SS6610/11G
High-efficiency Synchronous
Step-up DC/DC Converter
PRODUCT SUMMARY
High efficiency boost converter
Output current up to 500mA
No external diode required
DESCRIPTION
The
SS6610/11G
are high-efficiency step-up
DC/DC converters,
with a
start-up voltage
as low
as 0.8V,
and an
operating voltage down to
0.7V.
Consuming only
20µA of quiescent
current,
these
devices
include
a built-in synchronous
rec-
tifier that reduces size and cost
by eliminating
the need for an external Schottky
diode, and
improves overall efficiency by
minimizing
losses.
The switching frequency can range up to
500KHz depending on the load and input volt-
age. The output voltage can be easily set by:
1) two external resistors for 1.8V to 5.5V;
2) connecting FB to OUT to get 3.3V;
or
3) connecting FB to GND to get 5.0V.
The peak current of the internal switch is fixed at 1A
(SS6610G) or 0.65A
(SS6611G)
for design flexibility.
FEATURES
Quiescent
supply current of 20mA.
Power-saving
shutdown mode
(0.1µA typical).
Internal
synchronous rectifier
On-chip
low-battery detector.
Low
battery hysteresis
Pb-free, RoHS compliant
MSOP-8
APPLICATIONS
Palmtop and notebook computers.
PDAs
Wireless phones
Pocket organizers.
Digital cameras.
Hand-held devices with 1 to 3 cells of
NiMH/NiCd batteries.
TYPICAL APPLICATION CIRCUIT
V
IN
+
47µF
OFF
SHDN
SS6610G
SS6611G
Low Battery
Detection
LBI
REF
0.1µF
GND
LX
OUT
22µH
Output 3.3V, 5.0V
or adjustable from 1.8V to 5.5V
+
47µF up to 300mA output
Low-battery
Detect Out
ON
LBO
FB
4/21/2006 Rev.3.01
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SS6610/11G
ORDERING INFORMATION
SS6610GO
TR
SS6611GO
TR
PIN CONFIGURATION
MSOP-8
TOP VIEW
Packing
TR: Tape
and reel
Package
type
GO: RoHS-compliant MSOP-8
FB
1
LBI 2
LBO 3
REF 4
8
7
6
5
OUT
LX
GND
SHDN
Example:
SS6610GO
TR
SS6610
in
RoHS-compliant MSOP-8
package,
shipped on
tape and reel
ABSOLUTE MAXIMUM RATINGS
Supply voltage (OUT to GND)
Switch voltage (LX to GND)
SHDN
, LBO to GND
8.0V
V
OUT
+ 0.3V
6.0V
V
OUT
+0.3V
-1.5A to +1.5A
-1.5A to +1.5A
-40°C ~ +85°C
-65°C ~150°C
LBI, REF, FB, to GND
Switch current (LX)
Output current (OUT)
Operating temperature range
Storage temperature range
TEST CIRCUIT
Refer to the
typical application circuit
on page 1.
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SS6610/11G
ELECTRICAL CHARACTERISTICS
(V
IN
= 2.0V, V
OUT
= 3.3V (FB = V
OUT
),R
L
=
∞
, unless otherwise specified.)
MIN.
TYP.
0.7
1.1
5.5
0.8
-2
1.1
PARAMETER
Minimum input voltage
Operating voltage
Start-up voltage
Start-up voltage temp. coeff.
Output voltage range
Output voltage
TEST CONDITIONS
MAX.
UNIT
V
V
V
mV/°C
R
L
=3kΩ (Note1)
V
IN
<V
OUT
FB = V
OUT
FB=OUT
SS6610G
SS6611G
SS6610G
SS6611G
1.8
3.17
300
150
180
90
1.199
3.3
350
300
5.5
3.43
V
Steady-state output current
(Note 2)
(V
OUT
=3.3V)
FB=GND
(
V
OUT
mA
230
160
1.23
0.024
I
REF
= 0 to 100µA
V
OUT
= 1.8V to 5.5V
1.199
I
LX
= 100mA
SS6610G
LX switch current limit
SS6611G
LX leakage current
Operating current into OUT
(Note 3)
Shutdown current into OUT
V
FB
= 1.4V , V
OUT
= 3.3V
20
35
V
LX
=0V~4V; V
OUT
=5.5V
0.50
0.65
0.05
0.85
1
µA
µA
µ
A
0.80
10
5
1.23
0.3
1.0
30
10
1.261
0.6
1.25
A
1.261
V
mV/°C
mV
mV/V
V
Ω
=5.0V)
Reference voltage
Reference voltage temp.
coeff.
