MMBF170LT1
Power MOSFET
500 mA, 60 V
N−Channel SOT−23
Features
•
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Drain−Source Voltage
Drain−Gate Voltage
Gate−Source Voltage
− Continuous
− Non−repetitive (t
p
≤
50
ms)
Drain Current − Continuous
− Pulsed
Symbol
V
DSS
V
DGS
V
GS
V
GSM
I
D
I
DM
Value
60
60
±
20
±
40
0.5
0.8
Unit
Vdc
Vdc
Vdc
Vpk
Adc
1
Unit
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500 mA, 60 V
R
DS(on)
= 5
W
N−Channel
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1.) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
1. FR−5 = 1.0
0.75
0.062 in.
Symbol
P
D
225
1.8
R
qJA
T
J
, T
stg
556
−55 to
+150
mW
mW/°C
°C/W
°C
1
2
3
Max
2
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM
6Z
W
6Z
W
= Device Code
= Work Week
PIN ASSIGNMENT
3
Drain
Gate 1
2 Source
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2004
1
February, 2004 − Rev. 4
Publication Order Number:
MMBF170LT1/D
MMBF170LT1
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage (V
GS
= 0, I
D
= 100
mA)
Gate−Body Leakage Current, Forward (V
GSF
= 15 Vdc, V
DS
= 0)
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1.0 mA)
Static Drain−Source On−Resistance (V
GS
= 10 Vdc, I
D
= 200 mA)
On−State Drain Current (V
DS
= 25 Vdc, V
GS
= 0)
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 10 Vdc, V
GS
= 0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
(Note 1)
Turn−On Delay Time
Turn−Off Delay Time
(V
DD
= 25 Vdc, I
D
= 500 mA, R
gen
= 50
W)
Figure 1
t
d(on)
t
d(off)
−
−
10
10
ns
C
iss
−
60
pF
V
GS(th)
r
DS(on)
I
D(off)
0.8
−
−
3.0
5.0
0.5
Vdc
W
mA
V
(BR)DSS
I
GSS
60
−
−
10
Vdc
nAdc
Symbol
Min
Max
Unit
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
ORDERING INFORMATION
Device
MMBF170LT1
MMBF170LT1G
MMBF170LT3
MMBF170LT3G
Package
SOT−23 (TO−236)
SOT−23 (TO−236)
(Pb−Free)
SOT−23 (TO−236)
SOT−23 (TO−236)
(Pb−Free)
Shipping
†
10,000 Tape & Reel
3,000 Tape & Reel
10,000 Tape & Reel
3,000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
+25 V
t
on
t
d(on)
125
W
PULSE
GENERATOR
50
W
V
in
40 pF
20 dB 50
W
ATTENUATOR
TO SAMPLING
SCOPE
50
W
INPUT
OUTPUT
INVERTED
V
out
INPUT
50%
50
W
1 MW
V
in
10%
PULSE WIDTH
t
r
90%
10%
90%
50%
t
d(off)
90%
t
off
t
f
V
out
(V
in
AMPLITUDE 10 VOLTS)
Figure 1. Switching Test Circuit
Figure 2. Switching Waveform
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2
MMBF170LT1
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
1.8
I D, DRAIN CURRENT (AMPS)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1.0
2.0 3.0 4.0 5.0
6.0
7.0 8.0
V
DS
, DRAIN SOURCE VOLTAGE (VOLTS)
7V
6V
5V
4V
3V
9.0
10
T
A
= 25°C
I D, DRAIN CURRENT (AMPS)
V
GS
= 10 V
9V
8V
1.0
V
DS
= 10 V
0.8
−55
°C
125°C
25°C
0.6
0.4
0.2
0
1.0
2.0 3.0 4.0
5.0
6.0 7.0 8.0
V
GS
, GATE SOURCE VOLTAGE (VOLTS)
9.0
10
Figure 3. Ohmic Region
Figure 4. Transfer Characteristics
r DS(on) , STATIC DRAIN−SOURCE ON−RESISTANCE
(NORMALIZED)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
−60
−20
+20
+60
T, TEMPERATURE (°C)
+100
+140
V
GS
= 10 V
I
D
= 200 mA
VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
−60
−20
+20
+60
T, TEMPERATURE (°C)
+100
+140
V
DS
= V
GS
I
D
= 1.0 mA
Figure 5. Temperature versus Static
Drain−Source On−Resistance
Figure 6. Temperature versus Gate
Threshold Voltage
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3
MMBF170LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AH
A
L
3
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
DIM
A
B
C
D
G
H
J
K
L
S
V
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
B S
V
G
C
D
H
K
J
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm
inches
SOT−23
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Thermal Clad is a registered trademark of the Bergquist Company.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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For additional information, please contact your
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4
MMBF170LT1/D
微控制器 MCU
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