PD - 96196
IRF8513PbF
HEXFET
®
Power MOSFET
Applications
l
Dual SO-8 MOSFET for POL
Converters in Notebook Computers, Servers,
Graphics Cards, Game Consoles
and Set-Top Box
Benefits
l
Low Gate Charge and Low R
DS(on)
l
Fully Characterized Avalanche Voltage
and Current
l
20V V
GS
Max. Gate Rating
l
100% Tested for R
G
l
Lead-Free (Qualified to 260°C Reflow)
l
RoHS Compliant (Halogen Free)
V
DSS
30V
R
DS(on)
max
Q1 15.5m @V
GS
= 10V
Q2 12.7m @V
GS
= 10V
:
:
I
D
8.0A
11A
B
9
T ÃÃ9!
T ÃÃ9!
T ÃÃ9!
SO-8
T!
T!
B!
Description
The IRF8513PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard
SO-8 package. The IRF8513PbF has been optimized for parameters that are critical in synchronous buck
operation
including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make
this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook
and Netcom applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Q1 Max.
30
± 20
8.0
6.2
64
1.5
1.05
0.01
Q2 Max.
Units
V
c
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
11
9.0
88
2.4
1.68
0.02
-55 to + 175
A
W
W/°C
°C
Thermal Resistance
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
g
Junction-to-Ambient
fg
Q1 Max.
42
100
Q2 Max.
42
62.5
Units
°C/W
Notes
through
are on page 11
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
www.irf.com
1
11/05/08
IRF8513PbF
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
∆ΒV
DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Q1&Q2
Q1
Q2
Q1
Q2
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Q1&Q2
Q1
Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min.
30
–––
–––
–––
–––
–––
–––
1.35
–––
–––
–––
–––
–––
–––
19
24
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.021
0.021
12.5
18.1
10.2
14.2
1.8
-6.5
-6.9
–––
–––
–––
–––
–––
–––
5.7
7.6
1.2
1.7
0.68
1.0
2.2
3.1
1.6
1.9
2.9
4.0
3.9
5.2
2.1
1.4
8.0
8.9
8.5
10.7
8.8
9.3
5.7
5.0
766
1024
172
238
83
116
Max.
–––
–––
–––
15.5
22.2
12.7
16.9
2.35
–––
–––
1.0
150
100
-100
–––
–––
8.6
11.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.2
3.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
Units
Conditions
V
GS
= 0V, I
D
= 250µA
V
V/°C
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 8.0A
V
GS
= 4.5V, I
D
= 6.4A
V
GS
= 10V, I
D
= 11A
V
GS
= 4.5V, I
D
= 8.6A
Q1: V
DS
= V
GS
, I
D
= 25µA
Q2: V
DS
= V
GS
, I
D
= 25µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 6.4A
V
DS
= 15V, I
D
= 8.6A
R
DS(on)
Static Drain-to-Source On-Resistance
mΩ
V
mV/°C
µA
nA
S
e
e
e
e
Q1
V
DS
= 15V
V
GS
= 4.5V, I
D
= 6.4A
nC
Q2
V
DS
= 15V
V
GS
= 4.5V, I
D
= 8.6A
See Fig. 31a &31b
nC
V
DS
= 16V, V
GS
= 0V
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ω
Q1
V
DD
= 15V, V
GS
= 4.5V
I
D
= 6.4A
R
G
= 1.8Ω See Fig.30a & 30b
Q2
V
DD
= 15V, V
GS
= 4.5V
I
D
= 8.6A
RG = 1.8W
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
ns
pF
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
c
d
Q1 Max.
49
6.4
Q2 Max.
70
8.6
Units
mJ
A
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Min.
Typ.
Max. Units
Conditions
Q1
–––
–––
1.9
MOSFET symbol
A
Q2
–––
–––
3.0
showing the
integral reverse
Q1
–––
–––
64
A
p-n junction diode.
