SMAJ Series
Transient Voltage Suppressors
PRODUCT SUMMARY
Stand-off Voltage ratings from 5.0V to 440V
Peak pulse power 400W in SMA surface-mount package
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Optimized for LAN protection applications
Ideal for ESD protection of data lines in accordance with
IEC 1000-4-2 (IEC801-2)
Ideal for EFT protection of data lines in accordance with
IEC 1000-4-4 (IEC801-4)
Low profile package with built-in strain relief for surface-mount
Glass passivated junction
Low incremental surge resistance, excellent clamping capability
Peak pulse power capability of 400W with a 10/1000us waveform,
repetition rate (duty cycle): 0.01% (300W above 78V)
Very fast response time
High temperature soldering guaranteed:
260°C for 10 seconds at terminals
MECHANICAL DATA
Case: JEDEC DO-214AC (SMA) molded plastic over passivated chip
Terminals: Matte-Sn plated, solderable per MIL-STD-750,
Method 2026
Polarity: For uni-directional types the band denotes the cathode, which
is positive with respect to the anode under normal TVS operation.
Mounting position: Any
Weight: 0.002oz., 0.064g
Pb-free; RoHS-compliant
Devices for Bidirectional Applications
For bi-directional devices, use suffix CA (e.g. SMAJ10CA). Electrical characteristics apply in both directions.
MAXIMUM RATINGS
Rating at 25°C ambient temperature unless otherwise specified.
Parameter
Peak pulse power dissipation with
a 10/1000
u
s waveform
(1,2)
(see Fig. 1)
Peak pulse current with a 10/1000
u
s waveform
(1)
Peak forward surge current, 8.3ms single half sine-wave
uni-directional only
(2)
Typical thermal resistance, junction to ambient
(3)
Typical thermal resistance, junction to lead
Operating junction and storage temperature range
Symbol
P
PPM
I
PPM
I
FSM
R
θ
JA
R
θ
JL
T
J
, T
STG
Value
400
See Next Table
40
120
30
-55 to +150
o
Unit
W
A
A
C/W
C/W
o
o
C
Notes:
1. Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2. Rating is 300W above 78V
2. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads at each terminal
3. Mounted on minimum recommended pad layout
9/21/2006 Rev.4.01
www.SiliconStandard.com
1 of 4
SMAJ Series
ELECTRICAL PARAMETERS
At 25°C ambient temperature unless otherwise specified. V
F
=3.5V at I
F
=25A (uni-directional only)
Device
marking
co d e
Device type
SMAJ5.0
SMAJ5.0A
SMAJ6.0
SMAJ6.0A
SMAJ6.5
SMAJ6.5A
SMAJ7.0
SMAJ7.0A
SMAJ7.5
SMAJ7.5A
SMAJ8.0
SMAJ8.0A
SMAJ8.5
SMAJ8.5A
SMAJ9.0
SMAJ9.0A
SMAJ10
SMAJ10A
SMAJ11
SMAJ11A
SMAJ12
SMAJ12A
SMAJ13
SMAJ13A
SMAJ14
SMAJ14A
SMAJ15
SMAJ15A
SMAJ16
SMAJ16A
SMAJ17
SMAJ17A
SMAJ18
SMAJ18A
SMAJ20
SMAJ20A
SMAJ22
SMAJ22A
SMAJ24
SMAJ24A
SMAJ26
SMAJ26A
SMAJ28
SMAJ28A
SMAJ30
SMAJ30A
(5)
Breakdow n voltage
V
(BR)
(Volts)
(1)
Min.
6.40
6.40
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
Max.
7.82
7.07
8.15
7.37
8.82
7.98
9.51
8.60
10.2
9.21
10.9
9.83
11.5
10.4
12.2
11.1
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
UNI
AD
AE
AF
AG
AH
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
AY
AZ
BD
BE
BF
BG
BH
BK
BL
BM
BN
BP
BQ
BR
BS
BT
BU
BV
BW
BX
BY
BZ
CD
CE
CF
CG
CH
CK
BI
WD
WE
WF
WG
WH
WK
WL
WM
WN
WP
WQ
WR
WS
WT
WU
WV
WW
WX
WY
WZ
XD
XE
XF
XG
XH
XK
XL
XM
XN
XP
XQ
XR
XS
XT
XU
XV
XW
XX
XY
XZ
YD
YE
YF
YG
YH
YK
Test
current
at I
T
(mA)
10
10
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
voltage
V
WM
(Volts)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
Maximum
reverse
leakage
at V
WM
I
D(3)
(uA)
800
800
800
800
500
500
200
200
100
100
50
50
10
10
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
peak pulse
surge
current
I
PPM(2)
(A)
41.7
43.5
35.1
38.8
32.5
35.7
30.1
33.3
28.0
31.0
26.7
29.4
25.2
27.8
23.7
26.0
21.3
23.5
19.9
22.0
18.2
20.1
16.8
18.6
15.5
17.2
14.9
16.4
13.9
15.4
13.1
14.5
12.4
13.7
11.2
12.3
10.2
11.3
9.3
10.3
8.6
9.5
8.0
8.8
7.5
8.3
Maximum
clamping
voltage
at I
PPM
V
C
(Volts)
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
Notes:
1. V
(BR)
measured after I
T
applied for 300us square wave pulse or equivalent
2. Surge current waveform per Fig. 3 and derate per Fig. 2
3. For bi-directional types having V
WM
of 10 Volts and less, the I
D
limit is doubled
4. All terms and symbols are consistent with ANSI/IEEE C62.35
5. For the bidirectional SMAJ5.0CA, the maximum V
(BR)
is 7.25V.
