SM6K2
Transistors
4V Drive Nch+Nch MOS FET
SM6K2
Structure
Silicon N-channel
MOSFET transistor
External dimensions
(Unit : mm)
SMT6
2.9
1.9
0.95
0.95
1.1
0.8
(4)
(5)
(6)
Features
1) Two RHU002N06 chips in a SMT package.
2) Mounting possible with SMT3 automatic mounting machines.
3) Transistor elements are independent, eliminating mutual
interference.
4) Mounting cost and area can be cut in half.
1.6
(3)
(2)
(1)
2.8
1pin mark
0.3
0.15
Each lead has same dimensions
Abbreviated symbol : K2
Packaging specifications
Package
Code
Type
SM6K2
Basic ordering unit (pieces)
Taping
T110
3000
Equivalent circuit
(4)
(5)
∗1
(6)
∗2
(1) TR1 Drain
(2) TR2 Gate
(3) TR2 Source
(4) TR2 Drain
(5) TR1 Gate
(6) TR1 Source
∗2
∗1
(3)
(2)
(1)
∗1
Gate Protection Diode
∗2
Body Diode
∗
A protection diode has been built in between the gate
Absolute maximum ratings
(Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Drain reverse current
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
DP
I
DR
I
DRP
P
D
Tch
Tstg
∗1
∗2
∗1
and the source to protect against static electricity
when the product is in use.
Use the protection circuit when fixed voltages are exceeded.
Limits
60
±20
200
800
200
800
300
200
150
−55
to
+
150
Unit
V
V
mA
mA
mA
mA
mW / TOTAL
mW / ELEMENT
°C
°C
∗1
Pw≤10µs, Duty cycle≤1%
∗2
With each pin mounted on the recommended lands.
Thermal resistance
Parameter
Channel to ambient
∗
With each pin mounted on the recommended lands.
Symbol
Rth(ch-a)
∗
Limits
416.7
625
Unit
°C
/ W / TOTAL
°C
/ W / ELEMENT
Rev.B
0.3Min.
1/4
SM6K2
Transistors
Electrical characteristics
(Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Symbol
I
GSS
V
(BR) DSS
I
DSS
V
GS (th)
∗
∗
Min.
−
60
−
1
−
−
0.1
−
−
−
Typ.
−
−
−
−
1.7
2.8
−
15
8
4
6
5
12
95
2.2
0.6
0.3
Max.
±10
−
1
2.5
2.4
4.0
−
−
−
−
−
−
−
−
4.4
−
−
Unit
µA
V
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Test Conditions
V
GS
=±20V,
V
DS
=0V
I
D
=1mA,
V
GS
=0V
V
DS
=60V,
V
GS
=0V
V
DS
=10V,
I
D
=1mA
I
D
=200mA,
V
GS
=10V
I
D
=200mA,
V
GS
=4V
V
DS
=10V,
I
D
=200mA
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=100mA,
V
DD
30V
V
GS
=10V
R
L
=300Ω
R
G
=10Ω
V
DD
30V
V
GS
=10V
I
D
=200mA
Drain-source on-state resistance R
DS (on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗
Pulsed
l Y
fs
l
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
−
−
−
−
−
−
−
Body diode characteristics
(Source-drain) (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Forward voltage
Symbol
V
SD
Min.
−
Typ.
−
Max.
1.2
Unit
V
Conditions
I
S
=200mA, V
GS
=0V
Rev.B
2/4
SM6K2
Transistors
Electrical characteristic curves
GATE THRESHOLD VOLTAGE : V
GS (th)
(V)
0.8
10V
0.7
8V
Ta=25°C
Pulsed
1
V
DS
=
10V
Pulsed
2.5
V
DS
=
10V
I
D
=1mA
Pulsed
0.6
0.5
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
6V
2.0
0.1
Ta=−25°C
25°C
75°C
125°C
0.01
4V
0.4
0.3
0.2
0.1
0.0
0.0 0.5
3.5V
V
GS
=3V
1.5
1.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5 4.0
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
GATE-SOURCE VOLTAGE : V
GS
(V)
0.0
−50 −25
0
25
50
75
100 125 150
DRAIN-SOURCE VOLTAGE : V
DS
(V)
CHANNEL TEMPERATURE : Tch
(°C)
Fig.1 Typical output characteristics
Fig.2 Typical transfer characteristics
Fig.3 Gate threshold voltage
vs. channel temperature
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(Ω)
V
GS
=
10V
Pulsed
10
Ta=125°C
75°C
25°C
−25°C
Ta=125°C
75°C
25°C
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(Ω)
V
GS
=
4V
Pulsed
7
6
5
4
I
D
=200mA
Ta=25°C
Pulsed
3
2
100mA
1
0
1.0
0.01
0.1
DRAIN CURRENT : I
D
(A)
1.0
1.0
0.01
0.1
DRAIN CURRENT : I
D
(A)
1.0
0
5
10
15
20
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.4 Static drain-source on-State
resistance vs. drain current (
Ι
)
Fig.5 Static drain-source on-state
resistance vs. drain current (
ΙΙ
)
Fig.6 Static drain-source on-state
resistance vs. gate-source voltage
3.0
REVERSE DRAIN CURRENT : I
DR
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(Ω)
REVERSE DRAIN CURRENT : I
DR
(A)
V
GS
=10V
Pulsed
1
V
GS
=
0V
Pulsed
10
Ta=25°C
Pulsed
V
GS
=10V
2.5
I
D
=200mA
1
0.1
Ta=125°C
75°C
25°C
−25°C
0.01
2.0
0.1
0V
1.5
100mA
0.01
1.0
−50 −25
0
25
50
75
100 125 150
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
CHANNEL TEMPERATURE : Tch (°C)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
Fig.7 Static drain-source on-state
resistance vs. channel temperature
Fig.8 Reverse drain current vs.
source-drain voltage (
Ι
)
Fig.9 Reverse drain current vs.
source-drain voltage (
ΙΙ
)
Rev.B
3/4
SM6K2
Transistors
FORWARD TRANSFER ADMITTANCE : I Yfs I
(S)
1
V
GS
=10V
Pulsed
Ta=−25°C
25°C
75°C
125°C
0.01
100
Ta=25°C
f=1MHz
V
GS
=0V
SWITCHING TIME : t
(ns)
1000
Ta=25°C
V
DD
=30V
V
GS
=10V
R
G
=10Ω
Pulsed
t
f
100
0.1
CAPACITANCE : C
(pF)
C
iss
10
t
d(off)
10
C
oss
C
rss
t
d(on)
t
r
0.001
0.001
0.01
0.1
1
1
0.01
0.1
1
10
100
1
1
10
100
1000
DRAIN CURRENT : I
D
(A)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN CURRENT : I
D
(mA)
Fig.10 Forward transfer admittance
vs. drain current
Fig.11 Typical capacitance
vs. drain-source voltage
Fig.12 Switching characteristics
Switching characteristics measurement circuit
Pulse width
50%
10%
10%
90%
50%
V
GS
I
D
D.U.T.
R
L
V
DS
V
GS
V
DS
R
G
10%
90%
90%
t
d (off)
t
f
t
off
V
DD
t
d (on)
t
on
t
r
Fig.13 Switching time test circuit
Fig.14 Switching time waveforms
Rev.B
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
TI技术论坛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
