SOT-23-3L Plastic-Encapsulate Transistors
MMBTA94
FEATURES
Power dissipation
P
CM
:
0.35
W (Tamb=25℃)
SOT-23-3L
TRANSISTOR (PNP)
1.
BASE
2.
EMITTER
3.
COLLECTOR
1.02
Collector current
I
CM:
-0.2
A
Collector-base voltage
V
(BR)CBO
:
-400
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V (BR)
CBO
V (BR)
CEO
V (BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
DC current gain
h
FE(3)
h
FE(4)
V
CE
(sat)
Collector-emitter saturation voltage
V
CE
(sat)
Base-emitter saturation voltage
Transition frequency
V
BE
(sat)
f
T
I
C
=-50 mA, I
B
=-5mA
I
C
=-10 mA, I
B
= -1 mA
V
CE
=-20V, I
C
=-10mA
f =30MHz
50
V
CE
=-10V, I
C
=-100 mA
V
CE
=-10V, I
C
=-50 mA
I
C
=-10 mA, I
B
=-1mA
40
40
0.95±0.025
2.80±0.05
1.60±0.05
unless
Test
otherwise
specified)
TYP
MAX
UNIT
V
V
V
-0.1
-5
-0.1
µA
µA
µA
conditions
MIN
-400
-400
-5
Ic= -100µA, I
E
=0
I
C
= -1mA, I
B
=0
I
E
=-100µA,I
C
=0
V
CB
=-400V, I
E
=0
V
CE
=-400V, I
B
=0
V
EB
= -4V, I
C
=0
V
CE
=-10V, I
C
=-10 mA
V
CE
=-10V, I
C
=-1mA
80
70
300
-0.2
-0.3
-0.75
0.35
V
V
V
MHz
MARKING
4D
2.92±0.05
1.9
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