HCS125MS
September 1995
Radiation Hardened
Quad Buffer, Three-State
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14, LEAD FINISH C
TOP VIEW
OE1 1
A1 2
Y1 3
OE2 4
A2 5
Y2 6
GND 7
14 VCC
13 OE4
12 A4
11 Y4
10 OE3
9 A3
8 Y3
Features
•
•
•
•
•
•
•
•
•
•
•
3 Micron Radiation Hardened SOS CMOS
Total Dose 200K RAD (Si)
SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/Bit-Day
(Typ)
Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
Dose Rate Upset >10
10
RAD (Si)/s, 20ns Pulse
Latch-Up Free Under Any Conditions
Military Temperature Range: -55
o
C to +125
o
C
Significant Power Reduction Compared to LSTTL ICs
DC Operating Voltage Range: 4.5V to 5.5V
Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
Input Current Levels Ii
≤
5µA at VOL, VOH
•
Description
The Intersil HCS125MS is a Radiation Hardened quad three-state
buffer, each having its own output enable input. A high level on the
enable input puts the output in a high impedance state.
The HCS125MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS125MS is supplied in a 14 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
OE1
A1
Y1
OE2
A2
Y2
GND
14 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP3-F14, LEAD FINISH C
TOP VIEW
1
2
3
4
5
6
7
14
13
12
11
10
9
8
VCC
OE4
A4
Y4
OE3
A3
Y3
Ordering Information
PART
NUMBER
HCS125DMSR
TEMPERATURE
RANGE
-55
o
C
to
+125
o
C
SCREENING
LEVEL
Intersil Class
S Equivalent
Intersil Class
S Equivalent
Sample
PACKAGE
Functional Diagram
An
P
n
Yn
14 Lead SBDIP
OEn
HCS125KMSR
-55
o
C
to
+125
o
C
14 Lead Ceramic
Flatpack
14 Lead SBDIP
TRUTH TABLE
INPUTS
An
H
L
X
OEn
L
L
H
OUTPUT
Yn
H
L
Z
HCS125D/
Sample
HCS125K/
Sample
HCS125HMSR
+25
o
C
+25
o
C
Sample
14 Lead Ceramic
Flatpack
Die
+25
o
C
Die
L = Low, H = High, X = Don’t Care, Z = High Impedance
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Spec Number
File Number
123
518831
3559.1
Specifications HCS125MS
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output.
. . . . . . . . . . . . . . . . . . . . . .±35mA
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
(All Voltage Reference to the VSS Terminal)
Reliability Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
SBDIP Package. . . . . . . . . . . . . . . . . . . .
74
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . . 116
o
C/W
30
o
C/W
o
C Ambient
Maximum Package Power Dissipation at +125
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/
o
C
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Supply Voltage Range . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Time at 4.5V VCC (tr, tf) . . . . . . . 100ns/V Max.
Operating Temperature Range . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . .0V to 30% of VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
1
2, 3
Output Current
(Source)
IOH
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V, (Note 2)
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V,
(Note 2)
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOH = -50µA
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50µA
Output Voltage Low
VOL
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOL = 50µA
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOL = 50µA
Input Leakage
Current
IIN
VCC = 5.5V,
VIN = VCC or GND
1
2, 3
1
2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
-7.2
-6.0
7.2
6.0
VCC
-0.1
VCC
-0.1
-
MAX
40
750
-
-
-
-
-
UNITS
µA
µA
mA
mA
mA
mA
V
PARAMETER
Supply Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
Output Current
(Sink)
IOL
Output Voltage High
VOH
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
0.1
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
1
2, 3
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
-
-
-
-
-
±0.5
±5.0
±1.0
±50
-
µA
µA
µA
µA
V
Three-State Output
Leakage Current
IOZ
VCC = 5.5V, Force Voltage
= 0V or VCC
1
2, 3
Noise Immunity
Functional Test
NOTES:
FN
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, (Note 3)
7, 8A, 8B
1. All voltages reference to device GND.
2. Force/Measure functions may be interchanged.
3. For functional tests, VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
124
518831
Specifications HCS125MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
9
10, 11
Enable Delay
OE toY
TPZL
TPZH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
10, 11
Disable Delay
OE toY
TPLZ
TPHZ
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
10, 11
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns.
