PD - 97146A
IRLR8726PbF
IRLU8726PbF
HEXFET
®
Power MOSFET
Applications
l
High Frequency Synchronous Buck
V
DSS
R
DS(on)
max
Qg (typ.)
Converters for Computer Processor Power
30V 5.8m @V
GS
= 10V 15nC
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
D
D
for Telecom and Industrial Use
:
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
l
Lead-Free
l
RoHS compliant
G
D
S
G
D
S
D-Pak
IRLR8726PbF
G
D
I-Pak
IRLU8726PbF
S
Gate
Drain
Max.
30
± 20
86
Source
Units
V
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
h
Maximum Power Dissipation
h
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
f
61
f
340
75
38
A
W
W/°C
°C
0.5
-55 to + 175
300 (1.6mm from case)
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
h
Typ.
Max.
2.0
50
110
Units
°C/W
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
h
ghÃ
–––
–––
–––
Notes
through
are on page 11
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
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1
11/23/09
IRLR/U8726PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
73
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
20
4.0
5.8
1.80
-8.6
–––
–––
–––
–––
–––
15
3.7
1.9
5.7
3.7
7.6
10
2.0
12
49
15
16
2150
480
205
–––
–––
5.8
8.0
2.35
–––
1.0
150
100
-100
–––
23
–––
–––
–––
–––
–––
–––
3.5
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
pF
ns
nC
Ω
I
D
= 20A
R
G
= 1.8Ω
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 20A
S
nA
V
mV/°C
µA
V
Conditions
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 25A
V
GS
= 4.5V, I
D
e
= 20A
e
V
DS
= V
GS
, I
D
= 50µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 20A
See Fig. 15
V
DS
= 15V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
e
See Fig. 13
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Max.
120
20
Units
mJ
A
Avalanche Characteristics
E
AS
I
AR
Ã
d
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
24
52
86
f
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
T
J
= 25°C, I
F
= 20A, V
DD
= 15V
di/dt = 300A/µs
A
340
1.0
36
78
V
ns
nC
Ã
e
2
e
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IRLR/U8726PbF
1000
TOP
1000
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.7V
2.5V
TOP
100
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.7V
2.5V
10
10
1
≤
60µs PULSE WIDTH
Tj = 25°C
2.5V
2.5V
≤
60µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
ID = 25A
VGS = 10V
1.5
100
10
TJ = 175°C
TJ = 25°C
1
1.0
VDS = 15V
0.1
0.0
2.0
4.0
≤
60µs PULSE WIDTH
6.0
8.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRLR/U8726PbF
10000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
12
10
8
6
4
2
0
ID= 20A
VDS= 24V
VDS= 15V
C, Capacitance (pF)
Ciss
1000
Coss
Crss
100
1
10
100
0
4
8
12 16 20 24 28 32 36 40
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
10000
TJ = 175°C
ISD , Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100µsec
1msec
10msec
100
100
10
TJ = 25°C
10
1
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
TC= 25°C
TJ = 175°C
Single Pulse
0.1
0.1
1
10
100
VSD , Source-to-Drain Voltage (V)
VDS, Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRLR/U8726PbF
100
LIMITED BY PACKAGE
VGS(th) Gate threshold Voltage (V)
2.5
ID = 500µA
ID = 50µA
2.0
80
ID , Drain Current (A)
ID = 25µA
60
1.5
40
20
1.0
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0.5
-75 -50 -25
0
25
50
75
100 125 150 175
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Threshold Voltage vs. Temperature
10
Thermal Response ( ZthJC )
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
4
τ
1
τ
2
τ
3
τ
4
0.01
Ci=
τi/Ri
Ci i/Ri
Ri (°C/W)
τι
(sec)
0.014297 0.000003
0.373312 0.00009
1.010326 0.000973
0.602065 0.007272
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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