SS12 thru SS115
Schottky Barrier Rectifiers
PRODUCT SUMMARY
1.0AMP Surface Mount
SMA/DO-214AC
FEATURES
For surface mounted application
Easy pick and place
Metal to silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low VF
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
High temperature soldering:
260
o
C / 10 seconds at terminals
Dimensions in inches and (millimeters)
MECANICAL DATA
Case: JEDEC SMA/DO-214AC Molded plastic
Terminals: Pure tin plated, lead free
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.066 gram
Pb-free; RoHS-compliant
12/12/2007 Rev.1.00
www.SiliconStandard.com
1
SS12 thru SS115
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
L
(See Fig. 1)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
o
(Note 1)
IF= 1.0A @ 25 C
o
@ 100 C
o
Maximum DC Reverse Current
@ T
A
=25
C at
o
Rated DC Blocking Voltage
@ T
A
=125
C
Maximum DC Reverse Current at VR=33V
o
&
T
A
=50
C
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance ( Note 2 )
Symbol SS
12
20
V
RRM
14
V
RMS
20
V
DC
I
(AV)
I
FSM
V
F
I
R
HT
IR
Cj
SS
13
30
21
30
SS
14
40
28
40
SS
15
50
35
50
SS
16
60
42
60
SS
19
90
63
90
SS
110
100
70
100
SS
Units
115
150
V
105
V
150
V
A
A
1.0
30
0.5
0.4
0.4
10
-
50
28
88
5.0
0.75
0.65
0.80
0.95
0.70
0.85
0.1
2.0
5.0
V
mA
mA
uA
pF
o
R
ΘJL
R
θJA
Operating Temperature Range
T
J
-65 to +125
-65 to +150
Storage Temperature Range
T
STG
-65 to +150
Notes:
1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.2” x 0.2” (5.0mm x 5.0mm) Copper Pad Areas.
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
C/W
o
o
C
C
12/12/2007 Rev.1.00
www.SiliconStandard.com
2
SS12 thru SS115
RATINGS AND CHARACTERISTIC CURVES
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
1.0
50
RESISTIVE OR
INDUCTIVE LOAD
SS12- SS14
SS15-SS115
0.5
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
AVERAGE FORWARD CURRENT. (A)
40
AT RATED TL
8.3ms Single Half Sine Wave
JEDEC Method
30
20
10
PCB MOUNTED ON 0.2X0.2"
(5.0X5.0mm) COPPER PAD AREAS
0
50
60
70
80
90
100
110
120
130
o
0
140
150
160
170
1
LEAD TEMPERATURE. ( C)
10
NUMBER OF CYCLES AT 60Hz
100
FIG.3- TYPICAL FORWARD CHARACTERISTICS
100
50
FIG.4- TYPICAL REVERSE CHARACTERISTICS
SS12-SS14
SS15-SS115
INSTANTANEOUS REVERSE CURRENT. (mA)
SS19-SS110
10
SS15-SS16
INSTANTANEOUS FORWARD CURRENT. (A)
10
SS12-SS14
Tj=125
0
C
1
1
SS115
0.1
Tj=75
0
C
0.1
0.01
Tj=25 C
O
PULSE WIDTH=300 S
1% DUTY CYCLE
0.01
0
.2
.4
.6
.8
1.0
1.2
1.4
1.6
FORWARD VOLTAGE. (V)
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL JUNCTION CAPACITANCE
TRANSIENT THERMAL IMPEDANCE. (
O
C/W)
400
Tj=25
0
C
f=1.0MHz
Vsig=50mVp-p
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
100
JUNCTION CAPACITANCE.(pF)
100
SS12-SS14
SS15-SS16
SS19-SS115
10
1
10
0.1
1.0
10
100
0.1
0.01
0.1
1
10
T, PULSE DURATION. (sec)
100
REVERSE VOLTAGE. (V)
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
12/12/2007 Rev.1.00
www.SiliconStandard.com
3
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