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MMBTA28-TP-HF

产品描述Small Signal Bipolar Transistor, NPN,
产品类别分立半导体    晶体管   
文件大小246KB,共4页
制造商Micro Commercial Components (MCC)
标准
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MMBTA28-TP-HF概述

Small Signal Bipolar Transistor, NPN,

MMBTA28-TP-HF规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Micro Commercial Components (MCC)
包装说明SMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN代码EAR99
最大集电极电流 (IC)0.5 A
集电极-发射极最大电压80 V
配置DARLINGTON
最小直流电流增益 (hFE)10000
JESD-30 代码R-PDSO-G3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
最大功率耗散 (Abs)0.3 W
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)125 MHz

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MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
MMBTA28
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
High Current Gain
Ideal for Medium Power Amplification and Switching
Epitaxial Planar Die Construction
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Marking: 3SS
Halogen
free available upon request by adding suffix "-HF"
NPN Surface Mount
Darlington Transistor
SOT-23
A
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage*
(I
C
=1.0mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=100µAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=100µAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=60Vdc, I
E
=0)
Emitter Cutoff Current
(V
EB
=10Vdc, I
C
=0)
DC Current Gain*
(I
C
=10mAdc, V
CE
=5Vdc)
(I
C
=100mAdc, V
CE
=5Vdc)
10,000
10,000
Min
80.0
80.0
12.0
100
100
Max
Units
Vdc
Vdc
Vdc
nA
nA
G
F
E
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
C
C
B
B
E
H
J
ON CHARACTERISTICS
h
FE
k
DIMENSIONS
INCHES
MIN
MAX
.110
.118
.090
.104
.047
.055
.035
.041
.070
.081
.018
.024
.0005
.0039
.035
.043
.003
.007
.015
.020
MM
MIN
2.80
2.30
1.20
.89
1.78
.45
.013
.90
.085
.37
MAX
3.00
2.50
1.40
1.03
2.05
.60
.100
1.10
.180
.51
NOTE
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=100uAdc)
Base-Emitter Saturation Voltage
(I
C
=100mAdc,V
CE
=5.0v)
1.5
Vdc
V
BE(sat)
2.0
Vdc
DIM
A
B
C
D
E
F
G
H
J
K
SMALL-SIGNAL CHARACTERISTICS
f
T
C
cb
Current Gain-Bandwidth Product
(I
C
=10mAdc, V
CE
=5.0Vdc, f=100MHz)
Collector-Emitter Capacitance
(V
CB
=10Vdec, I
E
=0, f=1.0MHz)
125
8.0
MHz
pF
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,
T
A
= 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
300
417
–55 to +150
Unit
mW
°C/W
°C
R
qJA
T
J
, T
stg
.037
.950
.037
.950
inches
mm
www.mccsemi.com
Revision:
B
1 of 4
2013/01/01

MMBTA28-TP-HF相似产品对比

MMBTA28-TP-HF MMBTA28-TP
描述 Small Signal Bipolar Transistor, NPN, Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3
是否Rohs认证 符合 符合
厂商名称 Micro Commercial Components (MCC) Micro Commercial Components (MCC)
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant compliant
ECCN代码 EAR99 EAR99
集电极-发射极最大电压 80 V 80 V
配置 DARLINGTON DARLINGTON
最小直流电流增益 (hFE) 10000 10000
JESD-30 代码 R-PDSO-G3 R-PDSO-G3
元件数量 1 1
端子数量 3 3
最高工作温度 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
极性/信道类型 NPN NPN
最大功率耗散 (Abs) 0.3 W 0.3 W
表面贴装 YES YES
端子形式 GULL WING GULL WING
端子位置 DUAL DUAL
晶体管应用 SWITCHING AMPLIFIER
晶体管元件材料 SILICON SILICON
标称过渡频率 (fT) 125 MHz 125 MHz

 
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