Reference load regulation
Reference line regulation
FB , LBI input threshold
Internal switch on-resistance
I
REF
= 0
SHDN = GND
V
OUT
= 3.3V ,I
LOAD
= 200mA
V
OUT
= 2V ,I
LOAD
= 1mA
0.1
90
1
Efficiency
%
85
4/21/2006 Rev.3.01
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SS6610/11G
ELECTRICAL CHARACTERISTICS
(Continued)
PARAMETER
LX switch on-time
LX switch off-time
FB input current
LBI input current
SHDN input current
LBO low output voltage
LBO off leakage current
TEST CONDITIONS
V
FB
=1V , V
OUT
= 3.3V
V
FB
=1V , V
OUT
= 3.3V
V
FB
= 1.4V
V
LBI
= 1.4V
V
SHDN
MIN.
2
0.6
TYP.
4
0.9
0.03
1
0.07
0.2
MAX.
7
1.4
50
50
50
0.4
UNIT
µ
s
µs
nA
nA
nA
µ
A
= 0 or V
OUT
V
LBI
= 0, I
SINK
= 1mA
V
LBO
= 5.5V, V
LBI
= 5.5V
0.07
50
1
µΑ
mV
LBI hystereisis
V
IL
SHDN input voltage
V
IH
0.8V
OUT
0.2V
OUT
V
Note 1:
Start-up voltage operation is guaranteed without the addition of an external Schottky diode between the
input and output.
Note 2:
Steady-state output current indicates that the device maintains output voltage regulation under load.
Note 3:
Device is bootstrapped (power to the IC comes from OUT). This correlates directly with the actual
battery supply.
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SS6610/11G
TYPICAL PERFORMANCE CHARACTERISTICS
160
140
0.4
120
100
80
60
40
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.5
Input Battery Current (µA)
V
OUT
=5V (FB=GND)
Shutdown Current
(µA)
0.3
0.2
0.1
V
OUT
=3.3V (FB=OUT)
Input battery voltage (V)
No-Load Battery Current vs. Input Battery
0.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Supply Voltage (V)
Fig. 1
1.8
1.6
Fig. 2
CCM/DCM Boundary Output Current
(mA)
400
350
300
250
200
150
100
50
0
0.5
Shutdown Current vs. Supply Voltage
Start-Up Voltage (V)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.01
V
OUT
=5.0V (FB=GND)
L=22µH
C
IN
=100µF
C
OUT
=100µF
V
OUT
=3.3V (FB=OUT)
V
OUT
=5.0V (FB=GND)
V
OUT
=3.3V (FB=OUT)
0.1
1
10
100
Output Current (mA)
Fig. 3
100
90
80
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Input Voltage (V)
Start-Up Voltage vs. Output Current
220
200
180
Fig. 4
Turning Point between CCM & DCM
SS6610 (I
LIMIT
=1A)
Ripple Voltage
(mV)
Efficiency (%)
70
60
50
40
30
20
10
0
0.01
0.1
V
IN
=1.2V
V
IN
=2.4V
V
IN
=3.6V
V
OUT
=5.0V (FB=GND)
SS6610 (I
LIMIT
=1A)
1
10
100
1000
160
140
120
100
80
60
40
20
0
0
50
100
150
200
250
300
350
400
450
500
550
600
650
V
IN
=3.6V
V
IN
=2.4V
V
IN
=1.2V
V
OUT
=5.0V
L=22µH
C
IN
=47µF
C
OUT
=47µF
Output Current (mA)
Output Current (mA)
Fig. 5
Efficiency vs. Load Current (ref. to Fig.33)
Fig. 6
Ripple Voltage (ref. to Fig.33)
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