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Freescale Semiconductor
Technical Data
Document Number: MRF8P20161HS
Rev. 0, 10/2010
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 1880 to
2025 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
•
Typical Doherty Single--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQA
= 550 mA, V
GSB
= 1.6 Vdc, P
out
= 37 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
Frequency
1880 MHz
1900 MHz
1920 MHz
G
ps
(dB)
16.5
16.5
16.4
η
D
(%)
46.2
46.0
45.8
Output PAR
(dB)
6.9
6.9
7.0
ACPR
(dBc)
--27.9
--29.1
--30.4
MRF8P20161HSR3
1880-
-1920 MHz, 37 W AVG., 28 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFET
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1900 MHz, 142 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Typical P
out
@ 3 dB Compression Point
≃
147 Watts CW
Features
•
Production Tested in a Symmetrical Doherty Configuration
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
Designed for Digital Predistortion Error Correction Systems
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
CW Operation @ T
C
= 25°C
Derate above 25°C
CASE 465H-
-02, STYLE 1
NI-
-780S-
-4
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
(Top View)
Figure 1. Pin Connections
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
Value
--0.5, +65
--6.0, +10
32, +0
-- 65 to +150
150
225
206
1.86
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 74°C, 37 W CW, 28 Vdc, I
DQA
= 550 mA, V
GSB
= 1.6 V, 1900 MHz
Case Temperature 93°C, 160 W CW
(4)
, 28 Vdc, I
DQA
= 550 mA, V
GSB
= 1.6 V, 1900 MHz
Symbol
R
θJC
Value
(2,3)
0.76
0.53
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
©
Freescale Semiconductor, Inc., 2010. All rights reserved.
MRF8P20161HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 116
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DA
= 550 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1.5 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.2
1.9
0.05
1.8
2.7
0.27
2.7
3.4
0.4
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(2,3)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 550 mA, V
GSB
= 1.6 Vdc, P
out
= 37 W Avg.,
f = 1920 MHz, Single--Carrier W--CDMA
, IQ Magnitude Clipping
, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
G
ps
η
D
PAR
ACPR
15.0
42.2
6.5
—
16.4
45.8
7.0
--30.4
18.0
—
—
--27.3
dB
%
dB
dBc
Typical Broadband Performance
(3)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 550 mA, V
GSB
= 1.6 Vdc,
P
out
= 37 W Avg., Single--Carrier W--CDMA
, IQ Magnitude Clipping
, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Frequency
1880 MHz
1900 MHz
1920 MHz
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in a Symmetrical Doherty configuration.
(continued)
G
ps
(dB)
16.5
16.5
16.4
η
D
(%)
46.2
46.0
45.8
Output PAR
(dB)
6.9
6.9
7.0
ACPR
(dBc)
--27.9
--29.1
--30.4
MRF8P20161HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance
(1)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 550 mA, V
GSB
= 1.6 Vdc,
1880--1920 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
P
out
@ 3 dB Compression Point, CW
IMD Symmetry @ 30 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 40 MHz Bandwidth @ P
out
= 37 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
1. Measurement made with device in a Symmetrical Doherty configuration.
P1dB
P3dB
IMD
sym
—
—
—
97
147
55
—
—
—
W
W
MHz
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
65
0.1
0.01
0.009
—
—
—
—
MHz
dB
dB/°C
dB/°C
MRF8P20161HSR3
RF Device Data
Freescale Semiconductor
3
V
GA
C10
C8
C20 C22
V
DA
C18
C16
CUT OUT AREA
C
C14
C15
P
C12
C26
C24
R2 C6
C3
Z1
C1
R1
C2
C5
C13
C17
C4
R3 C7
C11
V
GB
C19
V
DB
MRF8P20160H
Rev. 1
C25
C9
C21 C23
Figure 2. MRF8P20161HSR3 Test Circuit Component Layout
Table 5. MRF8P20161HSR3 Test Circuit Component Designations and Values
Part
C1, C2, C12, C13
C3
C4, C5
C6, C7, C18, C19
C8, C9, C20, C21, C22, C23
C10, C11
C14, C15
C16, C17
C24, C25
C26
R1
R2, R3
Z1
PCB
Description
10 pF Chip Capacitors
0.3 pF Chip Capacitor
1.1 pF Chip Capacitors
12 pF Chip Capacitors
10
μF,
50 V Chip Capacitors
22
μF,
35 V Tantalum Capacitors
2.0 pF Chip Capacitors
2.2 pF Chip Capacitors
220
μF,
50 V Electrolytic Capacitors
0.8 pF Chip Capacitor
50
Ω,
4 W Chip Resistor
8.25
Ω,
1/4 W Chip Resistors
1900 MHz Band 90°, 3 dB Chip Hybrid Coupler
0.020″,
ε
r
= 3.5
Part Number
ATC600F100JT250XT
ATC600F0R3BT250XT
ATC600F1R1BT250XT
ATC600F120JT250XT
GRM55DR61H106KA88L
T491X226K035AT
ATC600F2R0BT250XT
ATC600F2R2BT250XT
227CKS505M
ATC600F0R8BT250XT
CW12010T0050GBK
CRCW12068R25FKEA
GCS351--HYB1900
RO4350B
Manufacturer
ATC
ATC
ATC
ATC
Murata
Kemet
ATC
ATC
Illinois Cap
ATC
ATC
Vishay
Soshin
Rogers
MRF8P20161HSR3
4
RF Device Data
Freescale Semiconductor
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