SMBJ Series
Transient Voltage Suppressors
PRODUCT SUMMARY
Stand-off Voltage ratings from 5.0V to 440V
Peak pulse power 600W in SMB surface-mount package
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Low profile package with built-in strain relief for surface-mount
Glass passivated junction
Low incremental surge resistance, excellent clamping capability
Peak pulse power capability of 600W with a 10/1000us waveform,
repetition rate (duty cycle): 0.01%
Very fast response time
High temperature soldering guaranteed:
260°C for 10 seconds at terminals
MECHANICAL DATA
Case: JEDEC DO-214AA (SMB) molded plastic over passivated chip
Terminals: Matte-Sn plated, solderable per MIL-STD-750,
Method 2026
Polarity: For uni-directional types the band denotes the cathode, which
is positive with respect to the anode under normal TVS operation.
Mounting position: Any
Weight: 0.003oz., 0.093g
Pb-free; RoHS-compliant
Devices for Bidirectional Applications
For bi-directional devices, use suffix CA (e.g. SMBJ10CA). Electrical characteristics apply in both directions.
MAXIMUM RATINGS
Rating at 25°C ambient temperature unless otherwise specified.
Parameter
Peak pulse power dissipation with
a 10/1000
u
s waveform
(1,2)
(see Fig. 1)
Peak pulse current with a 10/1000
u
s waveform
(1)
Peak forward surge current, 8.3ms single half sine-wave
uni-directional only
(2)
Typical thermal resistance, junction to ambient
(3)
Typical thermal resistance, junction to lead
Operating junction and storage temperature range
Symbol
P
PPM
I
PPM
I
FSM
R
θ
JA
R
θ
JL
T
J
, T
STG
Value
Minimum 600
See Next Table
100
100
20
-55 to +150
Unit
W
A
A
°C/W
°C/W
°C
Notes:
1. Non-repetitive current pulse, per Fig. 3 and derated above T
A
=25°C per Fig. 2.
2. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads at each terminal
3. Mounted on minimum recommended pad layout
9/21/2006 Rev.4.01
www.SiliconStandard.com
1 of 4
SMBJ Series
ELECTRICAL PARAMETERS
At 25°C ambient temperature unless otherwise specified. V
F
=3.5V at I
F
=25A (uni-directional only)
Device marking
co d e
Device Type
SMBJ5.0
SMBJ5.0A
SMBJ6.0
SMBJ6.0A
SMBJ6.5
SMBJ6.5A
SMBJ7.0
SMBJ7.0A
SMBJ7.5
SMBJ7.5A
SMBJ8.0
SMBJ8.0A
SMBJ8.5
SMBJ8.5A
SMBJ9.0
SMBJ9.0A
SMBJ10
SMBJ10A
SMBJ11
SMBJ11A
SMBJ12
SMBJ12A
SMBJ13
SMBJ13A
SMBJ14
SMBJ14A
SMBJ15
SMBJ15A
SMBJ16
SMBJ16A
SMBJ17
SMBJ17A
SMBJ18
SMBJ18A
SMBJ20
SMBJ20A
SMBJ22
SMBJ22A
SMBJ24
SMBJ24A
SMBJ26
SMBJ26A
SMBJ28
SMBJ28A
SMBJ30
SMBJ30A
(5)
Breakdow n voltage
V
(BR)
(Volts)
(1)
Min.
6.40
6.40
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
Max.
7.82
7.07
8.15
7.37
8.82
7.98
9.51
8.60
10.2
9.21
10.9
9.83
11.5
10.4
12.2
11.1
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
UNI
KD
KE
KF
KG
KH
KK
KL
KM
KN
KP
KQ
KR
KS
KT
KU
KV
KW
KX
KY
KZ
LD
LE
LF
LG
LH
LK
LL
LM
LN
LP
LQ
LR
LS
LT
LU
LV
LW
LX
LY
LZ
MD
ME
MF
MG
MH
MK
BI
AD
AE
AF
AG
AH
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
AY
AZ
BD
BE
BF
BG
BH
BK
BL
BM
BN
BP
BQ
BR
BS
BT
BU
BV
BW
BX
BY
BZ
CD
CE
CF
CG
CH
CK
Test
current
at I
T
(mA)
10
10
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
voltage
V
WM
(Volts)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
Maximum
reverse
leakage
at V
WM
I
D(3)
(uA)
800
800
800
800
500
500
200
200
100
100
50
50
20
20
10
10
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
peak pulse
surge
current
I
PPM(2)
(A)
62.5
65.2
52.6
58.3
48.8
53.6
45.1
50.0
42.0
46.5
40.0
44.1
37.7
41.7
35.5
39.0
31.9
35.3
29.9
33.0
27.3
30.2
25.2
27.9
23.3
25.9
22.3
24.6
20.8
23.1
19.7
21.7
18.6
20.5
16.8
18.5
15.2
16.9
14.0
15.4
12.9
14.3
12.0
13.2
11.2
12.4
Maximum
clamping
voltage
at I
PPM
V
C
(Volts)
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
Notes:
1. V
(BR)
measured after I
T
applied for 300us square wave pulse or equivalent
2. Surge current waveform per Fig. 3 and derate per Fig. 2
3. For bi-directional types having V
WM
of 10 Volts and less, the I
D
limit is doubled
4. All terms and symbols are consistent with ANSI/IEEE C62.35
5. For the bidirectional SMBJ5.0CA, the maximum V
(BR)
is 7.25V.
