS AND CHARACTERISTIC CURVES 1N4148
FIG. 1-ADMISSIBLE POWER DISSIPATION
VERSUS AMBIENT TEMPERATURE
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
800
700
600
500
400
300
200
100
0
0
100
200 C
FIG. 2-REVERSE CURRENT VERSUS CONTINUOUS
REVERSE VOLTAGE (TYPICAL VALUES)
1
P,POWER DISSIPATION,MILLIWATTS
0.1
0.01
0.001
TJ=25 C
AMBIENT TEMPERATURE, C
0.0001
40
60
80
100
120
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 3-FORWARD CHARACTERISTICS
16
INSTANTANEOUS FORWARD
CURRENT,MILLIAMPERES
FIG. 4-RELATIVE CAPACTANCE VERSUS
REVERSE VOLTAGE
C
tot(
v
R
)
RELATIVE CAPACTANCE
C
tot(
0
v
)
14
12
10
8
6
4
2
0
0
1
2V
1.2
1.0
0.8
0.6
INSTANTANEOUS FORWARD VOLEAGE,
VOLTS
0.4
0
5
10V
REVERSE VOLTAGE,VOLTS.
FIG. 5-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
I
FRM,
PEAK FORWARD CURRENT,AMPERES
100
n=tp/T
V=tp/T T=1/fp
tp
10
I
FRM
n=0
0.1
0.2
T
1
0.5
0.1
0.01
0.1
1
10
100
1000ms
tp,PULSE DURATION,ms
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