HY57V281620B(L)T
4 Banks x 2M x 16bits Synchronous DRAM
DESCRIPTION
Preliminary
The Hynix HY57V281620B(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which
require large memory density and high bandwidth. HY57V281620B(L)T is organized as 4banks of 2,097,152x16
HY57V281620B(L)T is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are syn-
chronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input and
output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated
by a single control command (Burst length of 1,2,4,8, or full page), and the burst count sequence(sequential or interleave). A burst of
read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst
read or write command on any cycle. (This pipelined design is not restricted by a `2N` rule.)
FEATURES
•
•
•
Single 3.3±0.3V power supply
All device pins are compatible with LVTTL interface
JEDEC standard 400mil 54pin TSOP-II with 0.8mm
of pin pitch
All inputs and outputs referenced to positive edge of
system clock
Data mask function by UDQM or LDQM
Internal four banks operation
•
•
•
•
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or Full page for Sequential Burst
•
- 1, 2, 4 or 8 for Interleave Burst
Programmable CAS Latency ; 2, 3 Clocks
•
•
ORDERING INFORMATION
Part No.
HY57V281620BT-6
HY57V281620BT-7
HY57V281620BT-K
HY57V281620BT-H
HY57V281620BT-8
HY57V281620BT-P
HY57V281620BT-S
HY57V281620BLT-6
HY57V281620BLT-7
HY57V281620BLT-K
HY57V281620BLT-H
HY57V281620BLT-8
HY57V281620BLT-P
HY57V281620BLT-S
Clock Frequency
166MHz
143MHz
133MHz
133MHz
125MHz
100MHz
100MHz
166MHz
143MHz
133MHz
133MHz
125MHz
100MHz
100MHz
Power
Organization
Interface
Package
Normal
4Banks x 2Mbits
x16
LVTTL
400mil 54pin TSOP II
Low power
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use
of circuits described. No patent licenses are implied.
Rev. 0.1/Nov. 01
2
HY57V281620B(L)T
PIN CONFIGURATION
V
DD
DQ0
V
DDQ
DQ1
DQ2
V
SSQ
DQ3
DQ4
V
DDQ
DQ5
DQ6
V
SSQ
DQ7
V
DD
LDQM
/WE
/CAS
/RAS
/CS
BA0
BA1
A10/AP
A0
A1
A2
A3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
SS
DQ15
V
SSQ
DQ14
DQ13
V
DDQ
DQ12
DQ11
V
SSQ
DQ10
DQ9
V
DDQ
DQ8
V
SS
NC
UDQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
V
SS
54pin TSOP II
400mil x 875mil
0.8mm pin pitch
PIN DESCRIPTION
PIN
CLK
CKE
CS
BA0, BA1
A0 ~ A11
Clock
Clock Enable
Chip Select
Bank Address
Address
Row Address Strobe, Col-
umn Address Strobe, Write
Enable
Data Input/Output Mask
Data Input/Output
Power Supply/Ground
Data Output Power/Ground
No Connection
PIN NAME
DESCRIPTION
The system clock input. All other inputs are registered to the SDRAM on the
rising edge of CLK
Controls internal clock signal and when deactivated, the SDRAM will be one
of the states among power down, suspend or self refresh
Enables or disables all inputs except CLK, CKE, UDQM and LDQM
Selects bank to be activated during RAS activity
Selects bank to be read/written during CAS activity
Row Address : RA0 ~ RA11, Column Address : CA0 ~ CA8
Auto-precharge flag : A10
RAS, CAS and WE define the operation
Refer function truth table for details
Controls output buffers in read mode and masks input data in write mode
Multiplexed data input / output pin
Power supply for internal circuits and input buffers
Power supply for output buffers
No connection
RAS, CAS, WE
UDQM, LDQM
DQ0 ~ DQ15
V
DD
/V
SS
V
DDQ
/V
SSQ
NC
Rev. 0.1/Nov. 01
3
HY57V281620B(L)T
ABSOLUTE MAXIMUM RATINGS
Parameter
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to V
SS
Voltage on V
DD
relative to V
SS
Short Circuit Output Current
Power Dissipation
Soldering Temperature
⋅
Time
T
A
T
STG
V
IN
, V
OUT
V
DD,
V
DDQ
I
OS
P
D
T
SOLDER
Symbol
0 ~ 70
-55 ~ 125
-1.0 ~ 4.6
-1.0 ~ 4.6
50
1
260
⋅
10
Rating
°C
°C
V
V
mA
W
°C ⋅
Sec
Unit
Note :
Operation at above absolute maximum rating can adversely affect device reliability.
DC OPERATING CONDITION
(T
A
=0 to 70°C)
Parameter
Power Supply Voltage
Input High voltage
Input Low voltage
Symbol
V
DD
, V
DDQ
V
IH
V
IL
Min
3.0
2.0
-0.3
Typ
3.3
3.0
0
Max
3.6
V
DDQ
+ 0.3
0.8
Unit
V
V
V
Note
1
1,2
1,3
Note :
1.All voltages are referenced to V
SS
= 0V
2.V
IH
(max) is acceptable 5.6V AC pulse width with <=3ns of duration.
3.V
IL
(min) is acceptable -2.0V AC pulse width with <=3ns of duration.
AC OPERATING TEST CONDITION
(T
A
=0 to 70°C, V
DD
=3.3
±
0.3V, V
SS
=0V)
Parameter
AC Input High / Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise / Fall Time
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
Symbol
V
IH
/ V
IL
Vtrip
tR / tF
Voutref
C
L
Value
2.4/0.4
1.4
1
1.4
50
Unit
V
V
ns
V
pF
1
Note
Note :
1.Output load to measure access times is equivalent to two TTL gates and one capacitor (50pF). For details, refer to AC/DC output
load circuit
Rev. 0.1/Nov. 01
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
