CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
PNP Digital Silicon Transistor
VOL TA GE 50 Vo l t s
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
CHDTA125TKPT
CURRENT 100 m A m p er e
FEATURE
* Small surface mounting type. (SC-59/SOT-346)
* High current gain.
* Suitable for high packing density.
*
*
*
*
Low colloector-emitter saturation.
High saturation current capability.
Internal isolated PNP transistors in one package.
Built in bias resistor(R1=200kΩ, Typ. )
SC-59/SOT-346
(2)
(3)
0.95
2.7~3.1
0.95
(1)
1.7~2.1
CONSTRUCTION
* One PNP transistors and bias of thin-film resistors in one
package.
0.3~0.51
1.2~1.9
MARKING
TK7
E
B
2
1
0.89~1.3
0.085~0.2
0.3~0.6
2.1~2.95
0~0.1
CIRCUIT
TR
R1
3
C
Dimensions in millimeters
SC-59/SOT-346
LIMITING VALUES
In accordance with the Absolute Maximum Rating System .
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
T
J
Rθ
J-S
Note
1. Transistor mounted on an FR4 printed-circuit board.
2003-12
PARAMETER
Coll ector -Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Coll ector current
Collector Power dissipation
Storage temperature
Junction temperature
Thermal resistance , Note 1
CONDITIONS
-50
-50
-5
VALUE
V
V
V
mA
UNIT
-100
T
amb
≤
25
O
C, Note 1
200
−55 ∼ +150
−55 ∼ +150
junction - soldering point
140
mW
O
C
O
C
C/W
O
RATING CHARACTERISTIC ( CHDTA125TKPT )
CHARA CTERISTICS
T
amb
= 25
°C
unless otherwise speciÞed.
SY MBOL
BV
CBO
BV
CEO
BV
EBO
V
CE(sat)
I
CBO
I
EBO
h
FE
R
1
f
T
PARAMETER
Collector-Base breakdown voltage
Emitter-Base breakdown voltage
CONDITIONS
I
C
= -50uA
I
E
= -50uA
MIN.
-50.0
-50.0
−
−
−
−
−
−
250
200
250
TY P .
−
−
−
-0.3
-0.5
-0.5
600
260
−
KΩ
MHz
MAX.
V
V
V
V
uA
uA
UNIT
Collector-Emitter breakdown voltage I
C
= -1mA
-5.0
Collector-Emitter Saturation voltage I
C
= -0.5mA; I
B
= -0.05mA
−
Collector-Base current
Emitter-Base current
DC current gain
Input resistor
Transition frequency
V
CB
= -50V
V
EB
= -4V
I
C
= -1mA; V
CE
= -5.0V
I
E
=5mA, V
CE
= -10.0V
f=100MHz
=
−
−
100
140
−
Not e
1.Pulse test: tp≤300uS;
δ ≤
0.02.
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