PD -97410
IRFH5300PbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
30
1.4
50
1.3
100
V
m
:
Q
g (typical)
R
G (typical)
I
D
nC
(@T
c(Bottom)
= 25°C)
h
:
A
PQFN 5X6 mm
Applications
•
OR-ing MOSFET for 12V (typical) Bus in-Rush Current
•
Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features
Benefits
Low R
DSon
(≤ 1.4mΩ)
Low Thermal Resistance to PCB (≤ 0.5°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
results in Increased Power Density
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Compatible with Existing Surface Mount Techniques
Environmentally Friendlier
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Increased Reliability
Orderable part number
IRFH5300TRPBF
IRFH5300TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@ T
C(Bottom)
= 25°C
T
J
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
30
± 20
40
32
100
100
400
3.6
250
Units
V
g
g
c
h
h
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
g
0.029
-55 to + 150
Notes
through
are on page 8
www.irf.com
1
9/17/09
IRFH5300PbF
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
190
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
1.1
1.7
1.8
-6.2
–––
–––
–––
–––
–––
120
50
12
6.5
16
16
23
30
1.3
26
30
31
13
7200
1360
590
Conditions
Max. Units
–––
V V
GS
= 0V, I
D
= 250μA
––– V/°C Reference to 25°C, I
D
= 1mA
1.4
V
GS
= 10V, I
D
= 50A
mΩ
V
GS
= 4.5V, I
D
= 50A
2.1
2.35
V
V
DS
= V
GS
, I
D
= 150μA
––– mV/°C
5.0
V
DS
= 24V, V
GS
= 0V
μA
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
150
V
GS
= 20V
100
nA
-100
V
GS
= -20V
–––
S V
DS
= 15V, I
D
= 50A
–––
nC V
GS
= 10V, V
DS
= 15V, I
D
= 50A
75
V
DS
= 15V
–––
–––
V
GS
= 4.5V
nC
–––
I
D
= 50A
–––
See Fig.17 & 18
–––
–––
nC V
DS
= 16V, V
GS
= 0V
e
e
–––
–––
–––
–––
–––
–––
–––
–––
Ω
ns
V
DD
= 15V, V
GS
= 4.5V
I
D
= 50A
R
G
=1.8Ω
See Fig.15
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
pF
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
d
Min.
–––
–––
–––
–––
Typ.
–––
–––
–––
34
Typ.
–––
–––
Max.
420
50
Units
mJ
A
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Max. Units
100
h
Conditions
MOSFET symbol
showing the
integral reverse
G
D
A
Ã
400
1.0
51
V
ns
–––
68
100
nC
Time is dominated by parasitic Inductance
p-n junction diode.
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
T
J
= 25°C, I
F
= 50A, V
DD
= 15V
di/dt = 200A/μs
S
e
eÃ
Thermal Resistance
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
f
f
Parameter
g
g
Typ.
–––
–––
–––
–––
Max.
0.5
15
35
21
Units
°C/W
2
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IRFH5300PbF
1000
TOP
1000
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
100
10
2.7V
≤
60μs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
2.7V
≤
60μs PULSE WIDTH
Tj = 150°C
10
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
2.0
Fig 2.
Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
ID = 50A
100
VGS = 10V
1.5
TJ = 150°C
10
1
TJ = 25°C
1.0
0.1
VDS = 15V
≤
60μs PULSE WIDTH
0.01
1.0
2.0
3.0
4.0
5.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
Fig 4.
Normalized On-Resistance Vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
ID= 50A
VDS= 24V
VDS= 15V
C, Capacitance (pF)
Ciss
Coss
1000
Crss
100
1
10
100
0
40
80
120
160
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.Gate-to-Source Voltage
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3
IRFH5300PbF
1000
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
TJ = 150°C
100μsec
100
10
10
1msec
TJ = 25°C
1
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1
1
10
100
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
350
300
ID, Drain Current (A)
VGS(th) Gate threshold Voltage (V)
3.0
Fig 8.
Maximum Safe Operating Area
ID = 1.0A
ID = 1.0mA
ID = 500μA
ID = 150μA
LIMITED BY PACKAGE
2.5
250
200
150
100
50
0
25
50
75
100
125
150
175
TC, Case Temperature (°C)
2.0
1.5
1.0
0.5
-75 -50 -25
0
25
50
75
100 125 150 175
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Case (Bottom) Temperature
1
Fig 10.
Threshold Voltage Vs. Temperature
Thermal Response ( ZthJC )
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFH5300PbF
(
RDS (on), Drain-to -Source On Resistance m
Ω)
EAS, Single Pulse Avalanche Energy (mJ)
6
2000
ID = 50A
5
1600
I D
TOP
15A
21A
BOTTOM
50A
4
1200
3
800
2
TJ = 125°C
1
400
TJ = 25°C
0
2
4
6
8
10
12
14
16
18
20
0
25
50
75
100
125
150
VGS, Gate-to-Source Voltage (V)
Starting TJ , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
I
AS
0.01
Ω
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
V
DS
V
GS
R
G
V10V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
R
D
90%
D.U.T.
+
V
DS
-
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
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5
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