PRODUCT SPECIFICATIONS
SEMICONDUCTOR TECHNOLOGY, INC.
3131 S. E. JAY STREET, STUART, FL 34997
PH: (561) 283-4500 FAX: (561) 286-8914
Website: http://www.semi-tech-inc.com
CASE OUTLINE:
TO-204AA (TO-3)
TYPE:
MTM4N90
HIGH VOLTAGE POWER MOSFET
N-CHANNEL
ABSOLUTE MAXIMUM RATING:
Drain – Source Voltage
Drain – Gate Voltage
Drain Current – Continuous
Drain Current – Pulsed
Gate – Source Voltage
Power Dissipation
Inductive Current
Operating and Storage Temperature
Lead Temperature From Case
VDSS
VDGR
ID
IDM
VGS
PD
IL
TJ & Tstg
TL
900
900
4.0
18
±20
125
-65 to +150
275
Vdc
Vdc
Adc
Adc
Vdc
Watts
Adc
°C
°C
ELECTRICAL CHARACTERISTICS TA @ 25°C
°
Parameters
Symbol
Test Conditions
Drain Source
BVDSS ID = .25mA
Breakdown Voltage
Gate Threshold Voltage VGS(th) ID = 1.0mA
ID = 1.0mA, TJ = 100°C
Gate – Body Leakage
IGSS
VGS = 20V
Current
Zero Gate Voltage
IDSS
VDS = 900V
Drain Current
VDS = 720V, T J = 125°C
On State Drain Current
ID(on)
Drain Source On
Resistance
Forward
Transconductance
Drain-Source On-
Voltage
Drain Source On-
Voltage
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
rDS(on)
gFS
VDS(on)
VDS(on)
Ciss
Coss
Crss
VDS = 25V, f = 1 MHz
VDS = 10V, ID = 2.0A,
ID =4.0A
ID =2.0A, TC = 100°C
Min
900
2.0
1.5
Typ
Max
Unit
Vdc
Vdc
nA
mA
mA
Adc
Ohms
4.5
4.0
500
0.25
1.0
2.0
16
14
mhos
Vdc
Vdc
Vdc
1500 pF
150
60
pF
pF
Page 1 of 2
TYPE:MTM4N90
Drain Source Diode Characteristics
Forward On Voltage
Reverse Recovery Time
Forward Turn-On Time
Total Gate Charge
Gate – Source Charge
Gate – Drain Charge
VDS=720V, ID=4.0A, VGS =10V
IS =4.0A
Symbol
VSD
trr
ton
Qg
Qgs
Qgd
30
25
Min
Typ
Max
1.5
Units
Vdc
ns
ns
85
nC
nC
nC
1000
200
Switching Characteristics
Turn-On Time
Turn-Off Time
Delay Time (Turn On)
Rise Time
Delay Time (Turn Off)
Fall Time
VDD = 25V, ID = 2.0A
Rgen = 50Ω
Symbol
ton
toff
td(on)
tr
td(off)
tf
Min
Typ
Max
Units
40
40
250
75
ns
ns
ns
ns
Thermal Characteristics
Junction To Case
Junction To Ambient
Symbol
R
θJC
R
θJA
1.0
Units
°C/W
°C/W
Page 2 of 2
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