S E M I C O N D U C T O R
HGTG24N60D1
24A, 600V N-Channel IGBT
Package
JEDEC STYLE TO-247
EMITTER
COLLECTOR
GATE
COLLECTOR
(BOTTOM SIDE
METAL)
May 1995
Features
• 24A, 600V
• Latch Free Operation
• Typical Fall Time <500ns
• High Input Impedance
• Low Conduction Loss
Description
The IGBT is a MOS gated high voltage switching device
combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25
o
C and +150
o
C.
IGBTs are ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential, such as: AC and DC motor controls, power sup-
plies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY
PART NUMBER
HGTG24N60D1
PACKAGE
TO-247
BRAND
G24N60D1
E
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specific
HGTG24N60D1
600
600
40
24
96
±25
60A at 0.8 BV
CES
125
1.0
-55 to +150
260
UNITS
V
V
A
A
A
V
-
W
W/
o
C
o
C
o
C
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector-Gate Voltage R
GE
= 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CGR
Collector Current Continuous at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
at V
GE
= 15V at T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . I
C90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Switching Safe Operating Area at T
J
= +150
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(0.125 inch from case for 5s)
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
©
Harris Corporation 1995
File Number
2831.3
3-103
Specifications HGTG24N60D1
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
LIMITS
PARAMETERS
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Voltage
SYMBOL
BV
CES
I
CES
TEST CONDITIONS
I
C
= 250µA, V
GE
= 0V
V
CE
= BV
CES
V
CE
= 0.8 BV
CES
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
= I
C90
,
V
GE
= 15V
I
C
= 250µA,
V
CE
= V
GE
V
GE
=
±20V
I
C
= I
C90
, V
CE
= 0.5 BV
CES
I
C
= I
C90
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
V
GE
= 20V
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-Off Energy (Note 1)
Thermal Resistance
t
D(ON)I
t
RI
t
D(OFF)I
t
FI
W
OFF
R
θJC
L = 500µH, I
C
= I
C90
, R
G
= 25Ω,
V
GE
= 15V, T
J
= +150
o
C,
V
CE
= 0.8 BV
CES
T
C
= +25
o
C
T
C
= +125
o
C
T
C
= +25
o
C
T
C
= +125
o
C
T
C
= +25
o
C
MIN
600
-
-
-
-
3.0
TYP
-
-
-
1.7
1.9
4.5
MAX
-
1.0
4.0
2.3
2.5
6.0
±500
-
155
200
-
-
900
600
-
1.00
UNITS
V
mA
mA
V
V
V
Gate-Emitter Threshold Voltage
V
GE(TH)
Gate-Emitter Leakage Current
Gate-Emitter Plateau Voltage
On-State Gate Charge
I
GES
V
GEP
Q
G(ON)
-
-
-
-
-
-
-
-
-
-
-
6.3
120
155
100
150
700
450
4.3
-
nA
V
nC
nC
ns
ns
ns
ns
mJ
o
C/W
NOTE: 1. Turn-Off Energy Loss (W
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A) The HGTG24N60D1 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
40
I
CE
, COLLECTOR-EMITTER CURRENT (A)
I
CE
, COLLECTOR-EMITTER CURRENT (A)
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
CE
= 15V
30
40
35
30
25
20
15
10
5
0
0
2
4
6
8
10
0
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
1
2
3
4
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
V
GE
= 15V
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, T
C
= +25
o
C
V
GE
= 10V
V
GE
= 7.0V
V
GE
= 6.5V
20
T
C
= +150
o
C
10
T
C
= +25
o
C
T
C
= -40
o
C
0
V
GE
= 6.0V
V
GE
= 5.5V
V
GE
= 5.0V
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
3-104
HGTG24N60D1
Typical Performance Curves
(Continued)
1000
50
V
GE
= 15V
I
CE
, DC COLLECTOR CURRENT (A)
40
t
FI
, FALL TIME (ns)
900
800
700
600
500
400
300
200
100
0
+25
+50
+75
+100
+125
+150
T
C
, CASE TEMPERATURE (
o
C)
0
1
10
I
CE
, COLLECTOR-EMITTER CURRENT (A)
40
V
CE
= 480V, V
GE
= 10V AND 15V,
T
J
= +150
o
C, R
G
= 25Ω, L = 500µH
30
20
10
FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE
6000
f = 1MHz
5000
C, CAPACITANCE (pF)
4000
FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT
600
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
10
V
GE
, GATE-EMITTER VOLTAGE (V)
450
V
CC
= BV
CES
V
CC
= BV
CES
7.5
3000
C
ISS
300
0.75 BV
CES
0.75 BV
CES
0.50 BV
CES
0.50 BV
CES
0.25 BV
CES
0.25 BV
CES
R
L
= 30Ω
I
G(REF)
= 1.83mA
V
GE
= 10V
5
2000
C
OSS
C
RSS
0
0
5
10
15
20
25
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
150
2.5
1000
0
I
G(REF)
20
I
G(ACT)
TIME (µs)
80
I
G(REF)
I
G(ACT)
0
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT (REFER TO APPLICATION
NOTES AN7254 AND AN7260)
7.00
W
OFF
, TURN-OFF SWITCHING LOSS (mJ)
3
V
CE(ON)
, SATURATION VOLTAGE (V)
+150
o
C
V
GE
= 10V
2
T
J
=
T
J
= +150
o
C, R
G
= 25Ω,
L = 500µH
V
CE
= 480V, V
GE
= 10V, 15V
1.00
V
CE
= 240V, V
GE
= 10V, 15V
V
GE
= 15V
1
0.10
0.05
0
1
10
I
CE
, COLLECTOR-EMITTER CURRENT (A)
40
1
10
I
CE
, COLLECTOR-EMITTER CURRENT (A)
40
FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOR-
EMITTER CURRENT
3-105
HGTG24N60D1
Typical Performance Curves
(Continued)
1300
f
OP
, OPERATING FREQUENCY (kHz)
1200
t
D(OFF)I
, TURN-OFF DELAY (ns)
1100
1000
T = +150
o
C
900
J
R
GE
= 25Ω
800 L = 500µH
700
600
500
400
300
1
10
I
CE
, COLLECTOR-EMITTER CURRENT (A)
40
V
CE
= 240V, V
GE
= 10V
V
CE
= 240V, V
GE
= 15V
V
CE
= 480V, V
GE
= 10V
V
CE
= 480V, V
GE
= 15V
80
T
J
= +150
o
C, T
C
= +100
o
C,
R
GE
= 25Ω, L = 500µH
10
f
MAX1
= 0.05/t
D(OFF)I
f
MAX2
= (P
D
- P
C
)/W
OFF
P
C
= DUTY FACTOR = 50%
R
θJC
= 1.0
o
C/W
V
CE
= 480V, V
GE
= 10V, 15V
V
CE
= 240V, V
GE
= 10V, 15V
1
1
NOTE:
P
D
= ALLOWABLE DISSIPATION
10
I
CE
, COLLECTOR-EMITTER CURRENT (A)
50
P
C
= CONDUCTION DISSIPATION
FIGURE 9. TURN-OFF DELAY vs COLLECTOR-EMITTER
CURRENT
FIGURE 10. OPERATING FREQUENCY vs COLLECTOR-
EMITTER CURRENT AND VOLTAGE
Operating Frequency Information
Operating frequency information for a typical device (Figure
10) is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (I
CE
) plots are possible using the information shown
for a typical unit in Figures 7, 8 and 9. The operating
frequency plot (Figure 10) of a typical device shows f
MAX1
or
f
MAX2
whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
f
MAX1
is defined by f
MAX1
= 0.05/t
D(OFF)I
. t
D(OFF)I
deadtime
(the denominator) has been arbitrarily held to 10% of the on-
state time for a 50% duty factor. Other definitions are possible.
t
D(OFF)I
is defined as the time between the 90% point of the
trailing edge of the input pulse and the point where the
collector current falls to 90% of its maximum value. Device
turn-off delay can establish an additional frequency limiting
condition for an application other than T
JMAX
. t
D(OFF)I
is
important when controlling output ripple under a lightly loaded
condition.
f
MAX2
is defined by f
MAX2
= (P
D
- P
C
)/W
OFF
. The allowable
dissipation (P
D
) is defined by P
D
= (T
JMAX
- T
C
)/R
θJC
. The sum
of device switching and conduction losses must not exceed P
D
.
A 50% duty factor was used (Figure 10) and the conduction
losses (P
C
) are approximated by P
C
= (V
CE
•
I
CE
)/2. W
OFF
is
defined as the integral of the instantaneous power loss starting
at the trailing edge of the input pulse and ending at the point
where the collector current equals zero (I
CE
= 0A).
The switching power loss (Figure 10) is defined as f
MAX2
•
W
OFF
.
Turn-on switching losses are not included because they can be
greatly influenced by external circuit conditions and components.
3-106
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