SS12L thru SS115L
Schottky Barrier Rectifiers
PRODUCT SUMMARY
1.0 Amp. Surface Mount
FEATURES
For surface mounted application
Low-Profile Package
Ideal for automated pick & place
Low power loss, high efficiency
High current capability, low VF
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
o
High temperature soldering: 260
C
/ 10 seconds at
terminals
Sub SMA
MECHANICAL DATA
Cases: Sub SMA plastic case
Terminal : Pure tin plated, lead free.
Polarity: Color band denotes cathode end
Packaging: 12mm tape per EIA STD RS-481
Weight approx. 15mg
Dimensions in inches and (millimeters)
Pb-free; RoHS-compliant
08/22/2007 Rev.1.00
www.SiliconStandard.com
1
SS12L thru SS115L
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%
Symbol
SS
12L
Maximum Recurrent
Peak
Reverse
Voltage
V
20
RRM
Maximum RMS Voltage
14
V
RMS
Maximum DC Blocking Voltage
20
V
DC
o
Type Number
SS
13L
30
21
30
SS
14L
40
28
40
SS
15L
50
35
50
SS
16L
60
42
60
SS SS
SS
Units
19L 110L 115L
90 100 150
V
63
70 105
V
90 100 150
V
A
A
0.65
0.80
0.75
0.90
Marking Code (Note 2)
Maximum Average Forward Rectified
Current
Peak Forward Surge Current, 8.3 ms
Single Half Sine-wave Superimposed on
Rated Load (JEDEC method )
Maximum Instantaneous Forward Voltage
(Note 1)
@ 0.5A
@ 1.0A
Maximum DC Reverse Current
@ T
A
=25
o
C at Rated DC Blocking
Voltage @ T
A
=100
o
C
Maximum Thermal Resistance (Note 3)
12LYM 13LYM 14LYM 15LYM 16LYM 19LYM 10LYM A5LYM
I
(AV)
I
FSM
V
F
I
R
0.385 0.43
0.45 0.50
0.51
0.55
1.0
30
0.58
0.70
V
mA
mA
o
8.0
0.4
6.0
0.05
0.5
R
θJA
100
45
R
θJL
Operating Temperature Range
T
J
-55 to +150
Storage Temperature Range
T
STG
-55 to + 150
Notes:
1. Pulse Test with PW=300 usec, 1% Duty Cycle.
2. 12LYM: 1-1A, 2-20V, L-Low Profile, Y-Year Code, M-Month Code.
3. Measured on P.C.Board with 0.2” x 0.2” (5.0mm x 5.0mm) Copper Pad Areas.
C/W
o
o
C
C
08/22/2007 Rev.1.00
www.SiliconStandard.com
2
SS12L thru SS115L
RATINGS AND CHARACTERISTIC CURVES
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
1.2
100
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
AVERAGE FORWARD CURRENT. (A)
50
1.0
0.8
20
10
5
0.6
0.4
0.2
2
8.3ms Single
Half Sine Wave
Tj=Tj max
1
2
5
10
20
NUMBER OF CYCLES AT 60Hz
50
100
0
0
20
40
60
80
100
o
120
140
160
1
LEAD TEMPERATURE. ( C)
FIG.3- TYPICAL FORWARD CHARACTERISTICS
100
50
SS15L-SS16L
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.2
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
SS19L-SS110L
SS13L-SS14L
10,000
FIG.4- TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT. ( A)
INSTANTANEOUS FORWARD CURRENT. (A)
1,000
T
J
= 10
0 C
O
SS12L
T
J
= 75
O
C
100
SS115L
10
T
J
=
O
25 C
1
0
20
40
60
80
100
120
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
140
FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE
100
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
100
50
20
TRANSIENT THERMAL IMPEDANCE. (
O
C/W)
1000
JUNCTION CAPACITANCE. (pF)
Tj=25
O
C
f=1.0MHz
Vsig=50mVp-p
10
10
5
1
2
1
0.1
1.0
10
REVERSE VOLTAGE. (V)
100
0.1
0.01
0.1
1
10
T, PULSE DURATION. (sec)
100
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
08/22/2007 Rev.1.00
www.SiliconStandard.com
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