Datasheet> 器件分类 > 分立半导体> 二极管> JAN1N4150-1

JAN1N4150-1: 产品描述Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35, SIMILAR TO DO-7, 2 PIN; 产品类别分立半导体二极管; 文件大小35KB，共2页; 制造商Compensated Devices Inc

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JAN1N4150-1概述

Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35, SIMILAR TO DO-7, 2 PIN

JAN1N4150-1规格参数

参数名称	属性值
厂商名称	Compensated Devices Inc
包装说明	SIMILAR TO DO-7, 2 PIN
Reach Compliance Code	unknown
其他特性	METALLURGICALLY BONDED
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JEDEC-95代码	DO-35
JESD-30 代码	O-XALF-W2
元件数量	1
端子数量	2
最大输出电流	0.2 A
封装主体材料	UNSPECIFIED
封装形状	ROUND
封装形式	LONG FORM
认证状态	Not Qualified
参考标准	MIL-19500/231H
最大反向恢复时间	0.004 µs
表面贴装	NO
端子形式	WIRE
端子位置	AXIAL

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• 1N4150-1 AVAILABLE IN

JAN, JANTX,

AND

JANTXV

PER MIL-PRF-19500/231

• 1N3600 AVAILABLE IN

JAN, JANTX,

AND

JANTXV

PER MIL-PRF-19500/231

• SWITCHING DIODES

• HERMETICALLY SEALED

• METALLURGICALLY BONDED

• DOUBLE PLUG CONSTRUCTION

1N4150

and

1N4150-1

and

1N3600

MAXIMUM RATINGS

Junction Temperature: -65°C to +175°C

Storage Temperature: -65°C to +175°C

Operating Current: 300 mA @ TA = +25°C

Derating: 2.0 mA dc/°C Above TL = + 75°C @ L = 3/8”

Forward Surge Current: 4A, (tp = 1µs); 0.5A (tp = 1s)

ELECTRICAL CHARACTERISTICS

@ 25°C, unless otherwise speciﬁed.

Type

V BR

V RWM

I R1

VR = 50 V dc

IR = 10 µA

V dc

1N3600

1N4150,-1

V (pk)

TA = 25°C

µA dc

0.1

1 R2

VR = 50 V dc

TA = 150°C

µA dc

100

VR = 0; f = 1 Mhz;

ac signals = 50 mV (p-p)

2.5

trr

IF = IR = 10 to 100 mAdc

RL = 100 ohms

FIGURE 1

FORWARD VOLTAGE LIMITS – ALL TYPES

V F1

Limits

I F = 1 mA dc

V F2

I F = 10 mA dc

V F3

I F = 50 mA dc

(Pulsed)

V dc

0.760

0.860

V F4

I F = 100 mA dc

(Pulsed)

V dc

0.820

0.920

V F5

I F = 200 mA dc

(Pulsed)

V dc

0.870

1.000

DESIGN DATA

CASE:

Hermetically sealed

glass case per MIL-S-19500/231

D0-35 outline.

LEAD MATERIAL:

Copper clad steel.

LEAD FINISH:

Tin / Lead

THERMAL RESISTANCE:

(ROJL):

250 ˚C/W maximum at L = .375

THERMAL IMPEDANCE: (Z

OJX): 70

˚C/W maximum

POLARITY:

Cathode end is banded.

MOUNTING POSITION:

Any.

V dc

minimum

maximum

0.540

0.620

V dc

0.660

0.740

22 COREY STREET, MELROSE, MASSACHUSETTS 02176

PHONE (781) 665-1071

FAX (781) 665-7379

WEBSITE: http://www.cdi-diodes.com

E-mail: mail@cdi-diodes.com

JAN1N4150-1相似产品对比

	JAN1N4150-1	JANTXV1N4150-1	JANTX1N3600	JANTX1N4150-1	JANTXV1N3600	JAN1N3600
描述	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35, SIMILAR TO DO-7, 2 PIN	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35, SIMILAR TO DO-7, 2 PIN	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35, SIMILAR TO DO-7, 2 PIN	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35, SIMILAR TO DO-7, 2 PIN	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35, SIMILAR TO DO-7, 2 PIN	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35, SIMILAR TO DO-7, 2 PIN
厂商名称	Compensated Devices Inc	Compensated Devices Inc	Compensated Devices Inc	Compensated Devices Inc	Compensated Devices Inc	Compensated Devices Inc
包装说明	SIMILAR TO DO-7, 2 PIN	SIMILAR TO DO-7, 2 PIN	SIMILAR TO DO-7, 2 PIN	SIMILAR TO DO-7, 2 PIN	SIMILAR TO DO-7, 2 PIN	SIMILAR TO DO-7, 2 PIN
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
其他特性	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JEDEC-95代码	DO-35	DO-35	DO-35	DO-35	DO-35	DO-35
JESD-30 代码	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2	O-XALF-W2
元件数量	1	1	1	1	1	1
端子数量	2	2	2	2	2	2
最大输出电流	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
参考标准	MIL-19500/231H	MIL-19500/231H	MIL-19500/231H	MIL-19500/231H	MIL-19500/231H	MIL-19500/231H
最大反向恢复时间	0.004 µs	0.004 µs	0.004 µs	0.004 µs	0.004 µs	0.004 µs
表面贴装	NO	NO	NO	NO	NO	NO
端子形式	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL

JAN1N4150-1

JAN1N4150-1在线购买

JAN1N4150-1概述

JAN1N4150-1规格参数

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