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2
2
2
2
2
2
MAX
21
25
25
30
25
30
UNITS
ns
ns
ns
ns
ns
ns
PARAMETER
Propagation Delay
Input to Y
SYMBOL
TPHL
TPLH
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
SYMBOL
CPD
CONDITIONS
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
NOTES
1
1
Input Capacitance
CIN
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
1
1
Output Capacitance
COUT
VCC = 5.0V, VIH = 5.0V,
VIL = 0V, f = 1MHz
1
1
Output Transition
Time
TTHL
TTLH
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
1
1
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-
-
-
-
1
1
1
1
MAX
60
90
10
10
20
20
15
22
UNITS
pF
pF
pF
pF
pF
pF
ns
ns
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
PARAMETER
Supply Current
Output Current
(Source)
Output Current (Sink)
SYMBOL
ICC
IOH
(NOTE 1)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = VIH = 4.5V,
VOUT = VCC -0.4V, VIL = 0
VCC = VIH = 4.5V,
VOUT = 0.4V, VIL = 0
TEMPERATURE
+25
o
C
+25
o
C
MIN
-
-6.0
MAX
0.75
-
UNITS
mA
mA
IOL
+25
o
C
6.0
-
mA
Spec Number
125
518831
Specifications HCS125MS
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
200K RAD
LIMITS
PARAMETER
Output Voltage High
SYMBOL
VOH
(NOTE 1)
CONDITIONS
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOH = -50µA
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50µA
Output Voltage Low
VOL
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOL = 50µA
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOL = 50µA
Input Leakage Current
Three-State Output
Leakage Current
Noise Immunity
Functional Test
Propagation Delay
Input to Y
Enable Delay
OE to Y
Disable Delay
OE to Y
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
IIN
IOZ
VCC = 5.5V, VIN = VCC or GND
VCC = 5.5V, Force Voltage
= 0V or VCC
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, (Note 2)
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
TEMPERATURE
+25
o
C
MIN
VCC
-0.1
VCC
-0.1
-
MAX
-
UNITS
V
+25
o
C
-
V
+25
o
C
0.1
V
+25
o
C
-
0.1
V
+25
o
C
+25
o
C
-
-
±5
±50
µA
µA
FN
+25
o
C
-
-
V
TPHL
TPLH
TPZL
TPZH
TPLZ
TPHZ
+25
o
C
2
25
ns
+25
o
C
2
30
ns
+25
o
C
2
30
ns
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
GROUP B
SUBGROUP
5
5
5
PARAMETER
ICC
IOL/IOH
IOZ
DELTA LIMIT
+12µA
−15%
of 0 Hour
±200nA
Spec Number
126
518831
Specifications HCS125MS
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
Initial Test (Preburn-In)
Interim Test
I
(Postburn-In)
Interim Test
II
(Postburn-In)
PDA
Interim Test
III
(Postburn-In)
PDA
Final Test
Group A (Note 1)
Group B
Subgroup B-5
Subgroup B-6
Group D
NOTE:
1. Alternate group A testing in accordance with Method 5005 of Mil-Std-883 may be exercised.
METHOD
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
Sample/5005
Sample/5005
Sample/5005
Sample/5005
GROUP A SUBGROUPS
1, 7, 9
1, 7, 9
1, 7, 9
1, 7, 9, Deltas
1, 7, 9
1, 7, 9, Deltas
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
1, 7, 9
1, 7, 9
Subgroups 1, 2, 3, 9, 10, 11
ICC, IOL/H, IOZL/H
READ AND RECORD
ICC, IOL/H, IOZL/H
ICC, IOL/H, IOZL/H
ICC, IOL/H, IOZL/H
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE
GROUPS
Group E Subgroup 2
NOTE:
1. Except FN test which will be performed 100% go/no-go.
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS
OSCILLATOR
OPEN
STATIC I BURN-IN (Note 1)
3, 6, 8, 11
STATIC II BURN-IN (Note 1)
3, 6, 8, 11
DYNAMIC BURN-IN (Note 2)
-
NOTES:
1. Each pin except VCC and GND will have a series resistor of 10K
±
5%.
2. Each pin except VCC and GND will have a series resistor of 1K
±
5%.
7
3, 6, 8, 11
14
1, 2, 4, 5, 9,
10, 12, 13
-
7
-
1, 2, 4, 5, 9,
10, 12, 13, 14
-
-
1, 2, 4, 5, 7, 9, 10,
12, 13
-
14
-
-
GROUND
1/2 VCC = 3V
±
0.5V
VCC = 6V
±
0.5V
50kHz
25kHz
TEST
METHOD
5005
PRE RAD
1, 7, 9
POST RAD
Table 4
READ AND RECORD
PRE RAD
1, 9
POST RAD
Table 4 (Note 1)
TABLE 9. IRRADIATION TEST CONNECTIONS
OPEN
3, 6, 8, 11
GROUND
7
VCC = 5V
±
0.5V
1, 2, 4, 5, 9, 10, 12, 13, 14
NOTE: Each pin except VCC and GND will have a resistor of 47KΩ
±
5% for irradiation testing. Group E,
Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number
127
518831
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