MMA-022030B
2 - 20 GHz GaAs MMIC
+29dBm Power Amplifier
Data Sheet
March 2007
Features:
•
•
•
•
•
•
•
•
•
Usable Frequency Range: 1 - 22 GHz
P
-2dB
: +29 dBm
Gain:
6.5 dB
Fully Matched Input/Output
On-Chip DC Bias RF Choke
On-Chip Input/Output DC Blocking
Die Size: 3.00 x 1.24 x 0.1 mm
Robust 0.25um PHEMT Technology
MTTF 1.0E6 hours @ +85
°C
Description:
The MMA-022030B is a 2 - 20GHz broadband power amplifier with nearly 1W output power (P-2dB). It is realized in
advanced AlGaAs/InGaAs pHEMT technology. The usable frequency range extends to 1 – 22 GHz. With on-chip
input/output blocking capacitors and DC supply RF choke circuitry, it only requires simple DC bias circuits and RF
connections for broad range applications.
Electrical Specifications:
Parameter
Frequency Range, min.
Small Signal Gain
Gain Flatness
Input Return Loss
Output Return Loss
Output P-
1dB
2-6 GHz
8-16 GHz
18-20 GHz
Output P-
2dB
2-6 GHz
8-16 GHz
18-20 GHz
Noise Figure
DC Drain Voltage, VDD
DC Gate Voltage, VGG (~ 1mA)
DC Current, IDD
Thermal Resistance
(At VDD = +9.0V, IDD = 490 mA, VGG = - 0.42V, T
A
=25
°C
)
Units
GHz
dB
+/-dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dB
V
V
mA
°C/W
Min.
2
5.0
Typ.
6.5
1.3
-9
-8.0
+28.5
+28.0
+26.0
+30.0
+29.5
+28.0
6.5
+9.0
-0.42
490
16.2
Max.
20
+28.0
+27.0
+25.5
+29.2
+28.5
+26.5
-2.0
+9.5
0.0
MicroWave Technology, Inc., an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2007
Please visit MwT website
www.mwtinc.com
for information on other MwT MMIC products.
Updated 5/29/2007, Page 1 of 4
MMA-022030B
2 - 20 GHz GaAs MMIC
+29dBm Power Amplifier
Data Sheet
March 2007
MEASURED DATA
(1)
Output Power
VDD = +9.0V, IDD = 490mA, VG = -0.42V
Output Pow er @ +25C
Noise Figure
VDD = +9.0V, IDD = 490mA, VG = -0.42V
NF @ +25C
12
10
8
6
4
2
0
0
5
10
Frequency, GHz
15
20
31
29
27
25
23
21
0
5
10
Frequency, GHz
15
20
P1dB
P2dB
Small Signal Gain and VSWR at +25
o
C
M M A-2 2 0 3 0 B
V D D = + 9 . 0 V , ID D = 4 9 0 m A , V G = ~ - 0 . 4 2 V
14
12
10
8
6
4
2
0
0
5
10
15
F req , G H z
Input/Output Return Loss, dB
0
-5
-1 0
-1 5
-2 0
-2 5
0
5
10
15
F req , G H z
20
25
30
d B (S (1 ,1 ))
d B (S (2 ,2 ))
20
25
30
MicroWave Technology, Inc., an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2007
Please visit MwT website
www.mwtinc.com
for information on other MwT MMIC products.
Updated 5/29/2007, Page 2 of 4
SSG, dB
Noise Figure, dB
33
MMA-022030B
2 - 20 GHz GaAs MMIC
+29dBm Power Amplifier
Data Sheet
March 2007
Small Signal Gain over Temperature Range
MMA-22030B
VDD = +9.0V, IDD = 490mA, VG = ~ - 0.42V
SSG, dB over Temp
14
12
10
8
6
4
2
0
0
5
10
15
Freq, GHz
20
25
30
_____ @ +25 ºC, _____ @ -40 ºC, _____ @ +85 ºC
(1) Test module per the assembly diagram of this data sheet. Two SMA Connectors and microstrip line losses,
approximately 0.5dB at 10GHz, and 0.9dB at 20GHz, are de-embedded. Data include RF bond-wires.
Absolute Maximum Ratings
(*):
Parameter
Drain Voltage, VDD
Gate Voltage, VGG
Current, IDD
Channel Temperature
Operating Temperature
Storage Temperature
Rating
+ 9.5 V
-2V
600 mA
+175 ºC
-55 ºC to +85 ºC
-65 ºC to +175 ºC
RF Input Power
+ 27 dBm
(*) Operation exceeding the limits can cause permanent damage.
MicroWave Technology, Inc., an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2007
Please visit MwT website
www.mwtinc.com
for information on other MwT MMIC products.
Updated 5/29/2007, Page 3 of 4
MMA-022030B
2 - 20 GHz GaAs MMIC
+29dBm Power Amplifier
Data Sheet
March 2007
MMA-022030B Bonding/Assembly Diagram
Bonding/Assembly Recommendations:
1. Use epoxy with good thermal and electrical conductivity to attach the device. Curing temperature should
maintain at approximately +150
°C.
2. Use 1.0 mil diameter Au wire, 2 parallel each pad for RF input and output pads. Keep the wire length less than 10
mils to minimize its impact to high frequency performance.
MicroWave Technology, Inc., an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208
WEB
www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved © 2007
Please visit MwT website
www.mwtinc.com
for information on other MwT MMIC products.
Updated 5/29/2007, Page 4 of 4
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