9/21/2006 Rev.4.01
www.SiliconStandard.com
2 of 4
SMAJ Series
ELECTRICAL PARAMETERS
At 25°C ambient temperature unless otherwise specified. V
F
=3.5V at I
F
=25A (uni-directional only)
Device
marking
co d e
Device type
SMAJ33
SMAJ33A
SMAJ36
SMAJ36A
SMAJ40
SMAJ40A
SMAJ43
SMAJ43A
SMAJ45
SMAJ45A
SMAJ48
SMAJ48A
SMAJ51
SMAJ51A
SMAJ54
SMAJ54A
SMAJ58
SMAJ58A
SMAJ60
SMAJ60A
SMAJ64
SMAJ64A
SMAJ70
SMAJ70A
SMAJ75
SMAJ75A
SMAJ78
SMAJ78A
SMAJ85
SMAJ85A
SMAJ90
SMAJ90A
SMAJ100
SMAJ100A
SMAJ110
SMAJ110A
SMAJ120
SMAJ120A
SMAJ130
SMAJ130A
SMAJ150
SMAJ150A
SMAJ160
SMAJ160A
SMAJ170
SMAJ170A
SMAJ180A
SMAJ200A
SMAJ220A
SMAJ250A
SMAJ300A
SMAJ350A
SMAJ400A
SMAJ440A
UNI
CL
CM
CN
CP
CQ
CR
CS
CT
CU
CV
CW
CX
CY
CZ
RD
RE
RF
RG
RH
RK
RL
RM
RN
RP
RQ
RR
RS
RT
RU
RV
RW
RX
RY
RZ
SD
SE
SF
SG
SH
SK
SL
SM
SN
SP
SQ
SR
ST
SV
SX
SZ
TE
TG
TK
TM
BI
YL
YM
YN
YP
YQ
YR
YS
YT
YU
YV
YW
YX
YY
YZ
ZD
ZE
ZF
ZG
ZH
ZK
ZL
ZM
ZN
ZP
ZQ
ZR
ZS
ZT
ZU
ZV
ZW
ZX
ZY
ZZ
VD
VE
VF
VG
VH
VK
VL
VM
VN
VP
VQ
VR
VT
VV
VX
VZ
UE
UG
UK
UM
Breakdow n voltage
V
(BR)
(Volts)
(1)
Min.
36.7
36.7
40.0
40.0
44.4
44.4
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
201
224
246
279
335
391
447
492
Max.
44.9
40.6
48.9
44.2
54.3
49.1
58.4
52.8
61.1
55.3
65.1
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86.0
102
92.1
106
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
209
222
247
272
309
371
432
494
543
Test
current
at I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
voltage
V
WM
(Volts)
33
33
36
36
40
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
180
200
220
250
300
350
400
440
Maximum
reverse
leakage
at V
WM
I
D(3)
(uA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
peak pulse
surge
current
I
PPM(2)
(A)
6.8
7.5
6.2
6.9
5.6
6.2
5.2
5.8
5.0
5.5
4.7
5.2
4.4
4.9
4.2
4.6
3.9
4.3
3.7
4.1
3.5
3.9
3.2
3.5
3.0
3.3
2.9
3.2
2.0
2.2
1.9
2.1
1.7
1.9
1.5
1.7
1.4
1.6
1.3
1.4
1.1
1.2
1.0
1.2
0.99
1.09
1.4
1.2
1.1
1.0
0.8
0.7
0.6
0.6
Maximum
clamping
voltage
at I
PPM
V
C
(Volts)
59.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
268
243
287
259
304
275
292
324
356
405
486
567
648
713
Notes:
1. V
(BR)
measured after I
T
applied for 300us square wave pulse or equivalent
2. Surge current waveform per Fig. 3 and derate per Fig. 2
3. For bi-directional types having V
WM
of 10 Volts and less, the I
D
limit is doubled
4. All terms and symbols are consistent with ANSI/IEEE C62.35
5. For parts without A, the V
BR
is +10%
9/21/2006 Rev.4.01
www.SiliconStandard.com
3 of 4
SMAJ Series
RATINGS AND CHARACTERISTIC CURVES
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
9/21/2006 Rev.4.01
www.SiliconStandard.com
4 of 4
实时操作系统RTOS
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