9/21/2006 Rev.4.01
www.SiliconStandard.com
2 of 4
SMBJ Series
ELECTRICAL PARAMETERS
At 25°C ambient temperature unless otherwise specified. V
F
=3.5V at I
F
=25A (uni-directional only)
Breakdow n voltage
V
(BR)
(Volts)
(1)
Min.
36.7
36.7
40.0
40.0
44.4
44.4
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
201
224
246
279
335
391
447
492
Max.
44.9
40.6
48.9
44.2
54.3
49.1
58.4
52.8
61.1
55.3
65.1
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86.0
102
92.1
106
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
209
222
247
272
309
371
432
494
543
Maximum
reverse
leakage
at V
WM
I
D(3)
(uA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
peak pulse
surge
current
I
PPM(2)
(A)
10.2
11.3
9.3
10.3
8.4
9.3
7.8
8.6
7.5
8.3
7.0
7.8
6.6
7.3
6.2
6.9
5.8
6.4
5.6
6.2
5.3
5.8
4.8
5.3
4.5
5.0
4.3
4.8
4.0
4.4
3.8
4.1
3.4
3.7
3.1
3.4
2.8
3.1
2.6
2.9
2.2
2.5
2.1
2.3
2.0
2.2
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.9
Maximum
clamping
voltage
at I
PPM
V
C
(Volts)
59.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
268
243
287
259
304
275
292
324
356
405
486
567
648
713
Device marking
co d e
Device type
SMBJ33
SMBJ33A
SMBJ36
SMBJ36A
SMBJ40
SMBJ40A
SMBJ43
SMBJ43A
SMBJ45
SMBJ45A
SMBJ48
SMBJ48A
SMBJ51
SMBJ51A
SMBJ54
SMBJ54A
SMBJ58
SMBJ58A
SMBJ60
SMBJ60A
SMBJ64
SMBJ64A
SMBJ70
SMBJ70A
SMBJ75
SMBJ75A
SMBJ78
SMBJ78A
SMBJ85
SMBJ85A
SMBJ90
SMBJ90A
SMBJ100
SMBJ100A
SMBJ110
SMBJ110A
SMBJ120
SMBJ120A
SMBJ130
SMBJ130A
SMBJ150
SMBJ150A
SMBJ160
SMBJ160A
SMBJ170
SMBJ170A
SMBJ180A
SMBJ200A
SMBJ220A
SMBJ250A
SMBJ300A
SMBJ350A
SMBJ400A
SMBJ440A
UNI
ML
MM
MN
MP
MQ
MR
MS
MT
MU
MV
MW
MX
MY
MZ
ND
NE
NF
NG
NH
NK
NL
NM
NN
NP
NQ
NR
NS
NT
NU
NV
NW
NX
NY
NZ
PD
PE
PF
PG
PH
PK
PL
PM
PN
PP
PQ
PR
PT
PV
PX
PZ
QE
QG
QK
QM
BI
CL
CM
CN
CP
CQ
CR
CS
CT
CU
CV
CW
CX
CY
CZ
DD
DE
DF
DG
DH
DK
DL
DM
DN
DP
DQ
DR
DS
DT
DU
DV
DW
DX
DY
DZ
FD
FE
FF
FG
FH
FK
FL
FM
FN
FP
FQ
FR
FT
FV
FX
FZ
GE
GG
GK
GM
Test
current
at I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
voltage
V
WM
(Volts)
33
33
36
36
40
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
180
200
220
250
300
350
400
440
Notes:
1. V
(BR)
measured after I
T
applied for 300us square wave pulse or equivalent
2. Surge current waveform per Fig. 3 and derate per Fig. 2
3. For bi-directional types having V
WM
of 10 Volts and less, the I
D
limit is doubled
4. All terms and symbols are consistent with ANSI/IEEE C62.35
5. For parts without A, the V
BR
is +10%
9/21/2006 Rev.4.01
www.SiliconStandard.com
3 of 4
SMBJ Series
RATINGS AND CHARACTERISTIC CURVES
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
9/21/2006 Rev.4.01
www.SiliconStandard.com
4 of 4
电子竞赛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