Q2
–––
–––
88
T
J
= 25°C, I
S
= 6.4A, V
GS
= 0V
Q1
–––
–––
1.0
V
T
J
= 25°C, I
S
= 8.6A, V
GS
= 0V
Q2
–––
–––
1.0
Q1 T
J
= 25°C, I
F
= 6.4A,
Q1
–––
15
23
ns
V
DD
= 15V, di/dt = 100A/µs
Q2
–––
17
26
Q2 T
J
= 25°C, I
F
= 8.6A,
Q1
–––
7.2
11
nC
Q2
–––
9.3
14
VDD = 15V, di/dt = 100A/µs
Intrinsic turn -on time is negligible (turn -on is dominated by LS+LD)
c
Reverse Recovery Time
Reverse Recovery Charge
Forward Trun-On Time
e
e
e
e
2
www.irf.com
Typical Characteristics
100
IRF8513PbF
100
Q1 - Control FET
TOP
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
Q2 - Synchronous FET
TOP
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
BOTTOM
10
BOTTOM
1
1
0.1
2.5V
Tj
≤
60µs PULSE WIDTH
= 25°C
0.01
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
0.1
2.5V
Tj
≤
60µs PULSE WIDTH
= 25°C
0.01
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100
TOP
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
Fig 2.
Typical Output Characteristics
100
TOP
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
BOTTOM
10
BOTTOM
2.5V
1
2.5V
1
≤
60µs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
0.1
0.1
1
≤
60µs PULSE WIDTH
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
100
100
Fig 4.
Typical Output Characteristics
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
T J = 175°C
10
T J = 175°C
TJ = 25°C
1
T J = 25°C
1
VDS = 15V
≤60µs
PULSE WIDTH
0.1
1
2
3
4
5
6
VDS = 15V
≤60µs
PULSE WIDTH
0.1
1
2
3
4
5
6
VGS, Gate-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
Fig 6.
Typical Transfer Characteristics
www.irf.com
3
IRF8513PbF
Q1 - Control FET
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Typical Characteristics
10000
Q2 - Synchronous FET
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
C, Capacitance (pF)
C, Capacitance (pF)
1000
Ciss
Coss
1000
Ciss
Coss
100
Crss
100
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
10
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
14.0
VGS, Gate-to-Source Voltage (V)
Fig 8.
Typical Capacitance vs. Drain-to-Source Voltage
14.0
ID= 8.6A
VDS= 24V
VDS= 15V
10.0
8.0
6.0
4.0
2.0
0.0
0
2
4
6
VDS= 24V
VDS= 15V
VGS, Gate-to-Source Voltage (V)
12.0
ID= 6.4A
12.0
10.0
8.0
6.0
4.0
2.0
0.0
8
10
12
14
16
0
2
4
6
8
10 12 14 16 18 20
QG, Total Gate Charge (nC)
QG, Total Gate Charge (nC)
Fig 9.
Typical Gate Charge vs. Gate-to-Source Voltage
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Fig 10.
Typical Gate Charge vs. Gate-to-Source
Voltage
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
100µsec
10
1msec
1
10msec
T A = 25°C
Tj = 175°C
Single Pulse
0.1
0
1
10
100
100µsec
10
1msec
10msec
1
T A = 25°C
Tj = 175°C
Single Pulse
0.1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 11.
Maximum Safe Operating Area
Fig 12.
Maximum Safe Operating Area
4
www.irf.com
Typical Characteristics
Q1 - Control FET
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
IRF8513PbF
Q2 - Synchronous FET
2.0
ID = 11A
VGS = 10V
1.5
ID = 8.0A
VGS = 10V
1.5
1.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
Fig 13.
Normalized On-Resistance vs. Temperature
100
Fig 14.
Normalized On-Resistance vs. Temperature
100
ISD, Reverse Drain Current (A)
ISD, Reverse Drain Current (A)
10
T J = 175°C
T J = 175°C
10
T J = 25°C
VGS = 0V
T J = 25°C
VGS = 0V
1.0
0.2
0.8
1.4
2.0
2.6
3.2
3.8
VSD, Source-to-Drain Voltage (V)
1.0
0.1
0.7
1.3
1.9
2.5
3.1
3.7
4.3
VSD, Source-to-Drain Voltage (V)
Fig 15.
Typical Source-Drain Diode Forward Voltage
RDS(on), Drain-to -Source On Resistance (m
Ω)
Fig 16.
Typical Source-Drain Diode Forward Voltage
RDS(on), Drain-to -Source On Resistance (m
Ω)
30
ID = 11A
25
50
45
40
35
30
25
20
15
10
2
4
6
8
10
T J = 25°C
TJ = 125°C
ID = 8.0A
20
T J = 125°C
15
T J = 25°C
10
2
4
6
8
10
VGS, Gate -to -Source Voltage (V)
VGS, Gate -to -Source Voltage (V)
Fig 17.
Typical On-Resistance vs.Gate Voltage
Fig 18.
Typical On-Resistance vs.Gate Voltage
www.irf.com
5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
