This product complies with the RoHS Directive (EU 2002/95/EC).
LNJ312W83RA1
Hight Bright Surface Mounting Chip LED
TSS Type
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Power dissipation
Forward current
Reverse voltage
Pulse forward current
*
Symbol
P
D
I
F
I
FP
Rating
55
20
60
4
Unit
mW
mA
mA
V
°C
°C
Lighting Color
Yellow Green
Storage temperature
T
stg
Note) *: The condition of I
FP
is duty 10%, Pulse width 1 msec.
Electro-Optical Characteristics
T
a
= 25°C±3°C
Parameter
Symbol
I
O
I
R
Luminous intensity
*1
Reverse current
Forward voltage
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Relative luminous intensity
b
n.p
(%)
pe pe
ct
ou
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on
.
–40 to +100
Conditions
Min
6.4
Typ
Max
32.4
100
2.5
I
F
= 10 mA
V
R
= 4 V
12.0
2.0
I
F
= 10 mA
I
F
= 10 mA
I
F
= 10 mA
I
F
= 10 mA
575
15
567
572
575
I
F
V
F
10
3
10
2
1.6
1.8
2.0
2.2
2.4
10
−20
0
20
40
60
M
ain
Di
sc te
on na
tin nc
ue e/
d
V
R
Operating ambient temperature
T
opr
–30 to +85
V
F
λ
P
λ
d
Peak emission wavelength
Spectral half band width
Dominant emission wavelength
*2
Δλ
Note) *1: Measurement tolerance:
±20%
*2: Measurement tolerance:
±3
nm
10
2
Unit
mcd
µA
V
nm
nm
nm
I
O
I
F
Luminous intensity I
O
(mcd)
/D
isc
10
Forward current I
F
(mA)
1
10
−1
Ma
int
en
an
ce
on
1
10
10
2
tin
ue
10
1
di
10
2
Relative luminous intensity
T
a
80
100
Relative luminous intensity
λ
P
Relative luminous intensity (%)
100
80
60
50°
40
60°
70°
80°
500
550
600
650
90°
100
80
60
40
20
Pl
Forward current I
F
(mA)
Forward voltage V
F
(V)
Ambient temperature T
a
(°C)
30
I
F
T
a
Directive characteristics
30°
40°
20°
10°
0°
80°
60°
40°
20°
0
20
40
60
80
10°
20°
30°
40°
50°
60°
70°
Forward current I
F
(mA)
20
10
20
0
80°
90°
100
0
0
20
40
60
80
100
Peak emission wavelength
λ
P
(nm)
Publication date: October 2011
Relative luminous intensity (%)
Ver. CEK
Ambient temperature T
a
(°C)
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Consult our sales staff in advance for information on the following applications:
–
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
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20100202
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int
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an
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M
ain
Di
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.